25AA080C/D, 25LC080C/D
8K SPI Bus Serial EEPROM
Device Selection Table
Part Number
25LC080C
25AA080C
25LC080D
25AA080D
V
CC
Range
2.5-5.5V
1.8-5.5V
2.5-5.5V
1.8-5.5V
Page Size
16 Byte
16 Byte
32 Byte
32 Byte
Temp. Ranges
I, E
I
I, E
I
Packages
P, SN, ST, MS, MN
P, SN, ST, MS, MN
P, SN, ST, MS, MN
P, SN, ST, MS, MN
Features:
• Max. Clock 10 MHz
• Low-Power CMOS Technology:
- Max. write current: 5 mA at 5.5V
- Read current: 5 mA at 5.5V, 10 MHz
- Standby current: 5
A
at 5.5V
• 1024 x 8-bit Organization
• 16 Byte Page (‘C’ version devices)
• 32 Byte Page (‘D’ version devices)
• Self-Timed Erase and Write Cycles (5 ms max.)
• Block Write Protection:
- Protect none, 1/4, 1/2 or all of array
• Built-In Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
• Sequential Read
• High Reliability:
- Endurance: > 1M erase/write cycles
- Data retention: > 200 years
- ESD protection: > 4000V
• Pb-Free and RoHS Compliant
• Temperature Ranges Supported:
- Industrial (I):
-40C to +85C
- Automotive (E):
-40°C to +125°C
Description:
The Microchip Technology Inc. 25AA080C/D,
25LC080C/D (25XX080C/D
*
) are 8 Kbit Serial Electri-
cally Erasable PROMs. The memory is accessed via a
simple Serial Peripheral Interface (SPI) compatible
serial bus. The bus signals required are a clock input
(SCK) plus separate data in (SI) and data out (SO)
lines. Access to the device is controlled through a Chip
Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
Chip Select, allowing the host to service higher priority
interrupts.
The 25XX080C/D is available in standard packages
including 8-lead PDIP and SOIC, and advanced pack-
aging including 8-lead MSOP, TSSOP, and 2x3 TDFN.
All packages are Pb-free and RoHS compliant.
Package Types (not to scale)
TSSOP/MSOP
(ST, MS)
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
PDIP/SOIC
(P, SN)
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
TDFN
(MN)
CS 1
SO 2
WP 3
8
7
6
5
V
CC
HOLD
SCK
V
SS
4
SI
*25XX080C/D is used in this document as a generic part
number for the 25AA080C/D, 25LC080C/D.
2009-2012 Microchip Technology Inc.
DS22151B-page 1
25XX080C/D
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. V
SS
......................................................................................................... -0.6V to V
CC
+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Industrial (I):
T
A
= -40°C to +85°C
Automotive (E): T
A
= -40°C to +125°C
Min.
0.7 V
CC
-0.3
-0.3
—
—
V
CC
-0.5
Max.
V
CC
+1
0.3 V
CC
0.2 V
CC
0.4
0.2
—
±1
±1
—
7
Units
V
V
V
V
V
V
A
A
pF
—
V
CC
2.7V
V
CC
< 2.7V
I
OL
= 2.1 mA
I
OL
= 1.0 mA, V
CC
< 2.5V
I
OH
= -400
A
CS = V
CC
, V
IN
= V
SS OR
V
CC
CS = V
CC
, V
OUT
= V
SS OR
V
CC
T
A
= 25°C, CLK = 1.0 MHz,
V
CC
= 5.0V
(Note)
V
CC
= 5.5V; F
CLK
= 10.0 MHz;
SO = Open
V
CC
= 2.5V; F
CLK
= 5.0 MHz;
SO = Open
V
CC
= 5.5V
V
CC
= 2.5V
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
, T
A
= +125°C
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
, T
A
= +85°C
V
CC
= 1.8V to 5.5V
V
CC
= 2.5V to 5.5V
Test Conditions
DC CHARACTERISTICS
Param.
No.
D001
D002
D003
D004
D005
D006
D007
D008
D009
Sym.
V
IH1
V
IL1
V
IL2
V
OL1
V
OL2
V
OH
I
LI
I
LO
C
INT
Characteristic
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
voltage
Input leakage current
Output leakage
current
Internal Capacitance
(all inputs and
outputs)
D010
I
CC
Read
Operating Current
—
—
5
2.5
mA
mA
mA
mA
A
A
D011
D012
I
CC
Write
Iccs
Standby Current
—
—
—
—
5
3
5
1
Note:
This parameter is periodically sampled and not 100% tested.
DS22151B-page 2
2009-2012 Microchip Technology Inc.
25XX080C/D
TABLE 1-2:
AC CHARACTERISTICS (CONTINUED)
Industrial (I):
T
A
= -40°C to +85°C
Automotive (E): T
A
= -40°C to +125°C
Min.
20
40
80
30
60
160
30
60
160
—
1M
Max.
—
—
—
—
—
—
—
—
—
5
—
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
V
CC
= 1.8V to 5.5V
V
CC
= 2.5V to 5.5V
Test Conditions
4.5V
V
CC
5.5V
2.5V
V
CC
4.5V
1.8V
V
CC
2.5V
4.5V
V
CC
5.5V
(Note
1)
2.5V
V
CC
4.5V
(Note
1)
1.8V
V
CC
2.5V
(Note
1)
4.5V
V
CC
5.5V
2.5V
V
CC
4.5V
1.8V
V
CC
2.5V
(Note
2)
AC CHARACTERISTICS
Param.
Sym.
No.
17
T
HH
Characteristic
HOLD Hold Time
18
T
HZ
HOLD Low to Output
High-Z
HOLD High to Output
Valid
Internal Write Cycle Time
Endurance
19
T
HV
20
21
T
WC
—
E/W 25°C, V
CC
= 5.5V
(Note
3)
Cycles
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
T
WC
begins on the rising edge of CS after a valid write sequence and ends when the internal write cycle is
complete.
3:
This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance™ Model which can be obtained from our web site:
www.microchip.com.
TABLE 1-3:
AC Waveform:
V
LO
= 0.2V
AC TEST CONDITIONS
—
(Note
1)
(Note
2)
—
0.5 V
CC
0.5 V
CC
V
HI
= V
CC
- 0.2V
V
HI
= 4.0V
C
L
= 50 pF
Timing Measurement Reference Level
Input
Output
Note 1:
For V
CC
4.0V
2:
For V
CC
> 4.0V
DS22151B-page 4
2009-2012 Microchip Technology Inc.
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