GS8321Z18/32/36AD-xxxV
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• User-configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization
• Fully pin-compatible with both pipelined and flow through
NtRAM™, NoBL™ and ZBT™ SRAMs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 1.8 V or 2.5 V core power supply
• 1.8 V or 2.5 V I/O supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2Mb, 4Mb, 8Mb, and 18Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard 165-bump BGA package
• RoHS-compliant 165-bump BGA package available
36Mb Pipelined and Flow Through
Synchronous NBT SRAM
333 MHz–150 MHz
1.8 V or 2.5 V V
DD
1.8 V or 2.5 V I/O
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable, ZZ and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8321Z18/32/36AD-xxxV may be configured by the
user to operate in Pipeline or Flow Through mode. Operating
as a pipelined synchronous device, in addition to the rising-
edge-triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8321Z18/32/36AD-xxxV is implemented with GSI's
high performance CMOS technology and is available in
JEDEC-standard 165-bump FP-BGA package.
Functional Description
The GS8321Z18/32/36AD-xxxV is a 36Mbit Synchronous
Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL
or other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
-333
3.0
3.0
365
425
5.0
5.0
270
315
-250
3.0
4.0
290
345
5.5
5.5
245
280
-200
3.0
5.0
250
290
6.5
6.5
210
250
-150
3.8
6.7
215
240
7.5
7.5
200
230
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
Rev: 1.03 8/2013
1/31
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321Z18/32/36AD-xxxV
GS8321Z18/32/36AD-xxxV 165-Bump BGA Pin Description
Symbol
A
0
, A
1
An
DQ
A
DQ
B
DQ
C
DQ
D
B
A
, B
B
, B
C
, B
D
CK
CKE
W
E
1
E
3
E
2
FT
G
ADV
ZZ
LBO
TMS
TDI
TDO
TCK
MCH
V
DD
V
SS
V
DDQ
NC
Type
I
I
I/O
I
I
I
I
I
I
I
I
I
I
I
I
I
I
O
I
—
I
I
I
—
Description
Address field LSBs and Address Counter Preset Inputs
Address Inputs
Data Input and Output pins
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
D
I/Os; active low
Clock Input Signal; active high
Clock Enable; active low
Write Enable; active low
Chip Enable; active low
Chip Enable; active low
Chip Enable; active high
Flow Through / Pipeline Mode Control
Output Enable; active low
Burst address counter advance enable; active high
Sleep mode control; active high
Linear Burst Order mode; active low
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Must Connect High
Core power supply
I/O and Core Ground
Output driver power supply
No Connect
Rev: 1.03 8/2013
5/31
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Embedded System
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