MCP14A0153/4/5
1.5A Dual MOSFET Driver
with Low Threshold Input and Enable
Features
• High Peak Output Current: 1.5A (typical)
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• High Capacitive Load Drive Capability:
- 1000 pF in 11.5 ns (typical)
• Short Delay Times: 25 ns (t
D1
), 24 ns (t
D2
) (typical)
• Low Supply Current: 750 µA (typical)
• Low-Voltage Threshold Input and Enable with
Hysteresis
• Latch-up Protected: Withstands 500 mA Reverse
Current
• Space-Saving Packages:
- 8-Lead MSOP
- 8-Lead SOIC
- 8-Lead 2x3 TDFN
General Description
The MCP14A0153/4/5 devices are high-speed dual
MOSFET drivers that are capable of providing up to
1.5A of peak current while operating from a single 4.5V
to 18V supply. There are three output configurations
available: dual inverting (MCP14A0153), dual
non-inverting (MCP14A0154) and complementary
(MCP14A0155). These devices feature low
shoot-through current, matched rise and fall times and
short propagation delays, which make them ideal for
high switching frequency applications.
The MCP14A0153/4/5 family of devices offers
enhanced control with enable functionality. The
active-high enable pins can be driven low to drive the
corresponding outputs of the MCP14A0153/4/5 low,
regardless of the status of the input pin. An integrated
pull-up resistor allows the user to leave the enable pins
floating for standard operation.
These devices are highly latch-up resistant under any
condition within their power and voltage ratings. They
can accept up to 500 mA of reverse current being
forced back into their outputs without damage or logic
upset. All terminals are fully protected against
Electrostatic Discharge (ESD), up to 2 kV (HBM) and
200 V (MM).
Applications
•
•
•
•
•
Switch-Mode Power Supplies (SMPS)
Pulse Transformer Drive
Line Drivers
Level Translator
Motor and Solenoid Drive
Package Types
MCP14A0153
MSOP/SOIC
EN A
IN A
GND
IN B
1
2
3
4
8
7
6
5
EN B
OUT A
V
DD
OUT B
MCP14A0155
2×3 TDFN*
EN A
IN A
GND
IN B
1
2
3
4
8
7
6
5
EN B
OUT A
V
DD
OUT B
MCP14A0153
MCP14A0155
MCP14A0154
MCP14A0154
OUT A
OUT B
OUT A
OUT B
EP
9
OUT A
OUT B
OUT A
OUT B
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
2015-2017 Microchip Technology Inc.
DS20005470B-page 1
MCP14A0153/4/5
Functional Block Diagram
V
DD
Internal
Pull-up
Enable
V
REF
GND
V
DD
Input
V
REF
GND
Non-Inverting
Inverting
Output
MCP14A0153
Dual Inverting
MCP14A0154
Dual Non-Inverting
MCP14A0155
One Inverting, One Non-Inverting
DS20005470B-page 2
2015-2017 Microchip Technology Inc.
MCP14A0153/4/5
1.0
ELECTRICAL
CHARACTERISTICS
† Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this specifica-
tion is not intended. Exposure to maximum rating
conditions for extended periods may affect device
reliability.
Absolute Maximum Ratings†
V
DD
, Supply Voltage............................................. +20V
V
IN
, Input Voltage.......... (V
DD
+ 0.3V) to (GND – 0.3V)
V
EN
, Enable Voltage...... (V
DD
+ 0.3V) to (GND – 0.3V)
Package Power Dissipation (T
A
= +50°C)
8L MSOP ...................................................... 0.63W
8L SOIC ........................................................ 1.00W
8L 2 x 3 TDFN............................................... 1.86W
ESD Protection on all Pins .........................2 kV (HBM)
ESD Protection on all Pins
..........................200V (MM)
DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C, with 4.5V
V
DD
18V.
Parameters
Input
Input Voltage Range
Logic ‘1’ High Input Voltage
Logic ‘0’ Low Input Voltage
Input Voltage Hysteresis
Input Current
Enable
Enable Voltage Range
Logic ‘1’ High Enable Voltage
Logic ‘0’ Low Enable Voltage
Enable Voltage Hysteresis
Enable Pin Pull-up Resistance
Enable Input Current
Propagation Delay
Propagation Delay
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Latch-up Protection Withstand
Reverse Current
Note 1:
V
OH
V
OL
R
OH
R
OL
I
PK
I
REV
V
DD
– 0.025
—
—
—
—
0.5
—
—
4.5
3.0
1.5
—
—
0.025
6.5
4.5
—
—
V
V
Ω
Ω
A
A
I
OUT
= 0A
I
OUT
= 0A
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
V
DD
= 18V
(Note
1)
Duty cycle
2%, t
300 µs
(Note
1)
V
EN
V
EH
V
EL
V
HYST(EN)
R
ENBL
I
EN
t
D3
t
D4
GND – 0.3V
2
—
—
—
—
—
—
—
1.6
1.2
0.4
1.8
10
25
24
V
DD
+ 0.3
—
0.8
—
—
—
32
31
V
V
V
V
MΩ
µA
ns
ns
V
DD
= 18V, EN = GND
V
DD
= 18V, EN = GND
V
DD
= 18V, V
EN
= 5V,
see
Figure 4-3
(Note
1)
V
DD
= 18V, V
EN
= 5V,
see
Figure 4-3
(Note
1)
V
IN
V
IH
V
IL
V
HYST(IN)
I
IN
GND – 0.3
2.0
—
—
-1
—
1.6
1.2
0.4
—
V
DD
+ 0.3
—
0.8
—
+1
V
V
V
V
µA
0V
V
IN
V
DD
Sym.
Min.
Typ.
Max.
Units
Conditions
Tested during characterization, not production tested.
2015-2017 Microchip Technology Inc.
DS20005470B-page 3
MCP14A0153/4/5
DC CHARACTERISTICS (CONTINUED)
Electrical Specifications:
Unless otherwise noted, T
A
= +25°C, with 4.5V
V
DD
18V.
Parameters
Switching Time
(1)
Rise Time
t
R
—
11.5
18.5
ns
V
DD
= 18V, C
L
= 1000 pF,
see
Figure 4-1
and
Figure 4-2
(Note
1)
V
DD
= 18V, C
L
= 1000 pF,
see
Figure 4-1
and
Figure 4-2
(Note
1)
V
DD
= 18V, V
IN
= 5V,
see
Figure 4-1
and
Figure 4-2
(Note
1)
V
DD
= 18V, V
IN
= 5V,
see
Figure 4-1
and
Figure 4-2
(Note
1)
Sym.
Min.
Typ.
Max.
Units
Conditions
Fall Time
t
F
—
10
17
ns
Delay Time
t
D1
—
25
32
ns
t
D2
—
24
31
ns
Power Supply
Supply Voltage
Power Supply Current
V
DD
I
DD
I
DD
I
DD
I
DD
Note 1:
4.5
—
—
—
—
—
675
715
715
750
18
1120
1160
1160
1200
V
µA
µA
µA
µA
V
INA/B
= 3V, V
ENA/B
= 3V
V
INA/B
= 0V, V
ENA/B
= 3V
V
INA/B
= 3V, V
ENA/B
= 0V
V
INA/B
= 0V, V
ENA/B
= 0V
Tested during characterization, not production tested.
DC CHARACTERISTICS
(OVER OPERATING TEMPERATURE RANGE)
(1)
Electrical Specifications:
Unless otherwise indicated, over the operating range with 4.5V
V
DD
18V.
Parameters
Input
Input Voltage Range
Logic ‘1’ High Input Voltage
Logic ‘0’ Low Input Voltage
Input Voltage Hysteresis
Input Current
Enable
Enable Voltage Range
Logic ‘1’ High Enable Voltage
Logic ‘0’ Low Enable Voltage
Enable Voltage Hysteresis
Enable Input Current
Propagation Delay
Propagation Delay
Note 1:
V
EN
V
EH
V
EL
V
HYST(EN)
I
EN
t
D3
t
D4
GND – 0.3V
2.0
—
—
—
—
—
—
1.6
1.2
0.4
12
28
27
V
DD
+ 0.3
—
1.8
—
—
35
34
V
V
V
V
µA
ns
ns
V
DD
= 18V, EN = GND
V
DD
= 18V, V
EN
= 5V, T
A
= +125°C,
see
Figure 4-3
V
DD
= 18V, V
EN
= 5V, T
A
= +125°C,
see
Figure 4-3
V
IN
V
IH
V
IL
V
HYST(IN)
I
IN
GND – 0.3V
2.0
—
—
-10
—
1.6
1.2
0.4
—
V
DD
+ 0.3
—
1.8
—
+10
V
V
V
V
µA
0V
V
IN
V
DD
Sym.
Min.
Typ.
Max.
Units
Conditions
Tested during characterization, not production tested.
DS20005470B-page 4
2015-2017 Microchip Technology Inc.
MCP14A0153/4/5
DC CHARACTERISTICS
(OVER OPERATING TEMPERATURE RANGE)
(1)
(CONTINUED)
Electrical Specifications:
Unless otherwise indicated, over the operating range with 4.5V
V
DD
18V.
Parameters
Output
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Switching Time (Note
1)
Rise Time
t
R
—
14
21
ns
V
DD
= 18V, C
L
= 1000 pF,
T
A
= +125°C, see
Figure 4-1
and
Figure 4-2
V
DD
= 18V, C
L
= 1000 pF,
T
A
= +125°C, see
Figure 4-1
and
Figure 4-2
V
DD
= 18V, V
IN
= 5V, T
A
= +125°C,
see
Figure 4-1
and
Figure 4-2
V
DD
= 18V, V
IN
= 5V, T
A
= +125°C,
see
Figure 4-1
and
Figure 4-2
V
OH
V
OL
R
OH
R
OL
V
DD
– 0.025
—
—
—
—
—
—
—
—
0.025
9
6.5
V
V
Ω
Ω
DC Test
DC Test
I
OUT
= 10 mA, V
DD
= 18V
I
OUT
= 10 mA, V
DD
= 18V
Sym.
Min.
Typ.
Max.
Units
Conditions
Fall Time
t
F
—
13
20
ns
Delay Time
t
D1
t
D2
—
—
28
27
35
34
ns
ns
Power Supply
Supply Voltage
Power Supply Current
V
DD
I
DD
I
DD
I
DD
I
DD
Note 1:
4.5
—
—
—
—
—
—
—
—
—
18
1520
1560
1560
1600
V
µA
µA
µA
µA
V
IN
= 3V, V
EN
= 3V
V
IN
= 0V, V
EN
= 3V
V
IN
= 3V, V
EN
= 0V
V
IN
= 0V, V
EN
= 0V
Tested during characterization, not production tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications:
Unless otherwise noted, all parameters apply with 4.5V
V
DD
18V.
Parameter
Temperature Ranges
Specified Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Package Thermal Information
Junction-to-Ambient Thermal Resistance, 8LD MSOP
Junction-to-Ambient Thermal Resistance, 8LD SOIC
Junction-to-Ambient Thermal Resistance, 8LD TDFN
Junction-to-Top Characterization Parameter, 8LD MSOP
Junction-to-Top Characterization Parameter, 8LD SOIC
Junction-to-Top Characterization Parameter, 8LD TDFN
Junction-to-Board Characterization Parameter, 8LD MSOP
Junction-to-Board Characterization Parameter, 8LD SOIC
Junction-to-Board Characterization Parameter, 8L TDFN
Note 1:
JA
JA
JA
JT
JT
JT
JB
JB
JB
—
—
—
—
—
—
—
—
—
158
99.8
53.7
2.4
5.9
0.5
115.2
64.8
24.4
—
—
—
—
—
—
—
—
—
°C/W
(Note
1)
°C/W
(Note
1)
°C/W
(Note
1)
°C/W
(Note
1)
°C/W
(Note
1)
°C/W
(Note
1)
°C/W
(Note
1)
°C/W
(Note
1)
°C/W
(Note
1)
T
A
T
J
T
A
-40
—
-65
—
—
—
+125
+150
+150
°C
°C
°C
Sym.
Min.
Typ.
Max. Units
Comments
Parameter is determined using a High K 2S2P 4-layer board, as described in JESD 51-7, as well as
JESD 51-5 for packages with exposed pads.
2015-2017 Microchip Technology Inc.
DS20005470B-page 5
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