S26KL512S/S26KS512S
S26KL256S/S26KS256S
S26KL128S/S26KS128S
512 Mb (64 MB)/256 Mb (32 MB)/
128 Mb (16 MB), 1.8V/3.0V
HyperFlash™ Family
Features
■
3.0V I/O, 11 bus signals
❐
Single ended clock
1.8V I/O, 12 bus signals
❐
Differential clock (CK, CK#)
Chip Select (CS#)
8-bit data bus (DQ[7:0])
Read-Write Data Strobe (RWDS)
❐
HyperFlash™ memories use RWDS only as a Read Data
Strobe
Up to 333 MBps sustained read throughput
Double-Data Rate (DDR) – two data transfers per clock
166-MHz clock rate (333 MBps) at 1.8V V
CC
100-MHz clock rate (200 MBps) at 3.0V V
CC
96-ns initial random read access time
❐
Initial random access read latency: five to 16 clock cycles
Sequential burst transactions
■
■
■
■
■
■
■
■
■
■
■
Configurable Burst Characteristics
❐
Wrapped burst lengths:
• 16 bytes (8 clocks)
• 32 bytes (16 clocks)
• 64 bytes (32 clocks)
❐
Linear burst
❐
Hybrid option: one wrapped burst followed by linear burst
❐
Wrapped or linear burst type selected in each transaction
❐
Configurable output drive strength
Low Power Modes
❐
Active Clock Stop During Read: 12 mA, no wake-up required
❐
Standby: 25 µA (typical), no wake-up required
❐
Deep Power-Down: 8 µA (typical)
• 300 µs wake-up required
INT# output to generate external interrupt
❐
Busy to Ready Transition
❐
ECC detection
RSTO# output to generate system level power-on reset
❐
User configurable RSTO# Low period
512-byte Program Buffer
Sector Erase
❐
Uniform 256-KB sectors
❐
Optional Eight 4-KB Parameter Sectors (32 KB total)
Advanced Sector Protection
❐
Volatile and non-volatile protection methods for each sector
Separate 1024-byte one-time program array
Operating Temperature
❐
Industrial (–40°C to +85°C)
❐
Industrial Plus (–40°C to +105°C)
❐
Extended (–40°C to +125°C)
❐
Automotive, AEC-Q100 Grade 3 (–40°C to +85°C)
❐
Automotive, AEC-Q100 Grade 2 (–40°C to +105°C)
❐
Automotive, AEC-Q100 Grade 1 (–40°C to +125°C)
ISO/TS16949 and AEC Q100 Certified
Endurance
❐
100,000 program/erase cycles
Retention
❐
20 year data retention
Erase and Program Current
❐
Max Peak
100 mA
Packaging Options
❐
24-Ball FBGA
Additional Features
❐
ECC 1-bit correction, 2-bit detection
❐
CRC
Cypress Semiconductor Corporation
Document Number: 001-99198 Rev. *K
•
198 Champion Court
•
San Jose
,
CA 95134-1709
•
408-943-2600
Revised June 01, 2018
S26KL512S/S26KS512S
S26KL256S/S26KS256S
S26KL128S/S26KS128S
Performance Summary
Read Access Timings
Maximum Clock Rate at 1.8V V
CC
/V
CC
Q
Maximum Clock Rate at 3.0V V
CC
/V
CC
Q
Maximum Access Time, (t
ACC
)
Maximum CS# Access Time to First Word @ 166 MHz
Typical Program / Erase Times
Single Word Programming (2B = 16b)
Write Buffer Programming (512B = 4096b)
Sector Erase Time (256 KB = 2 Mb)
Typical Current Consumption
Burst Read (Continuous Read at 166 MHz)
Power-On Reset
Sector Erase Current
Write Buffer Programming Current
Standby (CS# = High)
Deep Power-Down (CS# = High, 85°C)
80 mA
80 mA
60 mA
60 mA
25 µA
30 µA (512 Mb)
4 µA (all other densities)
500 µs (~4 KBps)
475 µs (~1 MBps)
930 ms (~282 KBps)
166 MHz
100 MHz
96 ns
118 ns
Document Number: 001-99198 Rev. *K
Page 2 of 99
S26KL512S/S26KS512S
S26KL256S/S26KS256S
S26KL128S/S26KS128S
Contents
1.
1.1
1.2
2.
2.1
3.
4.
4.1
4.2
4.3
4.4
5.
5.1
5.2
6.
6.1
6.2
6.3
7.
7.1
7.2
8.
8.1
9.
9.1
General Description....................................................
4
DDR Center Aligned Read Strobe
Functionality (DCARS) ................................................. 6
Error Detection and Correction Functionality................ 6
Connection Diagram...................................................
9
FBGA 24-Ball 5 ´ 5 Array Footprint............................... 9
Signal Description
.................................................... 10
HyperBus Protocol
...................................................
Command / Address Bit Assignments ........................
Read Operations ........................................................
HyperFlash Read with DCARS Timing.......................
Write Operations ........................................................
11
11
12
15
16
9.2
10.
10.1
10.2
10.3
10.4
10.5
10.6
10.7
10.8
Data Retention ............................................................ 71
Electrical Specifications............................................
72
Absolute Maximum Ratings......................................... 72
Thermal Impedance .................................................... 73
Latchup Characteristics............................................... 73
Operating Ranges ....................................................... 73
DC Characteristics (CMOS Compatible) ..................... 74
Power-Up and Power-Down........................................ 77
Power-Off with Hardware Data Protection .................. 81
Power Conservation Modes ........................................ 81
Hardware Interface
Address Space Maps
................................................ 18
Flash Memory Array ................................................... 19
Device ID and CFI (ID-CFI) ASO................................ 21
Embedded Operations..............................................
Embedded Algorithm Controller (EAC).......................
Program and Erase Summary ....................................
Data Protection...........................................................
23
23
24
49
11. Timing Specifications................................................
83
11.1 AC Test Conditions ..................................................... 83
11.2 AC Characteristics....................................................... 84
12.
13.
13.1
13.2
13.3
Embedded Algorithm Performance..........................
89
Ordering Information
................................................. 90
Ordering Part Numbers ............................................... 90
Valid Combinations — Standard ................................. 91
Valid Combinations — Automotive Grade
/ AEC-Q100 ................................................................. 93
Device ID and Common Flash
Interface (ID-CFI) ASO Map
...................................... 58
Device ID and Common Flash
Interface (ID-CFI) ASO Map — Standard................... 58
Device ID and Common Flash Interface (ID-CFI)
ASO Map — Automotive Grade / AEC-Q100............. 63
Software Interface Reference
.................................. 64
Command Summary................................................... 64
Data Integrity
............................................................. 71
Endurance .................................................................. 71
14. Physical Interface
...................................................... 95
14.1 Physical Diagram ........................................................ 95
15. Document History Page
............................................ 96
Sales, Solutions, and Legal Information ...........................99
Worldwide Sales and Design Support ........................... 99
Products ........................................................................ 99
PSoC® Solutions .......................................................... 99
Cypress Developer Community ..................................... 99
Technical Support ......................................................... 99
Document Number: 001-99198 Rev. *K
Page 3 of 99
S26KL512S/S26KS512S
S26KL256S/S26KS256S
S26KL128S/S26KS128S
1.
General Description
The Cypress HyperFlash family of products are high-speed CMOS, MirrorBit
NOR flash devices with the HyperBus low signal
count DDR interface, that achieves high speed read throughput. The DDR protocol transfers two data bytes per clock cycle on the
data (DQ) signals. A read or write access for the HyperFlash consists of a series of 16-bit wide, one clock cycle data transfers at the
internal HyperFlash core and two corresponding 8-bit wide, one-half-clock-cycle data transfers on the DQ signals.
Both data and command/address information are transferred in DDR fashion over the 8-bit data bus. The clock input signals are
used for signal capture by the HyperFlash device when receiving command/address/data information on the DQ signals. The Read
Data Strobe (RWDS) is an output from the HyperFlash device that indicates when data is being transferred from the memory to the
host. RWDS is referenced to the rising and falling edges of CK during the data transfer portion of read operations.
Command/address/write-data values are center aligned with the clock edges and read-data values are edge aligned with the
transitions of RWDS.
Read and write operations to the HyperFlash device are burst oriented. Read transactions can be specified to use either a wrapped
or linear burst. During wrapped operation, accesses start at a selected location and continue for a configured number of locations in
a group wrap sequence. During linear operation accesses start at a selected location and continue in a sequential manner until the
read operation is terminated, when CS# returns High. Write transactions transfer one or more16-bit values.
Figure 1. Logic Block Diagram
Mandatory Signals
CS#
CK
CK#
DQ[7:0]
RWDS
Optional Signals
C
O
M
M
A
N
D
D
E
C
O
D
E
R
CONTROL
LOGIC
X
ADDR
RESET#
RSTO#
INT#
PSC
PSC#
X
X
X
X
D
D
D E
D E
E
E CC
C D
CD
D
D EE
E
E RR
R S
R S
S
S
Memory
Memory
Memory
Array
MIRRORBIT
Array
Array
MEMORY ARRAY
Sense Amplifiers
Sense Amplifiers
Sense Amplifiers
SENSE AMPLIFIERS
Y DECODERS
Data Latch
ADDRESS
REGISTER
RWDS
GENERATOR
Y
ADDR
The HyperFlash family consists of multiple densities, 1.8V/3.0V core and I/O, non-volatile, synchronous flash memory devices.
These devices have an 8-bit (1-byte) wide DDR data bus and use only word-wide (16-bit data) address boundaries. Read operations
provide 16 bits of data during each clock cycle (8 bits on each clock edge). Write operations take 16 bits of data from each clock
cycle (8 bits on each clock edge).
Each random read accesses a 32-byte length and aligned set of data called a page. Each page consists of a pair of 16-byte aligned
groups of array data called half-pages. Half-pages are aligned on 16-byte address boundaries. A read access requires two clock
cycles to define the target half-page address and the burst type, then an additional initial latency. During the initial latency period the
third clock cycle will specify the starting address within the target half-page. After the initial data value has been output, additional
data can be read from the Page on subsequent clock cycles in either a wrapped or linear manner. When configured in linear burst
mode, while a page is being burst out, the device will automatically fetch the next sequential page from the MirrorBit flash memory
array. This simultaneous burst output while fetching from the array allows for a linear sequential burst operation that can provide a
sustained output of 333 MBps data rate [1-byte
(8-bit data bus) * 2 (Data on both clock edges) * 166 MHz = 333 MBps].
Document Number: 001-99198 Rev. *K
Page 4 of 99
S26KL512S/S26KS512S
S26KL256S/S26KS256S
S26KL128S/S26KS128S
Table 1. S26KS Address Map
Type
Word Address within a half-page (16 byte)
Word Address within Write Buffer Line (512 byte)
Half-pages (16 bytes) within Erase Sector (256 KB)
Write Buffer Lines (512 bytes) within Erase Sector (256 KB)
Total Number of Erase Sectors (256 KB)
Count
8 (word addresses)
256 (word addresses)
8192 (half-pages)
512 (lines)
256 (512 Mb)
128 (256 Mb)
64 (128 Mb)
Addresses
A2 – A0
A7 – A0
A16 – A3
A16 – A8
Amax – A17
Notes
16 bytes
512 bytes
The device control logic is subdivided into two parallel operating sections: the Host Interface Controller (HIC) and the Embedded
Algorithm Controller (EAC). The HIC monitors signal levels on the device inputs and drives outputs as needed to complete read and
write data transfers with the host system (HyperFlash master). The HIC delivers data from the currently entered address map on
read transfers; places write transfer address and data information into the EAC command memory; notifies the EAC of power
transition, and write transfers. The EAC looks in the command memory, after a write transfer, for legal command sequences and
performs the related Embedded Algorithms.
Changing the non-volatile data in the memory array requires a complex sequence of operations that are called Embedded
Algorithms (EA). The algorithms are managed entirely by the internal EAC. The main algorithms perform programming and erase of
the main flash array data. The host system writes command codes to the flash device address space. The EAC receives the
command, performs all the necessary steps to complete the command, and provides status information during the progress of an
EA.
The erased state of each memory bit is a logic ‘1’. Programming changes a logic ‘1’ (High) to a logic ‘0’ (Low). Only an erase
operation is able to change a ‘0’ to a ‘1’. An erase operation must be performed on an entire 256-KB (or 4-KB for parameter sectors)
aligned group of data called a Sector. When shipped from Cypress, all Sectors are erased.
Programming is done via a 512-byte Write Buffer. It is possible to write from one to 256 words, anywhere within the Write Buffer
before starting a programming operation. Within the flash memory array, each 512-byte aligned group of data is called a Line. A
programming operation transfers data from the volatile Write Buffer to a non-volatile memory array Line. The operation is called
Write Buffer Programming.
The Write Buffer is filled with 1s after reset or the completion of any operation using the Write Buffer. Any locations not written to a ‘0’
by a Write to Buffer command are by default still filled with 1s. Any 1s in the Write Buffer do not affect data in the memory array
during a programming operation.
In addition to the mandatory signals (CS#, CK, CK#, DQ [7:0], RWDS) dedicated to the HyperBus, the device also includes optional
signals (RESET#, INT#, RSTO#, and Phase Shifted clocks PSC/PSC#).
When RESET# transitions from Low to High the device returns to the default state that occurs after an internal Power-On Reset
(POR).
The INT# output can provide an interrupt to the HyperFlash master to indicate when the HyperFlash transitions from busy to ready at
the end of a program or erase operation.
The RSTO# is an open-drain output used to indicate when a POR is occurring within the device and can be used as a system level
reset signal. Upon completion of the internal POR, the RSTO# signal will transition from Low to High impedance after a user defined
timeout period has expired. Upon transition to the high impedance state, the external pull-up resistance will pull RSTO# High and the
device immediately is placed into the Standby state.
PSC/PSC# are differential Phase Shifted Clock inputs used as a reference for RWDS edges instead of CK/CK#. Refer to
Section 1.1
DDR Center Aligned Read Strobe Functionality (DCARS) on page 6
for more details.
Document Number: 001-99198 Rev. *K
Page 5 of 99
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