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24AA515-I/SM

Description
Electrically Erasable Programmable Read Only Memory 64kx8 64B - 1.8V
Categorystorage    storage   
File Size184KB,23 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
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24AA515-I/SM Overview

Electrically Erasable Programmable Read Only Memory 64kx8 64B - 1.8V

24AA515-I/SM Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeSOIC
package instructionSOP, SOP8,.3
Contacts8
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time13 weeks
Maximum clock frequency (fCLK)0.4 MHz
Data retention time - minimum200
Durability100000 Write/Erase Cycles
I2C control byte1010MDDR
JESD-30 codeR-PDSO-G8
JESD-609 codee3
length5.245 mm
memory density524288 bit
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals8
word count65536 words
character code64000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize64KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.3
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
power supply2/5 V
Certification statusNot Qualified
Maximum seat height2.03 mm
Serial bus typeI2C
Maximum standby current0.000005 A
Maximum slew rate0.003 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)1.8 V
Nominal supply voltage (Vsup)2.5 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
width5.23 mm
Maximum write cycle time (tWC)5 ms
write protectHARDWARE
Base Number Matches1
24AA515/24LC515/24FC515
512K I
2
C
CMOS Serial EEPROM
Device Selection Table
Part
Number
24AA515
24LC515
24FC515
Package Type
Temp
Ranges
I
I
I
PDIP
A0
A1
A2
V
SS
1
8
V
CC
WP
SCL
SDA
V
CC
Range
1.8-5.5V
2.5-5.5V
2.5-5.5V
Max Clock
Frequency
400 kHz
400 kHz
1 MHz
24AA515/
2
3
4
7
6
5
100 kHz for V
CC
< 2.5V.
SOIC
A0
A1
A2
V
SS
1
8
V
CC
WP
SCL
SDA
Features
• Low-power CMOS technology
- Maximum write current 3 mA at 5.5V
- Maximum read current 400
µA
at 5.5V
- Standby current 100 nA typical at 5.5V
• 2-wire serial interface bus, I
2
C
compatible
• Cascadable for up to four devices
• Self-timed ERASE/WRITE cycle
• 64-byte Page Write mode available
• 5 ms max write cycle time
• Hardware write-protect for entire array
• Output slope control to eliminate ground bounce
• Schmitt Trigger inputs for noise suppression
• 100,000 erase/write cycles
• Electrostatic discharge protection > 4000V
• Data retention > 200 years
• 8-pin PDIP, SOIC packages
• Temperature ranges:
- Industrial (I):
-40°C to +85°C
24AA515/
2
3
4
7
6
5
Block Diagram
A0 A1
WP
HV Generator
I/O
Control
Logic
Memory
Control
Logic
XDEC
EEPROM
Array
Page Latches
I/O
SCL
YDEC
Description
The Microchip Technology Inc. 24AA515/24LC515/
24FC515 (24XX515*) is a 64K x 8 (512K bit) Serial
Electrically Erasable PROM, capable of operation
across a broad voltage range (1.8V to 5.5V). It has
been developed for advanced, low power applications
such as personal communications or data acquisition.
This device has both byte write and page write capabil-
ity of up to 64 bytes of data. This device is capable of
both random and sequential reads. Reads may be
sequential within address boundaries 0000h to 7FFFh
& 8000h to FFFFh. Functional address lines allow up to
four devices on the same data bus. This allows for up
to 2 Mbits total system EEPROM memory. This device
is available in the standard 8-pin plastic DIP and SOIC
packages.
SDA
V
CC
V
SS
Sense AMP
R/W Control
24XX515 is used in this document as a generic part number
for the 24AA515/24LC515/24FC515 devices.
2003 Microchip Technology Inc.
Preliminary
DS21673C-page 1

24AA515-I/SM Related Products

24AA515-I/SM 24FC515-I-P 24AA515T-I-SM 24FC515-I/SM 24LC515-I/P
Description Electrically Erasable Programmable Read Only Memory 64kx8 64B - 1.8V EEPROM 64kx8 64B 1.8V HISpd EEPROM 64kx8 64B - 1.8V Electrically erasable programmable read-only memory 64kx8 64B 1.8V HISpd Electrically Erasable Programmable Read Only Memory 64kx8 64B - 2.5V
Is it lead-free? Lead free - - Lead free Lead free
Is it Rohs certified? conform to - - conform to conform to
Parts packaging code SOIC - - SOIC DIP
package instruction SOP, SOP8,.3 - - SOP, SOP8,.3 DIP, DIP8,.3
Contacts 8 - - 8 8
Reach Compliance Code compliant - - compliant compliant
ECCN code EAR99 - - EAR99 EAR99
Factory Lead Time 13 weeks - - 13 weeks 13 weeks
Maximum clock frequency (fCLK) 0.4 MHz - - 1 MHz 0.4 MHz
Data retention time - minimum 200 - - 200 200
Durability 100000 Write/Erase Cycles - - 100000 Write/Erase Cycles 100000 Write/Erase Cycles
I2C control byte 1010MDDR - - 1010MDDR 1010MDDR
JESD-30 code R-PDSO-G8 - - R-PDSO-G8 R-PDIP-T8
JESD-609 code e3 - - e3 e3
length 5.245 mm - - 5.245 mm 9.27 mm
memory density 524288 bit - - 524288 bit 524288 bit
Memory IC Type EEPROM - - EEPROM EEPROM
memory width 8 - - 8 8
Number of functions 1 - - 1 1
Number of terminals 8 - - 8 8
word count 65536 words - - 65536 words 65536 words
character code 64000 - - 64000 64000
Operating mode SYNCHRONOUS - - SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C - - 85 °C 85 °C
Minimum operating temperature -40 °C - - -40 °C -40 °C
organize 64KX8 - - 64KX8 64KX8
Package body material PLASTIC/EPOXY - - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code SOP - - SOP DIP
Encapsulate equivalent code SOP8,.3 - - SOP8,.3 DIP8,.3
Package shape RECTANGULAR - - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - - SMALL OUTLINE IN-LINE
Parallel/Serial SERIAL - - SERIAL SERIAL
Peak Reflow Temperature (Celsius) 260 - - NOT SPECIFIED NOT APPLICABLE
power supply 2/5 V - - 3/5 V 3/5 V
Certification status Not Qualified - - Not Qualified Not Qualified
Maximum seat height 2.03 mm - - 2.03 mm 5.334 mm
Serial bus type I2C - - I2C I2C
Maximum standby current 0.000005 A - - 0.000005 A 0.000005 A
Maximum slew rate 0.003 mA - - 0.003 mA 0.003 mA
Maximum supply voltage (Vsup) 5.5 V - - 5.5 V 5.5 V
Minimum supply voltage (Vsup) 1.8 V - - 2.5 V 2.5 V
Nominal supply voltage (Vsup) 2.5 V - - 4.5 V 4.5 V
surface mount YES - - YES NO
technology CMOS - - CMOS CMOS
Temperature level INDUSTRIAL - - INDUSTRIAL INDUSTRIAL
Terminal surface Matte Tin (Sn) - - Matte Tin (Sn) Matte Tin (Sn)
Terminal form GULL WING - - GULL WING THROUGH-HOLE
Terminal pitch 1.27 mm - - 1.27 mm 2.54 mm
Terminal location DUAL - - DUAL DUAL
Maximum time at peak reflow temperature 40 - - NOT SPECIFIED NOT APPLICABLE
width 5.23 mm - - 5.23 mm 7.62 mm
Maximum write cycle time (tWC) 5 ms - - 5 ms 5 ms
write protect HARDWARE - - HARDWARE HARDWARE
Base Number Matches 1 - - 1 1
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