AT28C010-12EM/883 datasheet, PDF

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AT28C010-12EM/883: DescriptionElectrically Erasable Programmable Read Only Memory 1M 5V SDP - 120NS 32LCC 883C; Categorystorage storage; File Size425KB，17 Pages; ManufacturerAtmel (Microchip)

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AT28C010-12EM/883 Overview

Electrically Erasable Programmable Read Only Memory 1M 5V SDP - 120NS 32LCC 883C

AT28C010-12EM/883 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Atmel (Microchip)
Parts packaging code	QFJ
package instruction	QCCN, LCC32,.45X.55
Contacts	32
Reach Compliance Code	compliant
ECCN code	3A001.A.2.C
Maximum access time	120 ns
Other features	AUTOMATIC WRITE; DATA RETENTION: 10 YEARS
command user interface	NO
Data polling	YES
Data retention time - minimum	10
Durability	10000 Write/Erase Cycles
JESD-30 code	R-CQCC-N32
JESD-609 code	e0
length	13.97 mm
memory density	1048576 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QCCN
Encapsulate equivalent code	LCC32,.45X.55
Package shape	RECTANGULAR
Package form	CHIP CARRIER
page size	128 words
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	5 V
Programming voltage	5 V
Certification status	Not Qualified
Filter level	MIL-STD-883
Maximum seat height	2.54 mm
Maximum standby current	0.0003 A
Maximum slew rate	0.08 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30
switch bit	YES
width	11.43 mm
Maximum write cycle time (tWC)	10 ms

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Features

•

Fast Read Access Time - 120 ns

•

Automatic Page Write Operation

– Internal Address and Data Latches for 128-Bytes

– Internal Control Timer

Fast Write Cycle Time

– Page Write Cycle Time - 10 ms Maximum

– 1 to 128-Byte Page Write Operation

Low Power Dissipation

– 80 mA Active Current

– 300µA CMOS Standby Current

Hardware and Software Data Protection

DATA Polling for End of Write Detection

High Reliability CMOS Technology

– Endurance: 10

or 10

Cycles

– Data Retention: 10 Years

Single 5V



10% Supply

CMOS and TTL Compatible Inputs and Outputs

JEDEC Approved Byte-Wide Pinout

•

AT28C010 Mil

•

1-Megabit

(128K x 8)

Paged Parallel

EEPROMs

AT28C010

Military

(continued)

32 LCC

Top View

A12

A15

A16

VCC

•

Pin Configuration

Pin Name

A0 - A16

I/O0 - I/O7

Function

Addresses

Chip Enable

Output Enable

Write Enable

Data Inputs/Outputs

No Connect

44 LCC

Top View

A15

A16

VCC

A14

CERDIP, FLATPACK

Top View

A16

A15

A12

I/O0

I/O1

I/O2

GND

VCC

A14

A13

A11

A10

I/O7

I/O6

I/O5

I/O4

I/O3

I/O0

I/O1

I/O2

VSS

I/O3

I/O4

I/O5

I/O6

I/O7

A12

A13

A11

A10

I/O1

I/O2

GND

I/O3

I/O4

I/O5

I/O6

I/O0

A14

A13

A11

A10

I/O7

PGA

Top View

Atmel-0010I-PEEPR-AT28C010-Datasheet_062015

Description

The AT28C010 is a high-performance Electrically Erasable and Programmable Read Only Mem-

ory. Its one megabit of memory is organized as 131,072 words by 8 bits. Manufactured with

Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 120 ns with

power dissipation of just 440 mW. When the device is deselected, the CMOS standby current is

less than 300A.

The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for

external components. The device contains a 128-byte page register to allow writing of up to 128-

bytes simultaneously. During a write cycle, the address and 1 to 128-bytes of data are internally

latched, freeing the address and data bus for other operations. Following the initiation of a write

cycle, the device will automatically write the latched data using an internal control timer. The end

of a write cycle can be detected by DATA POLLING of I/O7. Once the end of a write cycle has

been detected a new access for a read or write can begin.

Atmel's 28C010 has additional features to ensure high quality and manufacturability. The device

utilizes internal error correction for extended endurance and improved data retention character-

istics. An optional software data protection mechanism is available to guard against inadvertent

writes. The device also includes an extra 128-bytes of EEPROM for device identification or

tracking.

Block Diagram

Absolute Maximum Ratings*

Temperature Under Bias ............................... -55°C to +125°C

Storage Temperature..................................... -65°C to +150°C

All Input Voltages

(including NC Pins)

with Respect to Ground ...................................-0.6V to +6.25V

All Output Voltages

with Respect to Ground .............................-0.6V to V

+ 0.6V

Voltage on OE and A9

with Respect to Ground ...................................-0.6V to +13.5V

*NOTICE:

Stresses beyond those listed under “Absolute

Maximum Ratings” may cause permanent dam-

age to the device. This is a stress rating only and

functional operation of the device at these or any

other conditions beyond those indicated in the

operational sections of this specification is not

implied. Exposure to absolute maximum rating

conditions for extended periods may affect device

reliability.

AT28C010 Military

Atmel-0010I-PEEPR-AT28C010-Datasheet_062015

AT28C010 Military

Device Operation

READ:

The AT28C010 is accessed like a Static RAM. When CE and OE are low and WE is

high, the data stored at the memory location determined by the address pins is asserted on the

outputs. The outputs are put in the high impedance state when either CE or OE is high. This

dual-line control gives designers flexibility in preventing bus contention in their system.

BYTE WRITE:

A low pulse on the WE or CE input with CE or WE low (respectively) and OE high

initiates a write cycle. The address is latched on the falling edge of CE or WE, whichever occurs

last. The data is latched by the first rising edge of CE or WE. Once a byte write has been started

it will automatically time itself to completion. Once a programming operation has been initiated

and for the duration of t

, a read operation will effectively be a polling operation.

PAGE WRITE:

The page write operation of the AT28C010 allows 1 to 128-bytes of data to be

written into the device during a single internal programming period. A page write operation is ini-

tiated in the same manner as a byte write; the first byte written can then be followed by 1 to 127

additional bytes. Each successive byte must be written within 150s (t

BLC

) of the previous byte.

If the t

BLC

limit is exceeded the AT28C010 will cease accepting data and commence the internal

programming operation. All bytes during a page write operation must reside on the same page

as defined by the state of the A7 - A16 inputs. For each WE high to low transition during the

page write operation, A7 - A16 must be the same.

The A0 to A6 inputs are used to specify which bytes within the page are to be written. The bytes

may be loaded in any order and may be altered within the same load period. Only bytes which

are specified for writing will be written; unnecessary cycling of other bytes within the page does

not occur.

DATA POLLING:

The AT28C010 features DATA Polling to indicate the end of a write cycle.

During a byte or page write cycle an attempted read of the last byte written will result in the com-

plement of the written data to be presented on I/O7. Once the write cycle has been completed,

true data is valid on all outputs, and the next write cycle may begin. DATA Polling may begin at

anytime during the write cycle.

TOGGLE BIT:

In addition to DATA Polling the AT28C010 provides another method for determin-

ing the end of a write cycle. During the write operation, successive attempts to read data from

the device will result in I/O6 toggling between one and zero. Once the write has completed, I/O6

will stop toggling and valid data will be read. Reading the toggle bit may begin at any time during

the write cycle.

DATA PROTECTION:

If precautions are not taken, inadvertent writes may occur during transi-

tions of the host system power supply. Atmel has incorporated both hardware and software fea-

tures that will protect the memory against inadvertent writes.

HARDWARE PROTECTION:

Hardware features protect against inadvertent writes to the

AT28C010 in the following ways: (a) V

sense - if V

is below 3.8V (typical) the write function

is inhibited; (b) V

power-on delay - once V

has reached 3.8V the device will automatically

time out 5 ms (typical) before allowing a write: (c) write inhibit - holding any one of OE low, CE

high or WE high inhibits write cycles; (d) noise filter - pulses of less than 15 ns (typical) on the

WE or CE inputs will not initiate a write cycle.

SOFTWARE DATA PROTECTION:

A software controlled data protection feature has been

implemented on the AT28C010. When enabled, the software data protection (SDP), will prevent

inadvertent writes. The SDP feature may be enabled or disabled by the user; the AT28C010 is

shipped from Atmel with SDP disabled.

SDP is enabled by the host system issuing a series of three write commands; three specific

bytes of data are written to three specific addresses (refer to Software Data Protection Algo-

rithm). After writing the 3-byte command sequence and after t

the entire AT28C010 will be

protected against inadvertent write operations. It should be noted, that once protected the host

may still perform a byte or page write to the AT28C010. This is done by preceding the data to be

written by the same 3-byte command sequence used to enable SDP.

Atmel-0010I-PEEPR-AT28C010-Datasheet_062015

AT28C010-12EM/883 Related Products

	AT28C010-12EM/883	AT28C010-12FM/883-341	AT28C010-15EM/883	AT28C010E-15LM/883
Description	Electrically Erasable Programmable Read Only Memory 1M 5V SDP - 120NS 32LCC 883C	Electrically erasable programmable read-only memory 120NS, FLATPACK, 883C; LEV B COMPLIANT	Electrically Erasable Programmable Read Only Memory 1M 5V SDP - 150NS 32LCC 883C	Electrically erasable programmable read-only memory Parallel Electrically erasable programmable read-only memory 5V-150NS, 883c
Maker	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)	Atmel (Microchip)
Is it lead-free?	Contains lead	-	Contains lead	Contains lead
Is it Rohs certified?	incompatible	-	incompatible	incompatible
Parts packaging code	QFJ	-	QFJ	LCC
package instruction	QCCN, LCC32,.45X.55	-	QCCN, LCC32,.45X.55	QCCN, LCC44,.65SQ
Contacts	32	-	32	44
Reach Compliance Code	compliant	-	compliant	compliant
ECCN code	3A001.A.2.C	-	3A001.A.2.C	3A001.A.2.C
Maximum access time	120 ns	-	150 ns	150 ns
Other features	AUTOMATIC WRITE; DATA RETENTION: 10 YEARS	-	AUTOMATIC WRITE; DATA RETENTION: 10 YEARS	AUTOMATIC WRITE; DATA RETENTION: 10 YEARS
command user interface	NO	-	NO	NO
Data polling	YES	-	YES	YES
Data retention time - minimum	10	-	10	10
Durability	10000 Write/Erase Cycles	-	10000 Write/Erase Cycles	100000 Write/Erase Cycles
JESD-30 code	R-CQCC-N32	-	R-CQCC-N32	S-CQCC-N44
JESD-609 code	e0	-	e0	e0
length	13.97 mm	-	13.97 mm	16.55 mm
memory density	1048576 bit	-	1048576 bit	1048576 bit
Memory IC Type	EEPROM	-	EEPROM	EEPROM
memory width	8	-	8	8
Number of functions	1	-	1	1
Number of terminals	32	-	32	44
word count	131072 words	-	131072 words	131072 words
character code	128000	-	128000	128000
Operating mode	ASYNCHRONOUS	-	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	-	125 °C	125 °C
Minimum operating temperature	-55 °C	-	-55 °C	-55 °C
organize	128KX8	-	128KX8	128KX8
Output characteristics	3-STATE	-	3-STATE	3-STATE
Package body material	CERAMIC, METAL-SEALED COFIRED	-	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
encapsulated code	QCCN	-	QCCN	QCCN
Encapsulate equivalent code	LCC32,.45X.55	-	LCC32,.45X.55	LCC44,.65SQ
Package shape	RECTANGULAR	-	RECTANGULAR	SQUARE
Package form	CHIP CARRIER	-	CHIP CARRIER	CHIP CARRIER
page size	128 words	-	128 words	128 words
Parallel/Serial	PARALLEL	-	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	240	-	240	NOT SPECIFIED
power supply	5 V	-	5 V	5 V
Programming voltage	5 V	-	5 V	5 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified
Filter level	MIL-STD-883	-	MIL-STD-883	MIL-STD-883
Maximum seat height	2.54 mm	-	2.54 mm	2.74 mm
Maximum standby current	0.0003 A	-	0.0003 A	0.0003 A
Maximum slew rate	0.08 mA	-	0.08 mA	0.08 mA
Maximum supply voltage (Vsup)	5.5 V	-	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	-	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	-	5 V	5 V
surface mount	YES	-	YES	YES
technology	CMOS	-	CMOS	CMOS
Temperature level	MILITARY	-	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	-	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	NO LEAD	-	NO LEAD	NO LEAD
Terminal pitch	1.27 mm	-	1.27 mm	1.27 mm
Terminal location	QUAD	-	QUAD	QUAD
Maximum time at peak reflow temperature	30	-	30	NOT SPECIFIED
switch bit	YES	-	YES	YES
width	11.43 mm	-	11.43 mm	16.55 mm
Maximum write cycle time (tWC)	10 ms	-	10 ms	10 ms

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