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BSS138N H6327

Description
MOSFET N-Ch 60V 230mA SOT-23-3
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size457KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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BSS138N H6327 Overview

MOSFET N-Ch 60V 230mA SOT-23-3

BSS138N H6327 Parametric

Parameter NameAttribute value
MakerInfineon
Product CategoryMOSFET
technologySi
Installation styleSMD/SMT
Package/boxSOT-23-3
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage60 V
Id-continuous drain current230 mA
Rds On - drain-source on-resistance2.2 Ohms
Vgs th-gate-source threshold voltage600 mV
Vgs - gate-source voltage20 V
Qg-gate charge1.4 nC
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
Pd-power dissipation360 mW
ConfigurationSingle
channel modeEnhancement
EncapsulationCut Tape
EncapsulationMouseReel
EncapsulationReel
high1.1 mm
length2.9 mm
productMOSFET Small Signal
seriesBSS138
Transistor type1 N-Channel
width1.3 mm
Forward transconductance - minimum100 mS
Fall time8.2 ns
Rise Time3 ns
Factory packaging quantity3000
Typical shutdown delay time6.7 ns
Typical switch-on delay time2.3 ns
unit weight8 mg
BSS138N
SIPMOS
®
Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
I
D
60
3.5
0.23
V
Ω
A
PG-SOT-23
Type
BSS138N
BSS138N
Parameter
Package
PG-SOT-23
PG-SOT-23
Tape and Reel
H6327: 3000
H6433: 10000
Marking
SKs
SKs
Value
0.23
0.18
0.92
Unit
A
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Continuous drain current
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.23 A,
V
DS
=48 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD sensitivity
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V
GS
JESD22-A114 (HBM)
P
tot
T
j
,
T
stg
T
A
=25 °C
±20
Class 0 (<250V)
0.36
-55 ... 150
55/150/56
V
W
°C
Rev. 2.86
page 1
2012-04-17

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BSS138N H6327 SP000919330
Description MOSFET N-Ch 60V 230mA SOT-23-3 MOSFET N-Ch 60V 230mA SOT-23-3
Maker Infineon Infineon
Minimum operating temperature - 55 C -55 °C
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