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GS81313HT18GK-625

Description
Static random access memory 1.5V 8M x 18 144M
Categorysemiconductor    Memory IC    Static random access memory   
File Size204KB,29 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Environmental Compliance
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GS81313HT18GK-625 Overview

Static random access memory 1.5V 8M x 18 144M

GS81313HT18GK-625 Parametric

Parameter NameAttribute value
MakerGSI Technology
Product Categorystatic random access memory
storage144 Mbit
organize8 M x 18
maximum clock frequency625 MHz
Interface TypeParallel
Supply voltage - max.1.35 V
Supply voltage - min.1.2 V
Supply current—max.1.2 A
Minimum operating temperature0 C
Maximum operating temperature+ 70 C
Installation styleSMD/SMT
Package/boxBGA-260
EncapsulationTray
storage typeDDR-III
seriesGS81313HT18GK
typeSigmaDDR-III
Factory packaging quantity10
GS81313HT18/36GK-833/714/625
260-Pin BGA
Com & Ind Temp
HSTL I/O
Features
4Mb x 36 and 8Mb x 18 organizations available
833 MHz maximum operating frequency
833 MT/s peak transaction rate (in millions per second)
60 Gb/s peak data bandwidth (in x36 devices)
Common I/O DDR Data Bus
Non-multiplexed SDR Address Bus
One operation - Read or Write - per clock cycle
Burst of 2 Read and Write operations
3 cycle Read Latency
On-chip ECC with virtually zero SER
1.25V ~ 1.3V core voltage
1.5V HSTL I/O interface
Configurable ODT (on-die termination)
ZQ pin for programmable driver impedance
ZT pin for programmable ODT impedance
IEEE 1149.1 JTAG-compliant Boundary Scan
260-pin, 14 mm x 22 mm, 1 mm ball pitch, 6/6 RoHS-
compliant BGA package
144Mb SigmaDDR-IIIe™
Burst of 2 ECCRAM™
Clocking and Addressing Schemes
Up to 833 MHz
1.25V ~ 1.3V V
DD
1.5V V
DDQ
The GS81313HT18/36GK SigmaDDR-IIIe ECCRAMs are
synchronous devices. They employ three pairs of positive and
negative input clocks; one pair of master clocks, CK and CK,
and two pairs of write data clocks, KD[1:0] and KD[1:0]. All
six input clocks are single-ended; that is, each is received by a
dedicated input buffer.
CK and CK are used to latch address and control inputs, and to
control all output timing. KD[1:0] and KD[1:0] are used solely
to latch data inputs.
Each internal read and write operation in a SigmaDDR-IIIe B2
ECCRAM is two times wider than the device I/O bus. An input
data bus de-multiplexer is used to accumulate incoming data
before it is simultaneously written to the memory array. An
output data multiplexer is used to capture the data produced
from a single memory array read and then route it to the
appropriate output drivers as needed. Therefore, the address
field of a SigmaDDR-IIIe B2 ECCRAM is always one address
pin less than the advertised index depth (e.g. the 8M x 18 has
4M addressable index).
SigmaDDR-IIIe™ Family Overview
SigmaDDR-IIIe ECCRAMs are the Common I/O half of the
SigmaQuad-IIIe/SigmaDDR-IIIe family of high performance
ECCRAMs. Although very similar to GSI's second generation
of networking SRAMs (the SigmaQuad-II/SigmaDDR-II
family), these third generation devices offer several new
features that help enable significantly higher performance.
On-Chip Error Correction Code
GSI's ECCRAMs implement an ECC algorithm that detects
and corrects all single-bit memory errors, including those
induced by SER events such as cosmic rays, alpha particles,
etc. The resulting Soft Error Rate of these devices is
anticipated to be <0.002 FITs/Mb — a 5-order-of-magnitude
improvement over comparable SRAMs with no on-chip ECC,
which typically have an SER of 200 FITs/Mb or more.
All quoted SER values are at sea level in New York City.
Parameter Synopsis
Speed Grade
-833
-714
-625
Max Operating Frequency
833 MHz
714 MHz
625 MHz
Read Latency
3 cycles
3 cycles
3 cycles
V
DD
1.2V to 1.35V
1.2V to 1.35V
1.2V to 1.35V
Rev: 1.12 5/2016
1/29
© 2014, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS81313HT18GK-625 Related Products

GS81313HT18GK-625 GS81313HT18GK-625I GS81313HT36GK-625I
Description Static random access memory 1.5V 8M x 18 144M SRAM 1.5V 8M x 18 144M SRAM 1.5V 4M x 36 144M
Product Category static random access memory SRAM SRAM
Interface Type Parallel Parallel Parallel
Product Attribute - Attribute Value Attribute Value
Manufacturer - GSI Technology GSI Technology
RoHS - Details Details
Memory Size - 144 Mbit 144 Mbit
Organization - 8 M x 18 4 M x 36
Maximum Clock Frequency - 625 MHz 625 MHz
Supply Voltage - Max - 1.35 V 1.35 V
Supply Voltage - Min - 1.2 V 1.2 V
Supply Current - Max - 1.2 A 1.2 A
Minimum Operating Temperature - - 40 C - 40 C
Maximum Operating Temperature - + 85 C + 85 C
Mounting Style - SMD/SMT SMD/SMT
Package / Case - BGA-260 BGA-260
Packaging - Tray Tray
Memory Type - DDR-III DDR-III
Type - SigmaDDR-III SigmaDDR-III
Moisture Sensitive - Yes Yes
Factory Pack Quantity - 10 10

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