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SB5100-TB

Description
5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size52KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
Download Datasheet Parametric View All

SB5100-TB Overview

5 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD

SB5100-TB Parametric

Parameter NameAttribute value
MakerWon-Top Electronics Co., Ltd.
Parts packaging codeDO-201AD
package instructionPLASTIC PACKAGE-2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage100 V
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
WTE
POWER SEMICONDUCTORS
SB520 – SB5100
Pb
5.0A SCHOTTKY BARRIER DIODE
Features
!
!
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
!
High Current Capability
A
B
!
Low Power Loss, High Efficiency
!
High Surge Current Capability
!
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications

D
A
C
Mechanical Data
!
!
!
!
!
!
!
Case: DO-201AD, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 1.2 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
DO-201AD
Dim
Min
Max
25.4
A
7.20
9.50
B
1.20
1.30
C
4.80
5.30
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
L
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
@T
A
=25°C unless otherwise specified
SB520 SB530 SB540
20
14
30
21
40
28
SB550 SB560
50
35
5.0
60
42
SB580 SB5100
80
56
100
70
Unit
V
V
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 5.0A
@T
A
= 25°C
@T
A
= 100°C
I
FSM
V
FM
I
RM
C
j
R
JA
T
j
, T
STG
500
0.55
150
0.70
0.5
50
400
10
-65 to +150
0.85
A
V
mA
pF
°C/W
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating and Storage Temperature Range
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
SB520 – SB5100
1 of 4
© 2006 Won-Top Electronics
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