SB10150 datasheet, PDF - EEWORLD Datasheet

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SB10150: Description10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC; CategoryDiscrete semiconductor diode; File Size418KB，2 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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SB10150 Overview

10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AC

SB10150 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	ROHS COMPLIANT, PLASTIC PACKAGE-3/2
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.92 V
JEDEC-95 code	TO-220AC
JESD-30 code	R-PSFM-T2
JESD-609 code	e3
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	125 °C
Minimum operating temperature	-50 °C
Maximum output current	10 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	150 V
Maximum reverse current	500 µA
surface mount	NO
technology	SCHOTTKY
Terminal surface	Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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DATA SHEET

SB1020~SB10150

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE

20 to 150 Volts

CURRENT

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

• Exceeds environmental standards of

MIL-S-19500/228

• Low power loss, high efficiency.

• Low forwrd voltge, high current capability

• High surge capacity.

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• Pb free product are available : 99% Sn above can meet Rohs environment

substance directive request

.038(0.96)

.019(0.50)

.419(10.66)

.387(9.85)

.139(3.55)

MIN

10 Amperes

TO-220AC

Unit : inch (mm)

.196(5.00)

.163(4.16)

.054(1.39)

.045(1.15)

.269(6.85)

.226(5.75)

.624(15.87)

.50(12.7)MIN

.177(4.5)MAX

.548(13.93)

.025(0.65)MAX

MECHANICALDATA

Case: TO-220AC Molded plastic

Terminals: Solder plated, solderable per MIL-STD-202G, Method 208

Polarity: As marked.

Standard packaging: Any

Weight: 0.08 ounces, 2.24grams.

.1(2.54)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PA RA M E TE R

M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e

M a xi m um R M S V o l t a g e

M a xi m um D C B l o c k i ng V o l t a g e

M a xi m um A ve r a g e F o r w a r d C ur r e nt . 3 7 5 " ( 9 . 5 m m )

l e a d l e ng t h a t T c = 1 0 0

P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve

s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )

M a xi m um F o r w a r d V o l t a g e a t 1 0 A ,

M a x i m u m D C R e v e r s e C u r r e n t a t TA = 2 5

R a t e d D C B l o c k i n g V o l t a g e TA = 1 0 0

Ty p i c a l T h e r m a l R e s i s t a n c e

O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e

S YM B O L S B 1 0 2 0 S B 1 0 3 0 S B 1 0 4 0 S B 1 0 5 0 S B 1 0 6 0 S B 1 0 8 0 S B 1 0 1 0 0

RRM

RMS

F S M

0 .5 5

150

0 .7 5

0 .5

3 .0

- 5 0 TO + 1 2 5

0 .8 5

100

S B 1 0 1 5 0 U N IT S

150

105

150

0 .9 2

RθJ C

, T

S TG

C /W

Note.

Both Bonding and Chip structure are available.

REV.0-MAR.19.2005

PAGE . 1

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