Type
IPP039N04L G
IPB039N04L G
OptiMOS
™
3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
• N-channel, logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPB039N04L G
IPP039N04L G
Product Summary
V
DS
R
DS(on),max
I
D
40
3.9
80
V
mΩ
A
Package
Marking
PG-TO263-3
039N04L
PG-TO220-3
039N04L
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
V
GS
=10 V,
T
C
=25 °C
V
GS
=10 V,
T
C
=100 °C
V
GS
=4.5 V,
T
C
=25 °C
V
GS
=4.5 V,
T
C
=100 °C
Pulsed drain current
2)
Avalanche current, single pulse
3)
Avalanche energy, single pulse
Gate source voltage
1)
Value
80
80
80
73
400
80
60
±20
Unit
A
I
D,pulse
I
AS
E
AS
V
GS
T
C
=25 °C
T
C
=25 °C
I
D
=80 A,
R
GS
=25
Ω
mJ
V
J-STD20 and JESD22
Rev. 1.2
page 1
2009-12-17
IPP039N04L G
IPB039N04L G
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Symbol Conditions
P
tot
T
j
,
T
stg
T
C
=25 °C
Value
94
-55 ... 175
55/175/56
Unit
W
°C
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Thermal characteristics
Thermal resistance, junction - case
SMD version, device on PCB
R
thJC
R
thJA
minimal footprint
6 cm² cooling area
4)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=45 µA
V
DS
=40 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=40 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
5)
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=80 A
V
GS
=10 V,
I
D
=80 A
Gate resistance
Transconductance
2)
3)
4)
-
-
-
-
-
-
1.6
62
40
K/W
40
1.2
-
-
-
0.1
-
2
1
V
µA
-
-
-
-
-
10
10
4.2
3.1
1.6
151
100
100
5.2
3.9
-
-
Ω
S
nA
mΩ
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=80 A
75
See figure 3 for more detailed information
See figure 13 for more detailed information
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Measured from drain tab to source pin
5)
Rev. 1.2
page 2
2009-12-17
IPP039N04L G
IPB039N04L G
Parameter
Symbol Conditions
min.
Values
typ.
max.
Unit
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
6)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g
V
DD
=20 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
V
DS
=0.1 V,
V
GS
=0 to 10 V
V
DD
=20 V,
V
GS
=0 V
V
DD
=20 V,
I
D
=30 A,
V
GS
=0 to 10 V
-
-
-
-
-
-
-
14
7.4
6.1
13
59
3.0
28
-
-
-
-
78
-
38
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=20 V,
V
GS
=10 V,
I
D
=30 A,
R
G
=1.6
Ω
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
-
-
-
-
-
-
-
4600
820
39
10
5.4
38
6.0
6100
1100
-
-
-
-
-
ns
pF
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Q
g(sync)
Q
oss
-
-
55
42
-
-
I
S
I
S,pulse
V
SD
T
C
=25 °C
V
GS
=0 V,
I
F
=80 A,
T
j
=25 °C
V
R
=20 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
-
-
0.92
78
400
1.2
A
V
Reverse recovery charge
6)
Q
rr
-
50
-
nC
See figure 16 for gate charge parameter definition
Rev. 1.2
page 3
2009-12-17
IPP039N04L G
IPB039N04L G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
100
100
80
80
60
60
P
tot
[W]
40
I
D
[A]
40
20
20
0
0
50
100
150
200
0
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
limited by on-state
resistance
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
1 µs
10 µs
10
2
DC
100 µs
10
0
0.5
0.2
1 ms
Z
thJC
[K/W]
I
D
[A]
0.1
10
1
10 ms
10
-1
0.05
0.02
0.01
10
0
10
-2
single pulse
10
-1
10
-1
10
0
10
1
10
2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.2
page 4
2009-12-17
IPP039N04L G
IPB039N04L G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
250
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
7
10 V
5V
6
3.5 V
200
4.5 V
4V
4V
5
4.5 V
150
R
DS(on)
[m
Ω
]
4
5V
I
D
[A]
100
3.5 V
3
10 V
2
50
3.2 V
3V
2.8 V
1
0
0
1
2
3
0
0
40
80
120
160
200
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
250
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
200
200
160
150
120
100
g
fs
[S]
80
50
175 °C
25 °C
I
D
[A]
40
0
0
1
2
3
4
5
0
0
20
40
60
80
100
V
GS
[V]
I
D
[A]
Rev. 1.2
page 5
2009-12-17
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