IPU25CN10N G datasheet, PDF - EEWORLD Datasheet

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IPU25CN10N G: DescriptionMOSFET N-Ch 100V 35A IPAK-3; Categorysemiconductor Discrete semiconductor The transistor MOSFET; File Size1MB，12 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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IPU25CN10N G Overview

MOSFET N-Ch 100V 35A IPAK-3

IPU25CN10N G Parametric

Parameter Name	Attribute value
Maker	Infineon
Product Category	MOSFET
technology	Si
Installation style	Through Hole
Package/box	TO-251-3
Number of channels	1 Channel
Transistor polarity	N-Channel
Vds - drain-source breakdown voltage	100 V
Id-continuous drain current	35 A
Rds On - drain-source on-resistance	25 mOhms
Vgs - gate-source voltage	20 V
Minimum operating temperature	- 55 C
Maximum operating temperature	+ 175 C
Pd-power dissipation	71 W
Configuration	Single
channel mode	Enhancement
Encapsulation	Tube
high	6.22 mm
length	6.73 mm
Transistor type	1 N-Channel
width	2.38 mm
Forward transconductance - minimum	38 S / 19 S
Fall time	3 ns
Rise Time	4 ns
Factory packaging quantity	1500
Typical shutdown delay time	13 ns
Typical switch-on delay time	10 ns
unit weight	4 g

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