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RMLV0808BGSB-4S2#HA0

Description
Static Random Access Memory 8Mb 3V Adv. Static Random Access Memory x8 TSOP44, 45ns, WTR
Categorystorage    storage   
File Size231KB,14 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance
Download Datasheet Parametric View All

RMLV0808BGSB-4S2#HA0 Overview

Static Random Access Memory 8Mb 3V Adv. Static Random Access Memory x8 TSOP44, 45ns, WTR

RMLV0808BGSB-4S2#HA0 Parametric

Parameter NameAttribute value
Brand NameRenesas
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRenesas Electronics Corporation
Parts packaging codeTSOP(2)
package instructionTSOP2-44
Contacts44
Manufacturer packaging codePTSB0044GG-A44
Reach Compliance Codecompliant
Factory Lead Time18 weeks
Samacsys DescriptionLow Power SRAM
RMLV0808BGSB - 4S2
8Mb Advanced LPSRAM (1024k word × 8bit)
R10DS0232EJ0200
Rev.2.00
2015.06.26
Description
The RMLV0808BGSB is a family of 8-Mbit static RAMs organized 1,048,576-word × 8-bit, fabricated by Renesas’s
high-performance Advanced LPSRAM technologies. The RMLV0808BGSB has realized higher density, higher
performance and low power consumption. The RMLV0808BGSB offers low power standby power dissipation;
therefore, it is suitable for battery backup systems. It is offered in 44pin TSOP (II).
Features
Single 3V supply: 2.4V to 3.6V
Access time:
──
Power supply voltage from 2.7V to 3.6V: 45ns (max.)
──
Power supply voltage from 2.4V to 2.7V: 55ns (max.)
Current consumption:
──
Standby: 0.45µA (typ.)
Equal access and cycle times
Common data input and output
──
Three state output
Directly TTL compatible
──
All inputs and outputs
Battery backup operation
Part Name Information
Part Name
Power supply
2.7V to 3.6V
RMLV0808BGSB-4S2
2.4V to 2.7V
55 ns
Access time
45 ns
-40 ~ +85°C
11.76mm×18.41mm 44pin plastic TSOP(II)
Temperature
Range
Package
R10DS0232EJ0200 Rev.2.00
2015.06.26
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