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GS81302D20E-500

Description
Static random access memory 1.8 or 1.5V 8M x 18 144M
Categorystorage    storage   
File Size1MB,32 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
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GS81302D20E-500 Overview

Static random access memory 1.8 or 1.5V 8M x 18 144M

GS81302D20E-500 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerGSI Technology
Parts packaging codeBGA
package instructionLBGA,
Contacts165
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Factory Lead Time10 weeks
Maximum access time0.37 ns
Other featuresPIPELINED ARCHITECTURE
JESD-30 codeR-PBGA-B165
length17 mm
memory density150994944 bit
Memory IC TypeDDR SRAM
memory width18
Number of functions1
Number of terminals165
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
organize8MX18
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum seat height1.5 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width15 mm
GS81302D06/11/20/38E-500/450/400/350
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• 2.5 Clock Latency
• Simultaneous Read and Write SigmaQuad™ Interface
• JEDEC-standard pinout and package
• Dual Double Data Rate interface
• Byte Write controls sampled at data-in time
• Burst of 4 Read and Write
• On-Die Termination (ODT) on Data (D), Byte Write (BW),
and Clock (K, K) intputs
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• Data Valid Pin (QVLD) Support
• IEEE 1149.1 JTAG-compliant Boundary Scan
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
144Mb SigmaQuad-II+
Burst of 4 SRAM
500 MHz–350 MHz
1.8 V V
DD
1.8 V or 1.5 V I/O
m
en
The GS81302D06/11/20/38E are built in compliance with the
SigmaQuad-II+ SRAM pinout standard for Separate I/O
synchronous SRAMs. They are 150,994,944-bit (144Mb)
SRAMs. The GS81302D06/11/20/38E SigmaQuad SRAMs
m
-500
de
Parameter Synopsis
-450
2.2 ns
0.45 ns
-400
2.5 ns
0.45 ns
-350
2.86 ns
0.45 ns
tKHKH
2.0 ns
0.45 ns
N
ot
Rev: 1.05c 8/2017
Re
co
tKHQV
d
SigmaQuad™ Family Overview
Each internal read and write operation in a SigmaQuad-II+ B4
RAM is four times wider than the device I/O bus. An input
data bus de-multiplexer is used to accumulate incoming data
before it is simultaneously written to the memory array. An
output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore the address
field of a SigmaQuad-II+ B4 RAM is always two address pins
less than the advertised index depth (e.g., the 16M x 8 has a
4M addressable index).
1/31
fo
rN
ew
The GS81302D06/11/20/38E SigmaQuad-II+ SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
inputs, not differential inputs to a single differential clock input
buffer.
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
D
es
Clocking and Addressing Schemes
ig
© 2011, GSI Technology
n
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.

GS81302D20E-500 Related Products

GS81302D20E-500 GS81302D11GE-500 GS81302D20GE-400I
Description Static random access memory 1.8 or 1.5V 8M x 18 144M Static random access memory 1.8 or 1.5V 16M x 9 144M Static random access memory 1.8 or 1.5V 8M x 18 144M
Is it Rohs certified? incompatible conform to conform to
Maker GSI Technology GSI Technology GSI Technology
Parts packaging code BGA BGA BGA
package instruction LBGA, LBGA, LBGA,
Contacts 165 165 165
Reach Compliance Code compliant compliant compliant
ECCN code 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B
Factory Lead Time 10 weeks 12 weeks 12 weeks
Maximum access time 0.37 ns 0.37 ns 0.45 ns
Other features PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE PIPELINED ARCHITECTURE
JESD-30 code R-PBGA-B165 R-PBGA-B165 R-PBGA-B165
length 17 mm 17 mm 17 mm
memory density 150994944 bit 150994944 bit 150994944 bit
Memory IC Type DDR SRAM DDR SRAM DDR SRAM
memory width 18 9 18
Number of functions 1 1 1
Number of terminals 165 165 165
word count 8388608 words 16777216 words 8388608 words
character code 8000000 16000000 8000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
organize 8MX18 16MX9 8MX18
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LBGA LBGA LBGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified
Maximum seat height 1.5 mm 1.5 mm 1.5 mm
Maximum supply voltage (Vsup) 1.9 V 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Terminal form BALL BALL BALL
Terminal pitch 1 mm 1 mm 1 mm
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 15 mm 15 mm 15 mm
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