Rectifier Diode, 1 Element, 1A, 800V V(RRM), Silicon, HERMETIC SEALED, GLASS PACKAGE-2
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Microsemi |
| package instruction | HERMETIC SEALED, GLASS PACKAGE-2 |
| Contacts | 2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Other features | HIGH RELIABILITY |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| JESD-30 code | O-LALF-W2 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 1 A |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Qualified |
| Guideline | MIL-19500 |
| Maximum repetitive peak reverse voltage | 800 V |
| Maximum reverse recovery time | 5 µs |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Base Number Matches | 1 |