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GS8322Z18AB-400I

Description
Static random access memory 2.5 or 3.3V 2M x 18 36M
Categorystorage    storage   
File Size307KB,37 Pages
ManufacturerGSI Technology
Websitehttp://www.gsitechnology.com/
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GS8322Z18AB-400I Overview

Static random access memory 2.5 or 3.3V 2M x 18 36M

GS8322Z18AB-400I Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instructionBGA, BGA119,7X17,50
Contacts119
Reach Compliance Codecompliant
ECCN code3A991.B.2.B
Factory Lead Time8 weeks
Maximum access time4 ns
Other featuresALSO OPERATES AT 3.3V SUPPLY, PIPELINED ARCHITECTURE, FLOW THROUGH
Maximum clock frequency (fCLK)400 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B119
JESD-609 codee0
length22 mm
memory density37748736 bit
Memory IC TypeZBT SRAM
memory width18
Number of functions1
Number of terminals119
word count2097152 words
character code2000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Encapsulate equivalent codeBGA119,7X17,50
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.5/3.3 V
Certification statusNot Qualified
Maximum seat height1.99 mm
Maximum standby current0.04 A
Minimum standby current2.3 V
Maximum slew rate0.325 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.3 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formBALL
Terminal pitch1.27 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
width14 mm
Base Number Matches1
GS8322Z18/36A(B/D)-400/375/333/250/200/150
119 & 165 BGA
Commercial Temp
Industrial Temp
Features
• NBT (No Bus Turn Around) functionality allows zero wait
Read-Write-Read bus utilization; fully pin-compatible with
both pipelined and flow through NtRAM™, NoBL™ and
ZBT™ SRAMs
• 2.5 V or 3.3 V +10%/–10% core power supply
• 2.5 V or 3.3 V I/O supply
• User-configurable Pipeline and Flow Through mode
• ZQ mode pin for user-selectable high/low output drive
• IEEE 1149.1 JTAG-compatible Boundary Scan
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2Mb, 4Mb, 8Mb, and 16Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ Pin for automatic power-down
• JEDEC-standard 119-bump and 165-bump BGA packages
• RoHS-compliant packages available
36Mb Pipelined and Flow Through
Synchronous NBT SRAM
400 MHz–150 MHz
2.5 V or 3.3 V V
DD
2.5 V or 3.3 V I/O
Because it is a synchronous device, address, data inputs, and
read/write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable (ZZ) and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8322Z18/36A may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising edge triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge-triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8322Z18/36A is implemented with GSI's high
performance CMOS technology and is available in a JEDEC-
standard 119-bump or 165-bump BGA package.
Functional Description
The GS8322Z18/36A is a 36Mbit Synchronous Static SRAM.
GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other
pipelined read/double late write or flow through read/single
late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
t
KQ
tCycle
Curr
(x18)
Curr
(x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x36)
-400
2.5
2.5
395
475
4.0
4.0
290
335
-375
2.5
2.66
390
455
4.2
4.2
275
320
-333
2.5
3.3
355
415
4.5
4.5
260
305
-250
2.5
4.0
280
335
5.5
5.5
235
270
-200
3.0
5.0
240
280
6.5
6.5
200
240
-150
3.8
6.7
205
230
7.5
7.5
190
220
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
Rev: 1.03 8/2013
1/37
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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