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SBG3030CT-T-F

Description
15 A, 30 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size55KB,2 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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SBG3030CT-T-F Overview

15 A, 30 V, SILICON, RECTIFIER DIODE

SBG3030CT-T-F Parametric

Parameter NameAttribute value
Number of terminals2
Number of components2
Processing package descriptionROHS COMPLIANT, PLASTIC, D2PAK-3
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE TIN
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureCOMMON CATHODE, 2 ELEMENTS
Shell connectionCATHODE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationEFFICIENCY
Phase1
Maximum repetitive peak reverse voltage30 V
Maximum average forward current15 A
Maximum non-repetitive peak forward current250 A
SBG3030CT - SBG3060CT
30A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
Features
·
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
Low Power Loss, High Efficiency
High Surge Capability
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 250A Peak
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Applications
Lead Free Finish/RoHS Compliant Version (Note 3)
E
A
4
D
2
PAK
G
H
J
Dim
A
B
C
D
E
G
H
Min
9.65
14.60
0.51
2.29
4.37
1.14
1.14
8.25
0.30
2.03
2.29
Max
10.69
15.88
1.14
2.79
4.83
1.40
1.40
9.25
0.64
2.92
2.79
Mechanical Data
·
·
·
·
·
·
·
·
·
Case: D
2
PAK
Case Material
:
Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish - Bright Tin. Solderable per
MIL-STD-202, Method 208
Ordering Information, Page 2
Polarity: See Diagram
Marking: Type Number
Mounting Position: Any
Weight: 1.7 grams (approximate)
B
1
2
3
M
D
C
PIN 1
PIN 3
K
L
PIN 2 & 4
J
K
L
M
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
C
= 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage, per Element
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Case (Note 1)
Operating and Storage Temperature Range
Notes:
@ T
A
= 25°C unless otherwise specified
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
qJC
T
j,
T
STG
SBG
3030CT
30
21
SBG
3040CT
40
28
SBG
3045CT
45
32
30
250
SBG
3050CT
50
35
SBG
3060CT
60
42
Unit
V
V
A
A
@ I
F
= 15A, T
C
= 25°C
@ T
C
= 25°C
@ T
C
= 100°C
0.55
1.0
75
420
1.5
-65 to +150
0.70
V
mA
pF
K/W
°C
1. Thermal resistance: junction to case mounted on heat sink.
2. Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see
EU Directive Annex Notes 5 and 7.
DS30025 Rev. 5 - 2
1 of 2
www.diodes.com
SBG3030CT - SBG3060CT
ã
Diodes Incorporated

SBG3030CT-T-F Related Products

SBG3030CT-T-F SBG3030CT SBG3030CT_1 SBG3040CT SBG3060CT SBG3050CT SBG3040CT-T-F SBG3030CT-T SBG3050CT-T SBG3060CT-T
Description 15 A, 30 V, SILICON, RECTIFIER DIODE 30 A, 30 V, SILICON, RECTIFIER DIODE 30 A, 30 V, SILICON, RECTIFIER DIODE 30 A, 40 V, SILICON, RECTIFIER DIODE 30 A, 60 V, SILICON, RECTIFIER DIODE 30 A, 50 V, SILICON, RECTIFIER DIODE 30 A, 30 V, SILICON, RECTIFIER DIODE DIODE ARRAY SCHOTTKY 30V D2PAK DIODE ARRAY SCHOTTKY 50V D2PAK DIODE ARRAY SCHOTTKY 60V D2PAK

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