BGA 616 E6327 datasheet, PDF - EEWORLD Datasheet

BGA 616 E6327: DescriptionRF amplifierBroadband MMIC Amplifier; Categorysemiconductor And wireless radio frequency integrated circuits Rf amplifier; File Size177KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/; Environmental Compliance

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BGA 616 E6327 Overview

RF amplifierBroadband MMIC Amplifier

Parameter Name	Attribute value
Maker	Infineon
Product Category	RF amplifier
Installation style	SMD/SMT
Package/box	SOT-343-4
type	Silicon Germanium MMIC
working frequency	0 Hz to 2.7 GHz
P1dB - compression point	18 dBm
Gain	18 dB
Working power voltage	6 V
NF—noise figure	2.6 dB
Test frequency	2 GHz
OIP3 - Third order intercept point	29 dBm
Working power current	60 mA
Minimum operating temperature	- 65 C
Maximum operating temperature	+ 150 C
Encapsulation	Cut Tape
Encapsulation	Reel
bandwidth	2700 MHz
Number of channels	1 Channel
input return loss	15 dB
Pd-power dissipation	360 mW
Factory packaging quantity	3000
unit weight	6.400 mg

Data Sheet, Rev. 2.1, Sept. 2011

BGA616

Silicon Germanium Broadband MMIC Amplifier

RF & Protection Devices

	BGA 616 E6327	BGA-616-H6327
Description	RF amplifierBroadband MMIC Amplifier	RF Amplifier RF SILICON MMIC
Product Category	RF amplifier	RF Amplifier
Gain	18 dB	18 dB

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