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1N4942

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AP
CategoryDiscrete semiconductor    diode   
File Size52KB,2 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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1N4942 Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AP

1N4942 Parametric

Parameter NameAttribute value
MakerLRC
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current25 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-50 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.15 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
LESHAN RADIO COMPANY, LTD.
1N4942 – 1N4948
FAST GPP DIODES
Maximum Average
TYPE
Maximum
Peak Reverse
Voltage
PRV
V
PK
Maximum
Maximum
Reverse
Current @ PRV
@ T
A
=25ºC
I
R
Maximum
Forward
Voltage
@ T
A
=25ºC
I
FM
A
PK
V
FM
V
PK
Maximum
Reverse
Recovery Time
Trr
ns
Package
Dimensions
Rectified Current
Forward Peak
@ Half-Wave
Surge Current @
Resistive Load 60Hz 8.3ms Superimposed
I
O
@ T
L
A
AV
ºC
I
FM
(Surge)
A
PK
µAdc
1N4942
1N4944
1N4946
1N4947
1N4948
200
400
600
800
1000
1.0
75
25
5.0
1.0
1.3
150
150
250
250
500
DO – 41
Trr
I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A
Trr Test Conditions: I
F
= 0.5A, I
R
= 1.0A, I
RR
= 0.25A
1.0(25.4)
MIN
.205(5.2)
.166(4.2)
1.0(25.4)
MIN
.034(0.9)
.028(0.7)
DIA
.107(2.7) DIA
.080(2.0)
DO – 41
37A–1/2

1N4942 Related Products

1N4942 1N4946 1N4947 1N4948
Description 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AP 1 A, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AP 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
package instruction O-PALF-W2 ROHS COMPLIANT, PLASTIC PACKAGE-2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V 1.3 V
JEDEC-95 code DO-41 DO-41 DO-41 DO-41
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2 O-PALF-W2
Maximum non-repetitive peak forward current 25 A 25 A 25 A 25 A
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -50 °C -50 °C -50 °C -50 °C
Maximum output current 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 200 V 600 V 800 V 1000 V
Maximum reverse recovery time 0.15 µs 0.25 µs 0.25 µs 0.5 µs
surface mount NO NO NO NO
Terminal form WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL
Base Number Matches 1 1 1 1
Maker LRC - LRC LRC
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