NUR460P
3 January 2014
Ultrafast power diode
Product data sheet
1. General description
Ultrafast power diode in a SOD141 (DO-201AD) axial lead plastic package.
2. Features and benefits
•
•
•
•
•
•
•
Axial leaded plastic package
Fast switching
High voltage capability
Low forward voltage drop
Low leakage current
Low thermal resistance
Soft recovery characteristic
3. Applications
•
•
Discontinuous Current Mode (DCM) Power Factor Correction (PFC)
High frequency switched-mode power supplies
4. Quick reference data
Table 1.
Symbol
V
RRM
I
F(AV)
Quick reference data
Parameter
repetitive peak reverse
voltage
average forward
current
forward voltage
δ = 0.5 ; square-wave pulse;
Fig. 1;
Fig. 2
I
F
= 3 A; T
j
= 150 °C;
Fig. 4
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; Ramp Recovery;
Fig. 5
I
R
= 1 A; I
F
= 0.5 A; I
R(meas)
= 0.25 A;
T
j
= 25 °C; Step Recovery;
Fig. 6
-
-
50
ns
Conditions
Min
-
-
Typ
-
-
Max
600
4
Unit
V
A
Static characteristics
V
F
t
rr
-
0.82
1.05
V
Dynamic characteristics
reverse recovery time
-
35
-
ns
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
NUR460P
Ultrafast power diode
5. Pinning information
Table 2.
Pin
1
2
Pinning information
Symbol Description
K
A
cathode
anode
Simplified outline
k
a
Graphic symbol
K
A
001aaa020
DO-201AD (SOD141)
6. Ordering information
Table 3.
Ordering information
Package
Name
NUR460P
NUR460P/L01
NUR460P/L02
NUR460P/L03
NUR460P/L04
NUR460P/L05
NUR460P/L06
NUR460P/L07
DO-201AD
DO-201AD
DO-201AD
DO-201AD
DO-201AD
DO-201AD
DO-201AD
DO-201AD
Description
Hermetically sealed plastic package; axial leaded; 2 leads
Hermetically sealed plastic package; axial leaded; 2 leads
Hermetically sealed plastic package; axial leaded; 2 leads
Hermetically sealed plastic package; axial leaded; 2 leads
Hermetically sealed plastic package; axial leaded; 2 leads
Hermetically sealed plastic package; axial leaded; 2 leads
Hermetically sealed plastic package; axial leaded; 2 leads
Hermetically sealed plastic package; axial leaded; 2 leads
Version
SOD141
SOD141
SOD141
SOD141
SOD141
SOD141
SOD141
SOD141
Type number
7. Marking
Table 4.
NUR460P
NUR460P/L01
NUR460P/L02
NUR460P/L03
NUR460P/L04
NUR460P/L05
NUR460P/L06
NUR460P/L07
Marking codes
Marking code
NXPNUR460P
Type number
NUR460P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
3 January 2014
2/9
NXP Semiconductors
NUR460P
Ultrafast power diode
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Parameter
repetitive peak reverse voltage
crest working reverse voltage
reverse voltage
average forward current
repetitive peak forward current
non-repetitive peak forward
current
DC
δ = 0.5 ; square-wave pulse;
Fig. 1;
Fig. 2
δ = 0.5 ; t
p
= 25 µs; square-wave pulse
t
p
= 10 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 3
t
p
= 8.3 ms; T
j(init)
= 25 °C; sine-wave
pulse;
Fig. 3
T
stg
T
j
8
P
tot
(W)
6
0.5
3
4
0.1
2
0.2
2
4.0
Conditions
Min
-
-
-
-
-
-
-
-65
-
Max
600
600
600
4
8
100
110
175
175
003aaj927
Unit
V
V
V
A
A
A
A
°C
°C
storage temperature
junction temperature
003aaj926
5
P
tot
(W)
4
2.8
2.2
1.9
a = 1.57
δ=1
1
0
0
2
4
I
F(AV)
(A)
6
0
0
1
2
3
I
F(AV)
(A)
4
Fig. 1.
Forward power dissipation as a function of
average forward current; square waveform;
maximum values
Fig. 2.
Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
NUR460P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
3 January 2014
3/9
NXP Semiconductors
NUR460P
Ultrafast power diode
10
3
003aag299
I
FSM
(A)
10
2
P
10
1
10
-5
t
p
t
10
-4
10
-3
t
p
(s)
10
-2
Fig. 3.
Non-repetitive peak forward current as a function of pulse width; square waveform; maximum values
9. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
Min
-
Typ
55
Max
-
Unit
K/W
10. Characteristics
Table 7.
Symbol
V
F
Characteristics
Parameter
forward voltage
Conditions
I
F
= 3 A; T
j
= 25 °C;
Fig. 4
I
F
= 3 A; T
j
= 150 °C;
Fig. 4
I
F
= 4 A; T
j
= 25 °C;
Fig. 4
I
R
reverse current
V
R
= 600 V; T
j
= 25 °C
V
R
= 600 V; T
j
= 150 °C
Dynamic characteristics
t
rr
reverse recovery time
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 50 A/µs;
T
j
= 25 °C; Ramp Recovery;
Fig. 5
I
F
= 1 A; V
R
= 30 V; dI
F
/dt = 100 A/µs;
T
j
= 25 °C; Ramp Recovery;
Fig. 5
I
F
= 0.5 A; I
R
= 1 A; I
R(meas)
= 0.25 A;
T
j
= 25 °C; Step Recovery;
Fig. 6
NUR460P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Min
-
-
-
-
-
Typ
-
0.82
-
-
-
Max
1.25
1.05
1.28
10
250
Unit
V
V
V
µA
µA
Static characteristics
-
-
-
-
35
-
75
-
50
ns
ns
ns
Product data sheet
3 January 2014
4/9
NXP Semiconductors
NUR460P
Ultrafast power diode
8
I
F
(A)
6
003aaj928
I
F
dl
F
dt
t
rr
4
(1)
(2)
(3)
time
25 %
Q
r
100 %
2
I
R
0
0
0.5
1
1.5
2
I
RM
003aac562
V
F
(V)
Fig. 5.
Reverse recovery definitions; ramp recovery
Fig. 4.
Forward current as a function of forward
voltage
I
F
I
F
t
rr
time
0.25 x I
R
Q
r
I
R
I
R
003aac563
Fig. 6.
Reverse recovery definitions; step recovery
NUR460P
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2014. All rights reserved
Product data sheet
3 January 2014
5/9
Talking
京公网安备 11010802033920号
EEWORLD
