HITAG µ
ISO 18000 transponder IC
Rev. 3.0 — 18 March 2010
184430
Product data sheet
PUBLIC
1. General description
The HITAG product line is well known and established in the contactless identification
market.
Due to the open marketing strategy of NXP Semiconductors there are various
manufacturers well established for both the transponders/cards as well as the read/write
devices. All of them supporting HITAG 1, HITAG 2 and HITAG S transponder ICs.
With the new HITAG µ family, this existing infrastructure is extended with the next
generation of ICs being substantially smaller in mechanical size, lower in cost, offering
more operation distance and speed, but still being operated with the same reader
infrastructure and transponder manufacturing equipment.
The protocol and command structure for HITAG µ ISO 18000 is design to support Reader
Talks First (RTF) operation, including anti-collision algorithm.
2. Features and benefits
2.1 Features
Integrated circuit for contactless identification transponders and cards
Integrated resonance capacitor of 210 pF with
±
3% tolerance or 280 pF with
±
5%
tolerance over full production
Frequency range 100 kHz to 150 kHz
2.2 Protocol
Modulation read/write device
→
transponder: 100 % ASK and binary pulse length
coding
Modulation transponder
→
read/write device: Strong ASK modulation with
anti-collision, Manchester coding
Fast anti-collision protocol
Data integrity check (CRC)
Reader Talks First (RTF) Mode
Data rate read/write device to transponder: 5.2 kbit/s
Data rates transponder to read/write device: 4 kbit/s
NXP Semiconductors
HITAG µ
ISO 18000 transponder IC
2.3 Memory
1760 bit
Up to 10 000 erase/write cycles
10 years non-volatile data retention
Memory Lock functionality
32-bit password feature
2.4 Supported standards
Full compliant to ISO 18000-2
2.5 Security features
48-bit Unique Item Identification (UII)
2.6 Delivery types
Sawn, gold-bumped 8” wafer
HVSON2
SOT-1122
3. Applications
Industrial applications
Casino gambling
4. Ordering information
Table 1.
Ordering information
Package
Name
HTMS1301FUG/AM
HTMS8301FUG/AM
HTMS1301FTB/AF
HTMS8301FTB/AF
HTMS1301FTK/AF
Wafer
Wafer
XSON3
XSON3
HVSON2
Description
Type
Version
-
-
SOT1122
SOT1122
SOT899-1
sawn, megabumped wafer, 150 µm, 8 inch, UV HITAG
μ
ISO 18000,
210pF
sawn, megabumped wafer, 150 µm, 8 inch, UV HITAG
μ
ISO 18000,
280pF
plastic extremely thin small outline package; no HITAG
μ
ISO 18000,
leads; 4 terminals; body 1 x 1.45 x 0.5 mm
210pF
plastic extremely thin small outline package; no HITAG
μ
ISO 18000,
leads; 4 terminals; body 1 x 1.45 x 0.5 mm
280pF
plastic thermal enhanced very thin small outline HITAG
μ
ISO 18000,
package; no leads; 2 terminals; body 3 x 2 x
210pF
0.85 mm
plastic thermal enhanced very thin small outline HITAG
μ
ISO 18000,
package; no leads; 2 terminals; body 3 x 2 x
280pF
0.85 mm
Type number
HTMS8301FTK/AF
HVSON2
SOT899-1
184430
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3.0 — 18 March 2010
184430
2 of 44
NXP Semiconductors
HITAG µ
ISO 18000 transponder IC
5. Block diagram
The HITAG µ ISO 18000 transponder IC require no external power supply. The
contactless interface generates the power supply and the system clock via the resonant
circuitry by inductive coupling to the read/write device (RWD). The interface also
demodulates data transmitted from the RWD to the HITAG µ ISO 18000 transponder IC,
and modulates the magnetic field for data transmission from the HITAG µ ISO 18000
transponder IC to the RWD.
Data are stored in a non-volatile memory (EEPROM). The EEPROM has a capacity of
1760 bit and is organized in blocks.
ANALOGUE
RF INTERFACE
VREG
PAD
VDD
DIGITAL CONTROL
EEPROM
ANTICOLLISION
RECT
DEMOD
data
in
READ/WRITE
CONTROL
TRANSPONDER
Cres
MOD
data
out
ACCESS CONTROL
EEPROM INTERFACE
CONTROL
CLK
PAD
clock
RF INTERFACE
CONTROL
R/W
SEQUENCER
CHARGE PUMP
001aai334
Fig 1.
Block diagram of HITAG µ ISO 18000 transponder IC
184430
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3.0 — 18 March 2010
184430
3 of 44
NXP Semiconductors
HITAG µ
ISO 18000 transponder IC
6. Pinning information
(4)
(4)
(3)
(2)
(5)
(1)
(1)
(Y)
LA
LB
(6)
(6)
(X)
001aaj823
Fig 2.
Table 2.
HITAG µ ISO 1800 - Mega bumps bondpad locations
HITAG µ ISO 18000 - Mega bumps dimensions
Dimension
550 µm
550 µm
100.5 µm
48.708 µm
180.5 µm
55.5 µm
48.508 µm
165.5 µm
294 x 164 µm
60 x 60 µm
Description
(X) chip size
(Y) chip size
(1) pad center to chip edge
(2) pad center to chip edge
(3) pad center to chip edge
(4) pad center to chip edge
(5) pad center to chip edge
(6) pad center to chip edge
Bump Size:
LA, LB
Remaining pads
Note:
All pads except LA and LB are electrically disconnected after dicing.
184430
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3.0 — 18 March 2010
184430
4 of 44
NXP Semiconductors
HITAG µ
ISO 18000 transponder IC
7. Mechanical specification
7.1 Wafer specification
See
Ref. 2 “General specification for 8” wafer on UV-tape with electronic fail die marking”.
7.1.1 Wafer
•
Designation:
•
•
•
•
•
Diameter:
Thickness:
Process:
Batch size:
PGDW:
each wafer is scribed with batch number and
wafer number
200 mm (8”)
150
μm
± 15
μm
CMOS 0.14 µm
25 wafers
91981
7.1.2 Wafer backside
•
Material:
•
Treatment:
•
Roughness:
7.1.3 Chip dimensions
Si
ground and stress release
R
a
max. 0.5
μm,
R
t
max. 5
μm
•
Die size without scribe:
•
Scribe line width:
X-dimension:
Y-dimension:
550
μm
x 550
μm
= 302500
μm
2
15
μm
(scribe line width is measured between
nitride edges)
15
μm
(scribe line width is measured between
nitride edges)
5
•
Number of pads:
7.1.4 Passivation on front
•
Type:
•
Material:
•
Thickness:
sandwich structure
PE-Nitride (on top)
1.75
μm
total thickness of passivation
184430
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
PUBLIC
Rev. 3.0 — 18 March 2010
184430
5 of 44
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