SLG59M1730C
An Ultra-small 33 mΩ, 1.0 A pFET
Integrated Power Switch with Controlled Inrush Current
General Description
Operating from a 2.5 V to 5.5 V power supply, the
SLG59M1730C is a self-powered, high-performance 33 mΩ,
1.0 A single-channel pFET integrated power switch with a
controlled V
IN
inrush current profile. The SLG59M1730C’s low
supply current and controlled V
IN
inrush current profile makes
it an ideal pFET integrated power switch in small form-factor
personal health monitor and watch applications.
Using a proprietary MOSFET design, the SLG59M1730C
achieves a low RDS
ON
across the entire input voltage range.
Through the application of Silego’s proprietary CuFET
technology, the SLG59M1730C’s can be used in applications
up to 1 A with a very-small 0.64 mm
2
WLCSP form factor.
Pin Configuration
Pin A1 Index Mark
1
2
SLG59M1730C
ON
VIN
A
GND
VOUT
B
4L WLCSP
(Laser Marking View)
Features
• Integrated 1 A Continuous I
DS
pFET Power Switch
• Low Typical RDS
ON
:
• 33 mΩ at V
IN
= 5.5 V
• 45.1 mΩ at V
IN
= 3.3 V
• 56.1 mΩ at V
IN
= 2.5 V
• Input Voltage: 2.5 V to 5.5 V
• Low Typical No-load Supply Current: 0.1 µA
• Integrated VOUT Discharge Resistor
• Operating Temperature: -40 °C to 85 °C
• Low
θ
JA
, 4-pin 0.8 mm x 0.8 mm, 0.4 mm pitch 4L WLCSP
Packaging
• Pb-Free / Halogen-Free / RoHS compliant
Block Diagram
1.0 A
VIN
C
IN
30 µF
VOUT
C
LOAD
30 µF
In-rush
Current
Limiting
ON
ON
OFF
Silego Technology, Inc.
000-0059M1730-103
Rev 1.03
Revised July 24, 2017
SLG59M1730C
Pin Description
Pin #
Pin Name
Type
Pin Description
A low-to-high transition on this pin initiates the operation of the SLG59M1730C. ON is
an asserted HIGH, level-sensitive CMOS input with V
IL
< 0.3 V and V
IH
> 0.85 V. As
the ON pin input circuit does not have an internal pull-down resistor, connect this pin
to a general-purpose output (GPO) of a microcontroller, an application processor, or a
system controller – do not allow this pin to be open-circuited. In order to activate the
SLG59M1730C’s controlled inrush current control circuitry, ON shall be toggled HIGH
only after V
IN
is higher than the SLG59M1730C’s V
SUCC(TH)
specification.
A1
ON
Input
B1
VIN
Input terminal connection of the p-channel MOSFET. Connect a 10 µF (or larger)
MOSFET low-ESR capacitor from this pin to ground. Capacitors used at VIN should be rated at
10 V or higher.
Output terminal connection of the p-channel MOSFET. For optimal operation of the
MOSFET SLG59M1730C controlled inrush current profile, connect a 30 µF (or smaller) capacitor
from this pin to ground. Capacitors used at VOUT should be rated at 10 V or higher.
GND
Ground connection. Connect this pin to system analog or power ground plane.
B2
A2
VOUT
GND
Ordering Information
Part Number
SLG59M1730C
SLG59M1730CTR
Type
WLCSP 4L
WLCSP 4L (Tape and Reel)
Production Flow
Industrial, -40
°C
to 85
°C
Industrial, -40
°C
to 85
°C
000-0059M1730-103
Page 2 of 16
SLG59M1730C
Absolute Maximum Ratings
Parameter
V
IN
V
OUT
to GND
ON to GND
T
S
ESD
HBM
ESD
CDM
MSL
θ
JA
W
DIS
Description
Power Switch Input Voltage
Power Switch Output Voltage to
GND
ON Pin Voltage to GND
Storage Temperature
ESD Protection
ESD Protection
Moisture Sensitivity Level
Package Thermal Resistance,
Junction-to-Ambient
Package Power Dissipation
Maximum pulsed switch current, pulse
width < 1 ms, 1% duty cycle
0.8 x 0.8 mm 4L WLCSP; Determined
using a 1 in
2
, 2 oz .copper pad under each
VIN and VOUT terminal and FR4 pcb
material.
--
--
--
110
--
--
Human Body Model
Charged Device Model
Conditions
Min.
--
-0.3
-0.3
-65
2000
1000
Typ.
--
--
--
--
--
--
1
--
0.5
1.5
°C/W
W
A
Max.
6
V
IN
V
IN
140
--
--
Unit
V
V
V
°C
V
V
MOSFET IDS
PK
Peak Current from VIN to VOUT
Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Electrical Characteristics
T
A
= -40 °C to 85 °C (unless otherwise stated)
Parameter
V
IN
I
IN
I
ON_LKG
RDS
ON
Description
Power Switch Input Voltage
Power Switch Current (Pin B1)
ON Pin Input Leakage
@ 5.5 V, I
DS
= 100 mA
ON Resistance @ T
A
25°C
@ 3.3 V, I
DS
= 100 mA
@ 2.5 V, I
DS
= 100 mA
@ 5.5 V, I
DS
= 100 mA
RDS
ON
ON Resistance @ T
A
85°C
@ 3.3 V, I
DS
= 100 mA
@ 2.5 V, I
DS
= 100 mA
MOSFET IDS Current from VIN to VOUT
V
SUCC(TH)
I
RISE
V
OUT(SR)
Continuous
ON
≥
V
ON_VIH
;
V
IN
Inrush Current Start-up Control
See Timing Diagram on Page 4 and
Threshold Voltage
Note 1
Rise Time Charging Current
Slew Rate
10% V
OUT
to 90% V
OUT
↑;
V
IN
= 5.0 V, C
LOAD
= 30 µF,
See Note 1
10% V
OUT
to 90% V
OUT
↑;
V
IN
= 5.0 V, C
LOAD
= 30 µF
Conditions
-40 °C to 85 °C
When OFF, V
IN
= 5.5 V
When ON, ON = V
IN
, No load
Min.
2.5
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
0.5
0.1
--
33
45.1
56.1
40.2
54.5
68.2
--
0.9 x V
IN
16.5
0.54
Max.
5.5
2
1
0.1
41
55
69
49
66
82
1.0
--
Unit
V
µA
µA
µA
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
A
V
11
0.36
25
0.8
mA
V/ms
000-0059M1730-103
Page 3 of 16
SLG59M1730C
Electrical Characteristics
(continued)
T
A
= -40 °C to 85 °C (unless otherwise stated)
Parameter
Description
Conditions
10% V
OUT
to 90% V
OUT
↑
V
IN
= 5.0 V, C
LOAD
= 30 µF,
no R
LOAD
10% V
OUT
to 90% V
OUT
↑
V
IN
= 2.5 V, C
LOAD
= 30 µF,
no R
LOAD
V
ON_VIH
to 90% V
OUT
↑
V
IN
= 5 V, C
LOAD
= 30 µF,
No R
LOAD
V
ON_VIH
to 90% V
OUT
↑
V
IN
= 2.5 V, C
LOAD
= 30 µF,
No R
LOAD
V
ON_VIL
to V
OUT
Fall, V
IN
= 5 V,
R
LOAD
=10
Ω,
no C
LOAD
C
LOAD
connected from VOUT to
GND
V
IN
= 2.5 V to 5.5 V, V
OUT
= 0.4 V
Input Bias
Min.
5
Typ.
7.6
Max.
11
Unit
ms
T
RISE
Rise Time
2.5
3.8
5.5
ms
6
8.6
12
ms
T
Total_ON
Total Turn On Time
3
--
--
53
0.85
-0.3
4.3
4.5
--
90
--
0
6
--
30
150
V
IN
0.3
ms
µs
µF
Ω
V
V
T
OFF_Delay
C
LOAD
R
DIS
ON_V
IH
ON_V
IL
OFF Delay Time
Output Load Capacitance
Discharge Resistance
Initial Turn On Voltage
Low Input Voltage on ON pin
Notes:
1. Rise of ON pin must only occur after V
IN
reaches V
SUCC(TH)
in order to have proper in-rush current limiting and start-up.
T
Total_ON
, T
ON_Delay
and Slew Rate Measurement
V
SUCC(TH)
V
IN
ON*
V
ON_VIH
T
Total_ON
V
ON_VIL
T
OFF_Delay
90% V
OUT
V
OUT
10% V
OUT
T
RISE
* V
IN
≥
90% Nominal Voltage before Asserting ON Signal
000-0059M1730-103
90% V
OUT
10% V
OUT
T
FALL
Page 4 of 16
SLG59M1730C
RDS
ON
vs. Temperature and V
IN
T
RISE
vs. C
LOAD
, Temperature, and V
IN
000-0059M1730-103
Page 5 of 16
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