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CY7C1041GE-10VXIT

Description
Static Random Access Memory Async Static Random Access Memory S
Categorysemiconductor    Memory IC    Static random access memory   
File Size507KB,22 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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CY7C1041GE-10VXIT Overview

Static Random Access Memory Async Static Random Access Memory S

CY7C1041GE-10VXIT Parametric

Parameter NameAttribute value
MakerCypress Semiconductor
Product Categorystatic random access memory
storage4 Mbit
organize256 k x 16
interview time10 ns
Interface TypeParallel
Supply voltage - max.5.5 V
Supply voltage - min.4.5 V
Supply current—max.45 mA
Minimum operating temperature- 40 C
Maximum operating temperature+ 85 C
Installation styleSMD/SMT
Package/boxSOJ-44
EncapsulationReel
storage typeSDR
Factory packaging quantity500
CY7C1041G
CY7C1041GE
4-Mbit (256K words × 16-bit) Static RAM
with Error-Correcting Code (ECC)
4-Mbit (256K words × 16-bit) Static RAM with Error-Correcting Code (ECC)
Features
High speed
t
AA
= 10 ns/15 ns
Embedded ECC for single-bit error correction
[1, 2]
Low active and standby currents
Active current: I
CC
= 38 mA typical
Standby current: I
SB2
= 6 mA typical
Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and
4.5 V to 5.5 V
1.0-V data retention
TTL-compatible inputs and outputs
Error indication (ERR) pin to indicate 1-bit error detection and
correction
Pb-free 44-pin SOJ, 44-pin TSOP II, and 48-ball VFBGA
packages
Data writes are performed by asserting the Chip Enable (CE) and
Write Enable (WE) inputs LOW, while providing the data on I/O
0
through I/O
15
and address on A
0
through A
17
pins. The Byte High
Enable (BHE) and Byte Low Enable (BLE) inputs control write
operations to the upper and lower bytes of the specified memory
location. BHE controls I/O
8
through I/O
15
and BLE controls I/O
0
through I/O
7
.
Data reads are performed by asserting the Chip Enable (CE) and
Output Enable (OE) inputs LOW and providing the required
address on the address lines. Read data is accessible on the I/O
lines (I/O
0
through I/O
15
). Byte accesses can be performed by
asserting the required byte enable signal (BHE or BLE) to read
either the upper byte or the lower byte of data from the specified
address location.
All I/Os (I/O
0
through I/O
15
) are placed in a high-impedance state
during the following events:
The device is deselected (CE HIGH)
The control signals (OE, BLE, BHE) are de-asserted
Functional Description
CY7C1041G and CY7C1041GE are high-performance CMOS
fast static RAM devices with embedded ECC. Both devices are
offered in single chip-enable option and in multiple pin
configurations. The CY7C1041GE device includes an ERR pin
that signals an error-detection and correction event during a read
cycle.
On the CY7C1041GE devices, the detection and correction of a
single-bit error in the accessed location is indicated by the
assertion of the ERR output (ERR = HIGH)
[1]
. See the
Truth
Table on page 14
for a complete description of read and write
modes.
The logic block diagram is on page 2.
Product Portfolio
Product
[3]
Features and Options (see
Pin
Configurations on page 4)
Range
V
CC
Range
(V)
1.65 V–2.2 V
2.2 V–3.6 V
4.5 V–5.5 V
Power Dissipation
Speed
(ns) Operating I
CC
, (mA)
Standby, I
SB2
(mA)
f = f
max
10/15
Typ
[4]
Max
Typ
[4]
Max
15
10
10
38
38
40
45
45
6
8
CY7C1041G(E)18 Single Chip Enable
CY7C1041G(E)30
CY7C1041G(E)
Optional ERR pins
Industrial
Notes
1. This device does not support automatic write-back on error detection.
2. SER FIT Rate <0.1 FIT/Mb. Refer
AN88889
for details.
3. The ERR pin is available only for devices which have ERR option “E” in the ordering code. Refer
Ordering Information on page 15
for details.
4. Typical values are included only for reference and are not guaranteed or tested. Typical values are measured at V
CC
= 1.8 V (for a V
CC
range of 1.65 V–2.2 V),
V
CC
= 3 V (for a V
CC
range of 2.2 V–3.6 V), and V
CC
= 5 V (for a V
CC
range of 4.5 V–5.5 V), T
A
= 25 °C.
Cypress Semiconductor Corporation
Document Number: 001-91368 Rev. *N
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised July 13, 2018

CY7C1041GE-10VXIT Related Products

CY7C1041GE-10VXIT CY7C1041G18-15BVXIT
Description Static Random Access Memory Async Static Random Access Memory S Static Random Access Memory Async Static Random Access Memory S
Maker Cypress Semiconductor Cypress Semiconductor
Product Category static random access memory static random access memory
storage 4 Mbit 4 Mbit
organize 256 k x 16 256 k x 16
interview time 10 ns 15 ns
Interface Type Parallel Parallel
Supply voltage - max. 5.5 V 2.2 V
Supply voltage - min. 4.5 V 1.65 V
Supply current—max. 45 mA 40 mA
Minimum operating temperature - 40 C - 40 C
Maximum operating temperature + 85 C + 85 C
Installation style SMD/SMT SMD/SMT
Package/box SOJ-44 VFBGA-48
Encapsulation Reel Reel
storage type SDR SDR
Factory packaging quantity 500 2000
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