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A2P75S12M3-F

Description
IGBT module ACEPACK 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC
Categorysemiconductor    Discrete semiconductor    The transistor    IGBT module   
File Size846KB,15 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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A2P75S12M3-F Overview

IGBT module ACEPACK 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC

A2P75S12M3-F Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
Product CategoryIGBT module
technologySi
productIGBT Silicon Modules
ConfigurationSixpack
Collector-emitter maximum voltage VCEO1200 V
Collector-emitter saturation voltage1.95 V
Continuous collector current at 25 C75 A
Gate-emitter leakage current500 nA
Pd-power dissipation454.5 W
Package/boxACEPACK2
Minimum operating temperature- 40 C
Maximum operating temperature+ 150 C
seriesA2P75S12M3-F
Installation stylePress Fit
Gate/emitter maximum voltage20 V
Factory packaging quantity18
A2P75S12M3-F
Datasheet
ACEPACK™ 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT
M series, soft diode and NTC
Features
ACEPACK™ 2 power module
DBC Cu Al
2
O
3
Cu
Sixpack topology
1200 V, 75 A IGBTs and diodes
Soft and fast recovery diode
Integrated NTC
ACEPACK™ 2
Applications
Inverters
Industrial
Motor drives
Description
This power module is a sixpack topology in an ACEPACK™ 2 package with NTC,
integrating the advanced trench gate field-stop technologies from
STMicroelectronics. This new IGBT technology represents the best compromise
between conduction and switching loss, to maximize the efficiency of any converter
system up to 20 kHz.
Product status
A2P75S12M3-F
Product summary
Order code
Marking
Package
Leads type
A2P75S12M3-F
A2P75S12M3-F
ACEPACK™ 2
Press fit contact pins
DS11656
-
Rev 4
-
March 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
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