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1N4947

Description
1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AP
Categorysemiconductor    Discrete semiconductor   
File Size78KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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1N4947 Overview

1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AP

MCC
Features
1N4942
  omponents
21201 Itasca Street Chatsworth

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$ %    !"#
THRU
1N4948
1 Amp Fast Recovery
Rectifier
200 to 1000 Volts
DO-41
Low Leakage Current
Metalurgically Bonded Construction
Low Cost
Fast Switching For High Efficiency
Maximum Ratings
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Maximum Thermal Resistance; 50
°C/W
Junction To Ambient
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
200V
400V
600V
800V
1000V
D
1N4942
1N4944
1N4946
1N4947
1N4948
---
---
---
---
---
140V
280V
420V
560V
700V
A
Cathode
Mark
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
1N4942-4944
1N4946-4947
1N4948
Typical Junction
Capacitance
I
F(AV)
I
FSM
1.0A
25A
T
A
=55°C
8.3ms, half sine
D
C
V
F
1.3V
I
FM
= 1.0A;
T
A
= 25°C*
T
J
= 25°C
T
J
= 175°C
DIM
A
B
C
D
INCHES
MIN
.166
.080
.028
1.000
I
R
5.0µA
500µA
DIMENSIONS
MM
MIN
4.10
2.00
.70
25.40
T
rr
C
J
150ns
250ns
500ns
15pF
I
F
=0.5A,
I
R
=1.0A,
I
rr
=0.25A
Measured at
1.0MHz,
V
R
=4.0V
MAX
.205
.107
.034
---
MAX
5.20
2.70
.90
---
NOTE
*Pulse test: Pulse width 300
µsec,
Duty cycle 2%
www.mccsemi.com

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Description 1 A, 800 V, SILICON, SIGNAL DIODE, DO-204AP 1 A, 200 V, SILICON, SIGNAL DIODE, DO-204AP 1 A, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
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