IPP16CN10L G
OptiMOS
®
2 Power-Transistor
Features
• N-channel, logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target application
Product Summary
V
DS
R
DS(on),max
I
D
100
15.7
54
V
mΩ
A
• Ideal for high-frequency switching and synchronous rectification
Type
IPP16CN10L G
Package
Marking
PG-TO220-3
16CN10L
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
Pulsed drain current
2)
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
3)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
Value
54
38
216
105
6
±20
Unit
A
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
j
,
T
stg
T
C
=25 °C
I
D
=54 A,
R
GS
=25
Ω
I
D
=53 A,
V
DS
=80 V,
di /dt =100 A/µs,
T
j,max
=175 °C
mJ
kV/µs
V
W
°C
T
C
=25 °C
100
-55 ... 175
55/175/56
J-STD20 and JESD22
see figure 3
2)
3)
T
jmax
=150°C and duty cycle D=0.01 for Vgs<-5V
page 1
2007-10-01
Rev. 1.01
IPP16CN10L G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient
R
thJC
R
thJA
minimal footprint
6 cm2 cooling area
4)
-
-
-
-
-
-
1.5
62
40
K/W
Values
typ.
max.
Unit
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=61 µA
V
DS
=80 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=80 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=27 A
100
1.2
-
-
1.84
0.1
-
2.4
1
µA
V
-
-
-
10
1
15.3
100
100
20.8
nA
mΩ
V
GS
=10 V,
I
D
=54 A
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=54 A
-
-
45
12.9
1.1
89
15.7
-
-
Ω
S
2
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
4)
Rev. 1.01
page 2
2007-10-01
IPP16CN10L G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
5)
Gate to source charge
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
5)
Values
typ.
max.
Unit
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=50 V,
V
GS
=10 V,
I
D
=53 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=50 V,
f
=1 MHz
-
-
-
-
-
-
-
3150
393
23
11
8
30
4
4190
523
-
-
-
-
-
pF
ns
Q
gs
Q
gd
Q
sw
Q
g
V
plateau
Q
oss
V
DD
=50 V,
V
GS
=0 V
V
DD
=50 V,
I
D
=53 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
12
7
10
44
3.7
40
-
-
-
-
-
-
nC
V
nC
I
S
I
S,pulse
V
SD
t
rr
Q
rr
T
C
=25 °C
V
GS
=0 V,
I
F
=54 A,
T
j
=25 °C
V
R
=50 V,
I
F
=I
S
,
di
F
/dt =100 A/µs
-
-
-
-
-
-
-
1
103
215
54
216
1.2
A
V
ns
-
nC
See figure 16 for gate charge parameter definition
Rev. 1.01
page 3
2007-10-01
IPP16CN10L G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
120
60
100
50
80
40
P
tot
[W]
60
I
D
[A]
0
50
100
150
200
30
40
20
20
10
0
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
1 µs
10 µs
10
2
100 µs
10
0
0.5
I
D
[A]
1 ms
Z
thJC
[K/W]
10
1
0.2
0.1
10 ms
10
-1
0.05
10
0
DC
0.02
0.01
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
3
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.01
page 4
2007-10-01
IPP16CN10L G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
250
10 V
7.5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
50
45
40
5V
3.5 V
3.2 V
200
35
4.5 V
R
DS(on)
[m
Ω
]
150
30
25
20
15
4V
I
D
[A]
100
4V
7.5 V
10 V
50
3.5 V
3.2 V
3V
10
5
0
0
0
1
2
3
4
5
0
20
40
60
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
100
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
120
100
80
50
g
fs
[S]
175 °C
25 °C
I
D
[A]
60
40
20
0
0
2
4
6
0
0
20
40
60
80
V
GS
[V]
I
D
[A]
Rev. 1.01
page 5
2007-10-01
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