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CG2H30070F-TB1

Description
RF development tool Test Board without GaN HEMT
CategoryEmbedded solution    Engineering tools    Rf/wireless development tools    Rf development tools   
File Size3MB,13 Pages
ManufacturerWolfspeed (Cree)
Download Datasheet Parametric View All

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CG2H30070F-TB1 Overview

RF development tool Test Board without GaN HEMT

CG2H30070F-TB1 Parametric

Parameter NameAttribute value
MakerWolfspeed (Cree)
Product CategoryRF development tools
RoHSN
productEvaluation Boards
typeRF Transistors
Tools for assessmentCG2H30070F
frequency0.5 GHz to 3 GHz
Working power voltage28 V
EncapsulationBulk
Description/FunctionTest Board
Factory packaging quantity2
CG2H30070
70 W, 0.5—3.0 GHz, 28 V, RF Power GaN HEMT
Cree’s CG2H30070 is an internally matched gallium nitride (GaN) high electron mobility transistor
(HEMT). The CG2H30070, operating from a 28 volt rail, offers a general purpose, broadband
solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high
gain and wide bandwidth capabilities making the CG2H30070 ideal for linear and compressed
amplifier circuits. The transistor is available in a flange package.
Package Type
: 440224
PN: CG2H300
70F
Typical Performance Over 0.5 - 3.0 GHz
(T
C
= 25˚C)
Parameter
Small Signal Gain (S21)
Gain @ P
in
39 dBm
Output Power @ P
in
39 dBm
EFF @ P
in
39 dBm
Note: Conditions CW
500 MHz
16.7
10.3
85
63
1000 MHz 1500 MHz 2000 MHz 2500 MHz 3000 MHz
15.3
10.4
88
57.5
17.3
10.6
90
55.6
15
9.8
76
63.4
16.3
11.4
109
62.1
14.8
10.5
89
59.8
Units
dB
dB
W
%
Features
Applications
ber 2017
Rev 1.2 - Novem
0.5 - 3.0 GHz Operation
70 W P
OUT
typical at 28 V
10 dB Power Gain
58 % Drain Efficiency
Internally Matched
Broadband Amplifiers
Milcom
Radar
Data Link
Subject to change without notice.
www.cree.com/rf
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