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IKW15T120 E8161

Description
IGBT transistor LOW LOSS DuoPack 1200V 15A
Categorysemiconductor    Discrete semiconductor    The transistor    IGBT transistor   
File Size507KB,15 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IKW15T120 E8161 Overview

IGBT transistor LOW LOSS DuoPack 1200V 15A

IKW15T120 E8161 Parametric

Parameter NameAttribute value
MakerInfineon
Product CategoryIGBT transistor
technologySi
Package/boxTO-247-3
Installation styleThrough Hole
ConfigurationSingle
Collector-emitter maximum voltage VCEO1200 V
Gate/emitter maximum voltage+/- 20 V
Minimum operating temperature- 40 C
Maximum operating temperature+ 150 C
seriesTRENCHSTOP
EncapsulationTube
Collector maximum continuous current Ic30 A
high20.9 mm
length15.9 mm
width5.3 mm
Factory packaging quantity240
unit weight38 g
IKW15T120
TrenchStop
®
Series
Low Loss DuoPack : IGBT in
TrenchStop
®
and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Approx. 1.0V reduced V
CE(sat)
and 0.5V reduced V
F
compared to BUP313D
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply
®
TrenchStop
and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
1
Qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
V
CE
1200V
I
C
15A
V
CE(sat),Tj=25°C
1.7V
T
j,max
150C
Marking Code
K15T120
Package
PG-TO-247-3
G
E
PG-TO-247-3
Type
IKW15T120
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25C
T
C
= 100C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
1200V,
T
j
150C
Diode forward current
T
C
= 25C
T
C
= 100C
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
Power dissipation
T
C
= 25C
Operating junction temperature
Storage temperature
T
j
T
stg
-40...+150
-55...+150
C
2)
Symbol
V
CE
I
C
Value
1200
30
15
Unit
V
A
I
Cpul s
-
I
F
45
45
30
15
I
Fpul s
V
GE
t
SC
P
tot
45
20
10
110
V
s
W
V
GE
= 15V,
V
CC
1200V,
T
j
150C
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.4 12.06.2013
IFAG IPC TD VLS

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