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BT138-800E,127

Description
Bidirectional thyristor RAIL TRIAC
CategoryAnalog mixed-signal IC    Trigger device   
File Size375KB,14 Pages
ManufacturerWeEn Semiconductors
Download Datasheet Parametric View All

BT138-800E,127 Overview

Bidirectional thyristor RAIL TRIAC

BT138-800E,127 Parametric

Parameter NameAttribute value
MakerWeEn Semiconductors
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time6 weeks
Other featuresSENSITIVE GATE
Shell connectionMAIN TERMINAL 2
ConfigurationSINGLE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum rms on-state current12 A
GuidelineIEC-60134
Off-state repetitive peak voltage800 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Trigger device type4 QUADRANT LOGIC LEVEL TRIAC
BT138-800E
4Q Triac
Rev.01 - 19 March 2018
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-220AB) plastic package
intended for use in general purpose bidirectional switching and phase control applications.
This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic
integrated circuits and other low power gate trigger circuits.
2. Features and benefits
High blocking voltage capability
Sensitive gate
Planar passivated for voltage ruggedness and reliability
Direct triggering from low power drivers and logic ICs
Triggering in all four quadrants
3. Applications
General purpose motor control
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
T
j
Symbol
I
GT
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
junction temperature
Parameter
gate trigger current
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
Dynamic characteristics
dV
D
/dt
rate of rise of off-state
voltage
V
DM
= 536 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
-
150
-
V/μs
Min
-
-
-
-
full sine wave; T
mb
≤ 99 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
Conditions
Values
800
12
95
125
Typ
2.5
4
5
11
Max
10
10
10
25
Unit
V
A
A
°C
Unit
mA
mA
mA
mA
Absolute maximum rating
Static characteristics
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