BTA2008-1000DN
3Q Triac
Rev - 01 24 July 2017
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT54 (TO-92) plastic package. This
"series DN" triac balances the requirements of commutation performance and gate sensitivity and is
intended for interfacing with low power drivers and logic ICs including microcontrollers.
2. Features and benefits
•
•
•
•
•
•
•
3Q technology for improved noise immunity
Direct gate triggering from low power drivers and logic ICs
High commutation capability with very sensitive gate
High voltage capability
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Very sensitive gate for easy logic level triggering
3. Applications
•
•
•
Low power motor controls
Small inductive loads e.g. solenoids, door locks, water valves
Small loads in large white goods
4. Quick reference data
Table 1. Quick reference data
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak
forward current
junction temperature
square-wave pulse; T
lead
≤ 57 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; t
p
= 20 ms; T
j(init)
= 25 °C;
Fig. 4; Fig. 5
full sine wave; t
p
= 16.7 ms; T
j(init)
= 25 °C
T
j
Conditions
Values
1000
0.8
9
9.9
125
Unit
V
A
A
A
°C
Absolute maximum rating
WeEn Semiconductors
BTA2008-1000DN
Conditions
V
D
= 12 V; I
T
= 0.1 A; T2+ G+
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2+ G-
T
j
= 25 °C;
Fig. 7
V
D
= 12 V; I
T
= 0.1 A; T2- G-
T
j
= 25 °C;
Fig. 7
Min
0.25
0.25
0.25
-
-
-
Typ
-
-
-
-
1.3
150
Max
5
5
5
10
1.6
-
Unit
mA
mA
mA
mA
V
V/μs
3Q Triac
Symbol
I
GT
Parameter
gate trigger current
Static characteristics
I
H
V
T
dV
D
/dt
holding current
on-state voltage
rate of rise of off-state
voltage
rate of change of
commutating current
V
D
= 12 V; T
j
= 25 °C;
Fig. 9
I
T
= 0.85 A; T
j
= 25 °C;
Fig. 10
V
DM
= 670 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform;
gate open circuit
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 0.8 A;
dV
com
/dt = 10 V/μs; gate open circuit;
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 0.8 A;
dV
com
/dt = 1 V/μs; gate open circuit
Dynamic characteristics
dI
com
/dt
0.5
1
-
-
-
-
A/ms
A/ms
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
1
2
3
T2
G
T1
main terminal 2
gate
main terminal 1
321
Simplified outline
Graphic symbol
T2
sym051
T1
G
TO-92 (SOT54)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BTA2008-1000DN
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
7. Marking
Table 4. Marking codes
Type number
BTA2008-1000DN
BTA2008-1000DN
Marking codes
BTA2008-1000DN
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
24 July 2017
2 / 12
WeEn Semiconductors
BTA2008-1000DN
3Q Triac
8. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
I
T(RMS)
I
TSM
Parameter
repetitive peak off-state
voltage
RMS on-state current
non-repetitive peak on-
state current
I
2
t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
over any 20 ms period
full sine wave; T
lead
≤ 57°C;
Fig. 1;
Fig. 2; Fig. 3
full sine wave; t
p
= 20 ms; T
j(init)
= 25 °C;
Fig. 4; Fig. 5
full sine wave; t
p
= 16.7 ms; T
j(init)
= 25 °C
I
2
t
dI
T
/dt
I
GM
P
GM
P
G(AV)
T
stg
T
j
t
p
= 10ms; sine wave
I
G
= 10mA
Conditions
Values
1000
0.8
9
9.9
0.41
100
1
2
0.1
-40 to 150
125
Unit
V
A
A
A
A
2
/s
A/μs
A
W
W
°C
°C
I
T(RMS)
(A)
1
57 °C
baed7-001
I
T(RMS)
(A)
3.6
baed7-002
0.8
2.8
0.6
2
0.4
1.2
0.2
0
-50
0
50
100
150
T
sp
(°C)
0.4
10
-2
10
-1
1
10
surge duration (s)
Fig. 1. RMS on-state current as a function of solder
point temperature; maximum values
f = 50Hz; T
lead
= 57 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA2008-1000DN
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
24 July 2017
3 / 12
WeEn Semiconductors
BTA2008-1000DN
baed7-003
3Q Triac
P
tot
(W)
1.6
conduction form
angle
factor
(degrees)
α
30
60
90
120
180
2.816
1.976
1.570
1.329
1.110
α
α = 180°
120 °
90°
60°
30°
29
T
sp(max)
(°C)
53
1.2
0.8
77
0.4
101
0
0
0.2
0.4
0.6
0.8
α = conduction angle
a = form factor = I
T(RMS)
/ I
T(AV)
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
I
TSM
(A)
10
I
T(RMS)
(A)
125
1
baed7-004
I
T
8
I
TSM
t
6
T
T
j(init)
= 25 °C max
4
2
0
1
10
10
2
number of cycles (n)
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
I
TSM
(A)
10
3
I
T
baed7-005
I
TSM
t
10
2
(1)
T
T
j(init)
= 25 °C max
10
1
10
-5
10
-4
10
-3
10
-2
t
p
≤ 20 ms ;
(1) dI
T
/dt limit
Fig. 5. Total power dissipation as a function of RMS on-state current; maximum values
BTA2008-1000DN
All information provided in this document is subject to legal disclaimers.
©
t
p
(s)
10
-1
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
24 July 2017
4 / 12
WeEn Semiconductors
BTA2008-1000DN
3Q Triac
9. Thermal characteristics
Table 5. Thermal characteristics
Symbol
R
th(j-lead)
R
th(j-a)
Parameter
thermal resistance
from junction to lead
thermal resistance
from junction to
ambient free air
Conditions
Fig. 6
in free air
Min
-
-
Typ
-
150
Max
60
-
Unit
K/W
K/W
Z
th(j-lead)
(K/W)
10
2
baed7-006
10
1
P
10
-1
t
p
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
T
δ=
t
T
t
p
(s)
10
Fig. 6. Transient thermal impedance from junction to
lead
as a function of pulse duration
BTA2008-1000DN
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2017. All rights reserved
Product data sheet
24 July 2017
5 / 12
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