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25LC080C-I/P

Description
Electrically Erasable Programmable Read Only Memory 8K 1K X 8 16B PAGE 2.5V SER EE IND
Categorystorage    storage   
File Size231KB,25 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
Download Datasheet Download user manual Parametric View All

25LC080C-I/P Overview

Electrically Erasable Programmable Read Only Memory 8K 1K X 8 16B PAGE 2.5V SER EE IND

25LC080C-I/P Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeDIP
package instruction0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-8
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time15 weeks
Maximum clock frequency (fCLK)5 MHz
Data retention time - minimum200
Durability1000000 Write/Erase Cycles
JESD-30 codeR-PDIP-T8
JESD-609 codee3
length9.271 mm
memory density8192 bit
Memory IC TypeEEPROM
memory width8
Number of functions1
Number of terminals8
word count1024 words
character code1000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize1KX8
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP8,.3
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)NOT APPLICABLE
power supply3/5 V
Certification statusNot Qualified
Maximum seat height5.334 mm
Serial bus typeSPI
Maximum standby current0.000001 A
Maximum slew rate0.005 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT APPLICABLE
width7.62 mm
Maximum write cycle time (tWC)5 ms
write protectHARDWARE/SOFTWARE
Base Number Matches1
25LC080C 25LC320A
25LC080D 25LC640A
25LC160C 25LC128
25LC160D 25LC256
8K-256K SPI Serial EEPROM High Temp Family Data Sheet
Features:
• Max. Clock 5 MHz
• Low-power CMOS Technology:
- Max. Write Current: 5 mA at 5.5V, 5 MHz
- Read Current: 5 mA at 5.5V, 5 MHz
- Standby Current: 10
μA
at 5.5V
• 1024 x 8 through 32768 x 8-bit Organization
• Byte and Page-level Write Operations
• Self-timed Erase and Write Cycles (6 ms max.)
• Block Write Protection:
- Protect none, 1/4, 1/2 or all of array
• Built-in Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
• Sequential Read
• High Reliability:
- Endurance: >100K erase/write cycles
- Data retention: > 200 years
- ESD protection: > 4000V
• Temperature Range Supported:
- Extended (H):
-40°C to +150°C
• Package is Pb-free and Halogen free
Description:
Microchip Technology Inc. 25LCXXX* devices are Mid-
density 8 through 256 Kbit Serial Electrically Erasable
PROMs (EEPROM). The devices are organized in
blocks of x8-bit memory and support the Serial Periph-
eral Interface (SPI) compatible serial bus architecture.
Byte-level and page-level functions are supported.
The bus signals required are a clock input (SCK) plus
separate data in (SI) and data out (SO) lines. Access to
the device is controlled through a Chip Select (CS)
input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
Chip Select, allowing the host to service higher priority
interrupts.
The 25LCXXX is available in a standard 8-lead SOIC
package. The package is Pb-free.
Package Types (not to scale)
SOIC
(SN)
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
Pin Function Table
Name
CS
SO
WP
V
SS
SI
SCK
HOLD
V
CC
Function
Chip Select Input
Serial Data Output
Write-Protect
Ground
Serial Data Input
Serial Clock Input
Hold Input
Supply Voltage
*25LCXXX is used in this document as a generic part number for the 25 series devices.
©
2009 Microchip Technology Inc.
Preliminary
DS22131B-page 1

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