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BSC010N04LSCATMA1

Description
MOSFET DIFFERENTIATED MOSFETS
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size1MB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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MOSFET DIFFERENTIATED MOSFETS

BSC010N04LSCATMA1 Parametric

Parameter NameAttribute value
MakerInfineon
Product CategoryMOSFET
technologySi
Installation styleSMD/SMT
Package/boxPG-TDSON-8
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage40 V
Id-continuous drain current100 A
Rds On - drain-source on-resistance1.05 mOhms
Vgs th-gate-source threshold voltage1.2 V
Vgs - gate-source voltage20 V
Qg-gate charge133 nC
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
Pd-power dissipation139 W
ConfigurationSingle
channel modeEnhancement
EncapsulationCut Tape
EncapsulationReel
Transistor type1 N-Channel
Forward transconductance - minimum270 S
Fall time9 ns
Rise Time12 ns
Factory packaging quantity5000
Typical shutdown delay time46 ns
Typical switch-on delay time10 ns
BSC010N04LSC(UL2595)
MOSFET
OptiMOS
TM
5Power-Transistor,40V
Features
•UL-2595standard
1)
compliantwithincreasedcreepagedistance
•Draintosourcedistanceincreasedtomin.1.5mm
•Verylowon-resistanceR
DS(on)
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC
2)
fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
S1
S2
S3
G4
8D
7D
6D
5D
SuperSO8
Table1KeyPerformanceParameters
Parameter
V
DS
R
DS(on),max
I
D
Q
oss
Q
G
(0V..10V)
Value
40
1.05
100
84
95
Unit
V
mΩ
A
nC
nC
Type/OrderingCode
Package
Marking
10N04LSC
RelatedLinks
-
BSC010N04LSC (UL2595) PG-TDSON-8
1)
UL-2595 standard: General Requirements for Battery-Powered Appliances:
https://standardscatalog.ul.com/standards/en/standard_2595. For applications not requiring UL-2595 please refer to
BSC010N04LS.
2)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.0,2018-08-22
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