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D3S190N65B-U

Description
MOSFET 190 mOhm 650V Superjunction Power MOSFET in TO-220
Categorysemiconductor    Discrete semiconductor    The transistor    MOSFET   
File Size759KB,18 Pages
ManufacturerD3
Environmental Compliance
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D3S190N65B-U Overview

MOSFET 190 mOhm 650V Superjunction Power MOSFET in TO-220

D3S190N65B-U Parametric

Parameter NameAttribute value
MakerD3
Product CategoryMOSFET
technologySi
Installation styleThrough Hole
Package/boxTO-220-3
Number of channels1 Channel
Transistor polarityN-Channel
Vds - drain-source breakdown voltage650 V
Id-continuous drain current18.5 A
Rds On - drain-source on-resistance180 mOhms
Vgs th-gate-source threshold voltage2.3 V
Vgs - gate-source voltage30 V
Qg-gate charge32.6 nC
Minimum operating temperature- 55 C
Maximum operating temperature+ 150 C
Pd-power dissipation146 W
ConfigurationSingle
channel modeEnhancement
EncapsulationTube
Transistor type1 N-Channel
Fall time33 ns
Rise Time30 ns
Factory packaging quantity50
Typical shutdown delay time51 ns
Typical switch-on delay time21 ns
unit weight1.800 g
®
D3S190N65x
650V, 190mΩ, 15.2A N-Channel Enhancement Mode Super Junction Power MOSFET
Ordering Information
Part Number
D3S190N65B-U
D3S190N65E-U
D3S190N65U-U
Package Options
Package Option
TO-220
TO-263
TO-220 FullPak (FP)
TO-220
TO-263
TO-220 FullPak
Device Schematic
+FET
TM
is an advanced Super Junction Power MOSFET offering
excellent efficiency through low R
DS(ON)
and low gate
charge. +FET
TM
is a rugged device with precision charge
balance implementation designed for demanding uses such as
enterprise power computing power supplies, motor control,
lighting and other challenging power conversion applications.
Description
Drain (Pin 2, Tab)
Gate
(Pin 1)
Source
(Pin 3)
Features
LOW R
DS(ON)
FAST SWITCHING
HIGH E
AS
REL TEST SPEC: JESD-22
HTRB, H3TRB TESTED >3000 HRS
Benefits
LOW CONDUCTION LOSSES
HIGH EFFICIENCY
EXCELLENT AVALANCHE PERFORMANCE
Table 1
Key Maximum Parameters
Parameter
V
DSS
@ T
jmax
RDS(on) max
Qg typ
I
Dmax
@
25 ºC
Applications
Unit
V
mΩ
nC
A
220/263
710
< 190
28
25.8
220FP
710
<190
28
13.5
POWER FACTOR CORRECTION
SERVER POWER SUPPLIES
TELECOM POWER SUPPLIES
INVERTERS
MOTOR CONTROL
Copyright D3 Semiconductor 2017 – All Rights Reserved

D3S190N65B-U Related Products

D3S190N65B-U D3S190N65F-U
Description MOSFET 190 mOhm 650V Superjunction Power MOSFET in TO-220 MOSFET 190 mOhm 650V Superjunction Power MOSFET in TO-220 FullPak
Maker D3 D3
Product Category MOSFET MOSFET
technology Si Si
Installation style Through Hole Through Hole
Package/box TO-220-3 TO-220FP-3
Encapsulation Tube Tube
Factory packaging quantity 50 50
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