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CY14B104NA-ZS45XET

Description
NVRAM Non Volatile SRAMs
Categorysemiconductor    Memory IC    NVRAM   
File Size595KB,26 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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CY14B104NA-ZS45XET Overview

NVRAM Non Volatile SRAMs

CY14B104NA-ZS45XET Parametric

Parameter NameAttribute value
MakerCypress Semiconductor
Product CategoryNVRAM
Package/boxTSOP-44
Interface TypeParallel
storage4 Mbit
organize256 k x 16
Data bus width16 bit
interview time45 ns
Supply voltage - max.3.6 V
Supply voltage - min.3 V
Working power current35 mA
Minimum operating temperature- 40 C
Maximum operating temperature+ 125 C
seriesCY14B104NA
EncapsulationReel
Installation styleSMD/SMT
Pd-power dissipation1 W
Factory packaging quantity1000
CY14B104NA
4-Mbit (256K × 16) Automotive nvSRAM
4-Mbit (256K × 16) Automotive nvSRAM
Features
25 ns and 45 ns access times
Internally organized as 256K × 16
Hands off automatic STORE on power-down with only a small
capacitor
STORE to QuantumTrap non-volatile elements initiated by
software, device pin, or AutoStore on power-down
RECALL to SRAM initiated by software or power-up
High reliability
Infinite read, write, and recall cycles
STORE cycles to QuantumTrap
• Automotive-A: 1,000K STORE cycles
• Automotive-E: 100K STORE cycles
Data retention
Automotive-A: 20 years
Automotive-E: 1 year
Automotive-A Temperature: –40
C
to +85
C
Single 3 V +20, -10 Operation
Automotive-E Temperature: –40
C
to +125
C
Single 3.3 V + 0.3 V Operation
Packages
48-ball fine-pitch ball grid array (FBGA)
44-pin thin small outline package (TSOP) Type II
Pb-free and restriction of hazardous substances (RoHS)
compliant
Functional Description
The Cypress CY14B104NA is a fast static RAM (SRAM), with a
non-volatile element in each memory cell. The memory is
organized as 256K words of 16-bits each. The embedded
nonvolatile elements incorporate QuantumTrap technology,
producing the world’s most reliable nonvolatile memory. The
SRAM provides infinite read and write cycles, while independent
non-volatile data resides in the highly reliable QuantumTrap cell.
Data transfers from the SRAM to the nonvolatile elements (the
STORE operation) takes place automatically at power-down. On
power-up, data is restored to the SRAM (the RECALL operation)
from the nonvolatile memory. Both the STORE and RECALL
operations are also available under software control.
Logic Block Diagram
Cypress Semiconductor Corporation
Document Number: 001-54469 Rev. *I
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised January 5, 2018
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