EEWORLDEEWORLDEEWORLD

Part Number

Search

GS8662T36BD-350M

Description
Static random access memory 1.8 or 1.5V 2M x 36 72M
Categorystorage    storage   
File Size232KB,31 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
Download Datasheet Parametric Compare View All

GS8662T36BD-350M Online Shopping

Suppliers Part Number Price MOQ In stock  
GS8662T36BD-350M - - View Buy Now

GS8662T36BD-350M Overview

Static random access memory 1.8 or 1.5V 2M x 36 72M

GS8662T36BD-350M Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerGSI Technology
package instructionLBGA,
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Factory Lead Time8 weeks
Maximum access time0.45 ns
JESD-30 codeR-PBGA-B165
length15 mm
memory density75497472 bit
Memory IC TypeDDR SRAM
memory width36
Number of functions1
Number of terminals165
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize2MX36
Package body materialPLASTIC/EPOXY
encapsulated codeLBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width13 mm
GS8662T08/09/18/36BD-350M
165-Bump BGA
Military Temp
Features
• Military Temperature Range
• Simultaneous Read and Write SigmaDDR™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write (x36, x18 and x9) and Nybble Write (x8) function
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with present 9Mb, 18Mb, 36Mb and 72Mb
devices
• 165-bump, 13 mm x 15 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
72Mb SigmaDDR-II
TM
Burst of 2 SRAM
350 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
inputs, not differential inputs to a single differential clock input
buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and
C clock inputs. C and C are also independent single-ended
clock inputs, not differential inputs. If the C clocks are tied
high, the K clocks are routed internally to fire the output
registers instead.
Each internal read and write operation in a SigmaDDR-II B2
RAM is two times wider than the device I/O bus. An input data
bus de-multiplexer is used to accumulate incoming data before
it is simultaneously written to the memory array. An output
data multiplexer is used to capture the data produced from a
single memory array read and then route it to the appropriate
output drivers as needed.
When a new address is loaded into a x18 or x36 version of the
part, A0 is used to initialize the pointers that control the data
multiplexer / de-multiplexer so the RAM can perform "critical
word first" operations. From an external address point of view,
regardless of the starting point, the data transfers always follow
the same sequence {0, 1} or {1, 0} (where the digits shown
represent A0).
Unlike the x18 and x36 versions, the input and output data
multiplexers of the x8 and x9 versions are not preset by
address inputs and therefore do not allow "critical word first"
operations. The address fields of the x8 and x9 SigmaDDR-II
B2 RAMs are one address pin less than the advertised index
depth (e.g., the 8M x 8 has an 4M addressable index, and A0
not an accessible address pin).
SigmaDDR™ Family Overview
The GS8662T08/09/18/36BD are built in compliance with the
SigmaDDR-II SRAM pinout standard for Common I/O
synchronous SRAMs. They are 75,497,472-bit (72Mb)
SRAMs. The GS8662T08/09/18/36BD SigmaDDR-II SRAMs
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS8662T08/09/18/36BD SigmaDDR-II SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
Parameter Synopsis
-350M
tKHKH
tKHQV
2.86 ns
0.45 ns
Rev: 1.00 10/2012
1/31
© 2012, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

GS8662T36BD-350M Related Products

GS8662T36BD-350M GS8662T18BD-350M GS8662T09BD-350M
Description Static random access memory 1.8 or 1.5V 2M x 36 72M SRAM 1.8 or 1.5V 4M x 18 72M SRAM 1.8 or 1.5V 8M x 9 72M
Is it Rohs certified? incompatible incompatible incompatible
Maker GSI Technology GSI Technology GSI Technology
package instruction LBGA, LBGA, LBGA,
Reach Compliance Code compliant compliant compliant
ECCN code 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B
Factory Lead Time 8 weeks 8 weeks 8 weeks
Maximum access time 0.45 ns 0.45 ns 0.45 ns
JESD-30 code R-PBGA-B165 R-PBGA-B165 R-PBGA-B165
length 15 mm 15 mm 15 mm
memory density 75497472 bit 75497472 bit 75497472 bit
Memory IC Type DDR SRAM DDR SRAM DDR SRAM
memory width 36 18 9
Number of functions 1 1 1
Number of terminals 165 165 165
word count 2097152 words 4194304 words 8388608 words
character code 2000000 4000000 8000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C
organize 2MX36 4MX18 8MX9
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code LBGA LBGA LBGA
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Maximum seat height 1.4 mm 1.4 mm 1.4 mm
Maximum supply voltage (Vsup) 1.9 V 1.9 V 1.9 V
Minimum supply voltage (Vsup) 1.7 V 1.7 V 1.7 V
Nominal supply voltage (Vsup) 1.8 V 1.8 V 1.8 V
surface mount YES YES YES
technology CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY
Terminal form BALL BALL BALL
Terminal pitch 1 mm 1 mm 1 mm
Terminal location BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 13 mm 13 mm 13 mm

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 140  2778  288  231  714  3  56  6  5  15 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号