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SST26WF040BT-104I/MF

Description
NOR Flash 4Mb SQI Flash Memory 1.8V 8 TDFN
Categorystorage    storage   
File Size3MB,97 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
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SST26WF040BT-104I/MF Overview

NOR Flash 4Mb SQI Flash Memory 1.8V 8 TDFN

SST26WF040BT-104I/MF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrochip
package instructionWDFN-8
Reach Compliance Codecompliant
Factory Lead Time13 weeks
Maximum clock frequency (fCLK)104 MHz
JESD-30 codeR-PDSO-N8
JESD-609 codee3
length6 mm
memory density4194304 bit
Memory IC TypeFLASH
memory width1
Number of functions1
Number of terminals8
word count4194304 words
character code4000000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX1
Package body materialPLASTIC/EPOXY
encapsulated codeHVSON
Package shapeRECTANGULAR
Package formSMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)260
Programming voltage1.8 V
Filter levelTS 16949
Maximum seat height0.8 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
width5 mm
SST26WF040B/040BA
SST26WF080B/080BA
1.8V 4 Mbit and 8 Mbit Serial Quad I/O (SQI) Flash Memory
Features
• Single Voltage Read and Write Operations
- 1.65-1.95V
• Serial Interface Architecture
- Mode 0 and Mode 3
- Nibble-wide multiplexed I/O’s with SPI-like serial
command structure
- x1/x2/x4 Serial Peripheral Interface (SPI) Protocol
• High Speed Clock Frequency
- 104 MHz max
• Burst Modes
- Continuous linear burst
- 8/16/32/64 Byte linear burst with wrap-around
• Superior Reliability
- Endurance: 100,000 Cycles (min)
- Greater than 100 years Data Retention
• Low Power Consumption:
- Active Read current: 15 mA (typical @ 104 MHz)
- Standby current: 10 µA (typical)
- Deep Power-Down current: 1.8 µA (typical)
• Fast Erase Time
- Sector/Block Erase: 18 ms (typ), 25 ms (max)
- Chip Erase: 35 ms (typ), 50 ms (max)
• Page-Program
- 256 Bytes per page in x1 or x4 mode
• End-of-Write Detection
- Software polling the BUSY bit in status register
• Flexible Erase Capability
- Uniform 4 KByte sectors
- Four 8 KByte top and bottom parameter overlay
blocks
- One 32 KByte top and bottom overlay block
- Uniform 64 KByte overlay blocks
• Write-Suspend
- Suspend Program or Erase operation to access
another block/sector
• Software Reset (RST) mode
• Software Write Protection
- Individual-Block Write Protection with permanent
lock-down capability
- 64 KByte blocks, two 32 KByte blocks, and
eight 8 KByte parameter blocks
- Read Protection on top and bottom 8 KByte
parameter blocks
• Security ID
- One-Time Programmable (OTP) 2 KByte,
Secure ID
- 64 bit unique, factory pre-programmed identifier
- User-programmable area
• Temperature Range
- Industrial: -40°C to +85°C
• Packages Available
- 8-contact WDFN (6mm x 5mm)
- 8-lead SOIC (150 mil)
- 8-contact USON (2mm x 3mm)
- 8-ball XFBGA (Z-Scale™)
• All devices are RoHS compliant
Product Description
The Serial Quad I/O™ (SQI™) family of flash-memory
devices features a six-wire, 4-bit I/O interface that allows for
low-power, high-performance operation in a low pin-count
package. SST26WF040B/040BA and SST26WF080B/
080BA also support full command-set compatibility to tradi-
tional Serial Peripheral Interface (SPI) protocol. System
designs using SQI flash devices occupy less board space
and ultimately lower system costs.
All members of the 26 Series, SQI family are manufactured
with proprietary, high-performance CMOS SuperFlash®
technology. The split-gate cell design and thick-oxide tun-
neling injector attain better reliability and manufacturability
compared with alternate approaches.
The SST26WF040B/040BA and SST26WF080B/
080BA significantly improves performance and reliabil-
ity, while lowering power consumption. This device
writes (Program or Erase) with a single power supply of
1.65-1.95V. The total energy consumed is a function of
the applied voltage, current, and time of application.
Since for any given voltage range, the SuperFlash
technology uses less current to program and has a
shorter erase time, the total energy consumed during
any Erase or Program operation is less than alternative
flash memory technologies.
SST26WF040B/040BA and SST26WF080B/080BA is
offered in 8-contact WDFN (6 mm x 5 mm), 8-lead SOIC
(150 mil), 8-contact USON, and 8-ball XFBGA (Z-Scale™)
packages. See
Figure 2-1
for pin assignments.
Two configurations are available upon order:
SST26WF040B and SST26WF080B default at power-
up has the WP# and Hold# pins enabled and
SST26WF040BA and SST26WF080BA default at
power-up has the WP# and Hold# pins disabled.
2014-2017 Microchip Technology Inc.
DS20005283C-page 1

SST26WF040BT-104I/MF Related Products

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Description NOR Flash 4Mb SQI Flash Memory 1.8V 8 TDFN NOR Flash 4Mb SQI Flash Memory 1.8V 8 CSP NOR Flash 4Mb SQI Flash Memory 1.8V 8 TDFN NOR Flash 4Mb SQI Flash Memory 1.8V 8 TDFN NOR Flash 4Mb SQI Flash Memory 1.8V 8 TDFN NOR Flash 4Mb SQI Flash Memory 1.8V 8 USON NOR Flash 4Mb SQI Flash Memory 1.8V 8 TDFN NOR Flash 4Mb SQI Flash Memory 1.8V 8 TDFN NOR Flash 4Mb SQI Flash Memory 1.8V 8 SOIC NOR Flash 4Mb SQI Flash Memory 1.8V 8 SOIC
Maker Microchip Microchip Microchip Microchip Microchip Microchip Microchip Microchip Microchip Microchip
Is it Rohs certified? conform to - conform to - conform to - conform to - conform to conform to
package instruction WDFN-8 - WDFN-8 - WDFN-8 - WDFN-8 - SOIC-8 SOIC-8
Reach Compliance Code compliant - compliant - compliant - compliant - compliant compliant
Factory Lead Time 13 weeks - 13 weeks - 13 weeks - 13 weeks - 16 weeks 16 weeks
Maximum clock frequency (fCLK) 104 MHz - 104 MHz - 104 MHz - 104 MHz - 104 MHz 104 MHz
JESD-30 code R-PDSO-N8 - R-PDSO-N8 - R-PDSO-N8 - R-PDSO-N8 - R-PDSO-G8 R-PDSO-G8
JESD-609 code e3 - e3 - e3 - e3 - e3 e3
length 6 mm - 6 mm - 6 mm - 6 mm - 4.9 mm 4.9 mm
memory density 4194304 bit - 4194304 bit - 4194304 bit - 83886080 bit - 4194304 bit 4194304 bit
Memory IC Type FLASH - FLASH - FLASH - FLASH - FLASH FLASH
memory width 1 - 1 - 1 - 1 - 1 1
Number of functions 1 - 1 - 1 - 1 - 1 1
Number of terminals 8 - 8 - 8 - 8 - 8 8
word count 4194304 words - 4194304 words - 4194304 words - 83886080 words - 4194304 words 4194304 words
character code 4000000 - 4000000 - 4000000 - 80000000 - 4000000 4000000
Operating mode SYNCHRONOUS - SYNCHRONOUS - SYNCHRONOUS - SYNCHRONOUS - SYNCHRONOUS SYNCHRONOUS
Maximum operating temperature 85 °C - 85 °C - 85 °C - 85 °C - 85 °C 85 °C
Minimum operating temperature -40 °C - -40 °C - -40 °C - -40 °C - -40 °C -40 °C
organize 4MX1 - 4MX1 - 4MX1 - 80MX1 - 4MX1 4MX1
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code HVSON - HVSON - HVSON - HVSON - SOP SOP
Package shape RECTANGULAR - RECTANGULAR - RECTANGULAR - RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE - SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE - SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE - SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE - SMALL OUTLINE SMALL OUTLINE
Parallel/Serial SERIAL - SERIAL - SERIAL - SERIAL - SERIAL SERIAL
Peak Reflow Temperature (Celsius) 260 - 260 - 260 - 260 - 260 260
Programming voltage 1.8 V - 1.8 V - 1.8 V - 1.8 V - 1.8 V 1.8 V
Filter level TS 16949 - TS 16949 - TS 16949 - TS 16949 - TS 16949 TS 16949
Maximum seat height 0.8 mm - 0.8 mm - 0.8 mm - 0.8 mm - 1.75 mm 1.75 mm
Maximum supply voltage (Vsup) 1.95 V - 1.95 V - 1.95 V - 1.95 V - 1.95 V 1.95 V
Minimum supply voltage (Vsup) 1.65 V - 1.65 V - 1.65 V - 1.65 V - 1.65 V 1.65 V
Nominal supply voltage (Vsup) 1.8 V - 1.8 V - 1.8 V - 1.8 V - 1.8 V 1.8 V
surface mount YES - YES - YES - YES - YES YES
technology CMOS - CMOS - CMOS - CMOS - CMOS CMOS
Temperature level INDUSTRIAL - INDUSTRIAL - INDUSTRIAL - INDUSTRIAL - INDUSTRIAL INDUSTRIAL
Terminal surface Matte Tin (Sn) - annealed - Matte Tin (Sn) - annealed - Matte Tin (Sn) - annealed - Matte Tin (Sn) - annealed - Matte Tin (Sn) - annealed Matte Tin (Sn) - annealed
Terminal form NO LEAD - NO LEAD - NO LEAD - NO LEAD - GULL WING GULL WING
Terminal pitch 1.27 mm - 1.27 mm - 1.27 mm - 1.27 mm - 1.27 mm 1.27 mm
Terminal location DUAL - DUAL - DUAL - DUAL - DUAL DUAL
Maximum time at peak reflow temperature 30 - 30 - 30 - 30 - 30 40
width 5 mm - 5 mm - 5 mm - 5 mm - 3.9 mm 3.9 mm
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