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BT139-600-0Q

Description
Triac BT139-600-0/SIL3P/STANDARD MAR
Categorysemiconductor    Discrete semiconductor    thyristor    The bidirectional thyristor   
File Size263KB,14 Pages
ManufacturerWeEn Semiconductors
Environmental Compliance
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BT139-600-0Q Overview

Triac BT139-600-0/SIL3P/STANDARD MAR

BT139-600-0Q Parametric

Parameter NameAttribute value
MakerWeEn Semiconductors
Product CategoryTriac
On state RMS current - It RMS16 A
No repetitive on-state current155 A
Rated repetitive off-state voltage VDRM600 V
Off-state leakage current (at VDRM IDRM)-
On state voltage1.2 V
Maximum holding current Ih45 mA
Gate trigger voltage-Vgt0.7 V
Gate trigger current-Igt22 mA
Minimum operating temperature- 40 C
Maximum operating temperature+ 125 C
Installation styleThrough Hole
Package/boxTO-220AB-3
Factory packaging quantity1000
unit weight1.800 g
BT139-600
4Q Triac
26 September 2018
Product data sheet
1. General description
Planar passivated four quadrant triac in a SOT78 (TO-220AB) plastic package intended for use in
applications requiring high bidirectional transient and blocking voltage capability and high thermal
cycling performance.
2. Features and benefits
High blocking voltage capability
Planar passivated for voltage ruggedness and reliability
Less sensitive gate for high noise immunity
Triggering in all four quadrants
3. Applications
General purpose motor controls
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 99 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G+;
T
j
= 25 °C;
Fig. 7
I
H
holding current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
-
-
-
-
-
Typ
-
-
-
-
-
5
8
10
22
6
Max
600
16
155
170
125
35
35
35
70
45
Unit
V
A
A
A
°C
mA
mA
mA
mA
mA
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
I
GT
junction temperature
gate trigger current
Static characteristics
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