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SMBJ18CA/52

Description
ESD suppressor/TVS diode 600W 18V 5% Bidir
CategoryDiscrete semiconductor    diode   
File Size109KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

SMBJ18CA/52 Overview

ESD suppressor/TVS diode 600W 18V 5% Bidir

SMBJ18CA/52 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
Reach Compliance Codeunknown
ECCN codeEAR99
Breakdown voltage nominal value21.05 V
Maximum clamping voltage29.2 V
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-609 codee0
polarityBIDIRECTIONAL
Maximum repetitive peak reverse voltage18 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
SMBJ3V3
www.vishay.com
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Uni-directional polarity only
• Peak pulse power: 600 W (10/1000 μs)
• Excellent clamping capability
• Very fast response time
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
SMB (DO-214AA)
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units specifically for
protecting 3.3 V supplied sensitive equipment against
transient overvoltages.
4.1 V
3.3 V
600 W
5W
60 A
175 °C
Uni-directional
SMB (DO-214AA)
PRIMARY CHARACTERISTICS
V
BR
(uni-directional)
V
WM
P
PPM
P
D
I
FSM
(uni-directional only)
T
J
max.
Polarity
Package
MECHANICAL DATA
Case:
SMB (DO-214AA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant and commercial grade
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation
(1)(2)
Peak pulse current with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a 8/20 μs waveform (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
(2)
Power dissipation on infinite heatsink, T
A
= 75 °C
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 1
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM
I
PP
I
PPM
I
FSM
P
D
T
J
, T
STG
VALUE
600
50
200
60
5
-65 to +175
UNIT
W
A
A
A
W
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE
TYPE
DEVICE
MARKING
CODE
BREAKDOWN
VOLTAGE
V
BR
AT I
T
MIN.
V
SMBJ3V3
KC
4.1
mA
1.0
MAXIMUM
REVERSE
LEAKAGE
CURRENT
I
R
AT V
WM
μA
200
TYPICAL
MAXIMUM MAXIMUM
TYPICAL
JUNCTION
STAND-OFF CLAMPING CLAMPING
TEMPERATURE
CAPACITANCE
VOLTAGE VOLTAGE
VOLTAGE
COEFFICIENT
C
J
AT 0 V
V
C
AT I
PP
V
C
AT I
PPM
V
WM
OF V
BR
1 MHz
10/1000 μs
8/20 μs
V
3.3
V
7.3
A
50
V
10.3
A
200
10
-4
/°C
-5.3
pF
5200
Revision: 16-Jan-18
Document Number: 88940
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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