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BTA445Z-800BTQ

Description
Triac BTA445Z-800BT/II TO3P/STANDARD
Categorysemiconductor    Discrete semiconductor    thyristor    The bidirectional thyristor   
File Size251KB,14 Pages
ManufacturerWeEn Semiconductors
Environmental Compliance
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Triac BTA445Z-800BT/II TO3P/STANDARD

BTA445Z-800BTQ Parametric

Parameter NameAttribute value
MakerWeEn Semiconductors
Product CategoryTriac
On state RMS current - It RMS45 A
No repetitive on-state current495 A
Rated repetitive off-state voltage VDRM800 V
Off-state leakage current (at VDRM IDRM)-
On state voltage1.7 V
Maximum holding current Ih80 mA
Gate trigger voltage-Vgt0.8 V
Gate trigger current-Igt50 mA
Minimum operating temperature- 40 C
Maximum operating temperature+ 150 C
Installation styleThrough Hole
Package/boxSOT-1292-3
Factory packaging quantity450
BTA445Z-800BT
3Q Hi-Com Triac
20 July 2017
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT1292 (IITO3P) package intended
for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT"
triac will commutate the full RMS current at the maximum rated junction temperature (T
j(max)
=
150 °C) without the aid of a snubber. It is used in applications where "high junction operating
temperature capability" is required.
2. Features and benefits
High current TRIAC
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability (T
j(max)
= 150 °C)
High voltage capability
Least sensitive gate for highest noise immunity
Low thermal resistance
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Insulated tab rated at 2500 V rms
3. Applications
Applications subject to high temperature (T
j(max)
= 150 °C)
High current / high surge applications
High power / industrial controls - e.g. heating, motors, lighting
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-
state voltage
RMS on-state current
full sine wave; T
mb
≤ 105 °C;
Fig. 1;
Fig. 2; Fig. 3
Conditions
Min
-
-
-
-
-
Typ
-
-
-
-
-
Max
800
45
450
495
150
Unit
V
A
A
A
°C
non-repetitive peak on- full sine wave; T
j(init)
= 25 °C;
t
p
= 20 ms;
Fig. 4; Fig. 5
state current
full sine wave; T
j(init)
= 25 °C;
t
p
= 16.7 ms
T
j
junction temperature
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