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SI8283BC-ISR

Description
gate driver
Categorysemiconductor    Power management IC    Gate driver   
File Size1MB,47 Pages
ManufacturerSilicon Labs
Websitehttps://www.silabs.com
Environmental Compliance
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SI8283BC-ISR Overview

gate driver

SI8283BC-ISR Parametric

Parameter NameAttribute value
MakerSilicon Labs
Product Categorygate driver
Installation styleSMD/SMT
Package/boxSOIC-24
productIsolated Gate Drivers
Number of exciters1 Driver
Output current84 mA
Rise Time5.5 ns
Fall time8.5 ns
Supply voltage - max.5.5 V
Supply voltage - min.2.8 V
Propagation Delay—Max.50 ns
Minimum operating temperature- 40 C
Maximum operating temperature+ 125 C
typeHigh Side, Low Side
seriesSi8283
EncapsulationReel
Number of outputs1 Output
The output voltage30 V
technologySi
logical typeCMOS
Working power current10.5 mA
Pd-power dissipation100 mW
Rds On - drain-source on-resistance2.48 Ohms
Factory packaging quantity1250
Si8281/82/83/84 Data Sheet
ISODrivers with Integrated DC-DC Converters
KEY FEATURES
The Si828x family (Si8281/82/83/84) is made up of isolated, high-current gate drivers
with integrated system safety and feedback functions. These devices are ideal for driving
power MOSFETs and IGBTs used in a wide variety of inverter and motor control applica-
tions. The Si828x isolated gate drivers utilize Silicon Labs' proprietary silicon isolation
technology, supporting up to 5.0 kVrms withstand voltage per UL1577. This technology
enables higher-performance, reduced variation with temperature and age, tighter part-to-
part matching, and superior common-mode rejection compared to other isolated gate
driver technologies.
In addition to the gate driver, the Si828x family integrates a dc-dc controller for simple
implementation of an isolated supply for the driver side. The Si828x dc-dc controller can
be ordered in two different configurations depending on what system voltage rails are
available and the amount of power needed. The Si8281 and Si8283 have integrated
power switch but are limited in dc-dc voltage input to the device bias. The Si8282 and
Si8284 utilize and external power switch and are able to accept much higher voltage in-
put power rail. User-adjustable frequency for minimizing emissions, a soft-start function
for safety, and a shut-down option are available options. The device requires only mini-
mal passive components and a miniature transformer.
The input to the device is a complementary digital input that can be utilized in several
configurations. The input side of the isolation also has several control and feedback digi-
tal signals. The controller to the device receives information about the driver side power
state and fault state of the device and recovers the device from fault through an active-
low reset pin.
On the output side, Si828x devices provide separate pull-up and pull-down pins for the
gate. A dedicated DSAT pin detects the desaturation condition and immediately shuts
down the driver in a controlled manner. The Si828x devices also integrate a Miller clamp
to facilitate a strong turn-off of the power switch.
Applications
• IGBT/ MOSFET gate drives
• Industrial, HEV, and renewable energy inverters
• AC, Brushless, and DC motor controls and drives
• Variable-speed motor controllers
• Isolated switch mode and UPS power supplies
Safety Regulatory Approvals (Pending)
• UL 1577 recognized
• Up to 5000 V
RMS
for 1 minute
• CSA component notice 5A approval
• IEC 60950-1 (reinforced insulation)
• VDE certification conformity
• VDE0884 Part 10 (basic insulation)
• CQC certification approval
• GB4943.1 (reinforced insulation)
silabs.com
| Building a more connected world.
• System Safety Features
• DESAT detection
• FAULT feedback
• Undervoltage Lock Out (UVLO)
• Soft shutdown on fault condition
• Silicon Labs’ high-performance isolation
technology
• Industry leading noise immunity
• High speed, low latency and skew
• Best reliability available
• 30 V driver-side supply voltage
• Integrated Miller clamp
• Power ready pin
• Complementary driver control input
• Compact packages: 20 and 24-pin wide-
body SOIC
• Integrated DC-DC converter
• Feedback-controlled converter with
dithering for low EMI
• DC-DC converter efficiency of 83%
• Shutdown, frequency, and soft-start
controls
• Industrial temp range: –40 to 125 °C
Rev. 1.0

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Description gate driver Gate driverIsolated IGBT driver with feature-rich integrated dc-dc gate driver Gate driver 4.0 Amp driver with integrated, controllable, external switch dc/dc Gate driver 4.0 Amp driver with integrated, simple, external switch dc/dc Gate driverIsolated IGBT driver with feature-rich integrated dc-dc Gate driverIsolated IGBT driver with feature-rich integrated dc-dc
Maker Silicon Labs Silicon Labs Silicon Labs Silicon Labs Silicon Labs Silicon Labs Silicon Labs
Product Category gate driver gate driver gate driver gate driver gate driver gate driver gate driver
Installation style SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT SMD/SMT
Package/box SOIC-24 SOIC-24 SOIC-24 SOIC-24 SOIC-20 SOIC-24 SOIC-24
product Isolated Gate Drivers Isolated Gate Drivers Isolated Gate Drivers Isolated Gate Drivers Isolated Gate Drivers Isolated Gate Drivers Isolated Gate Drivers
Number of exciters 1 Driver 1 Driver 1 Driver 1 Driver 1 Driver 1 Driver 1 Driver
Output current 84 mA 84 mA 84 mA 84 mA 84 mA 84 mA 10.2 mA
Rise Time 5.5 ns 5.5 ns 5.5 ns 5.5 ns 5.5 ns 5.5 ns 10.5 ns
Fall time 8.5 ns 8.5 ns 8.5 ns 8.5 ns 8.5 ns 8.5 ns 13.3 ns
Supply voltage - max. 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Supply voltage - min. 2.8 V 2.8 V 2.8 V 2.8 V 2.8 V 2.8 V 3 V
Minimum operating temperature - 40 C - 40 C - 40 C - 40 C - 40 C - 40 C - 40 C
Maximum operating temperature + 125 C + 125 C + 125 C + 125 C + 125 C + 125 C + 125 C
type High Side, Low Side High Side, Low Side High Side, Low Side High Side, Low Side High Side, Low Side High Side, Low Side Inverting, Non Inverting
Number of outputs 1 Output 1 Output 1 Output 1 Output 1 Output 1 Output 1 Output
The output voltage 30 V 30 V 30 V 30 V 30 V 30 V 30 V
technology Si Si Si Si Si Si Si
Working power current 10.5 mA 10.5 mA 10.5 mA 10.5 mA 10.5 mA 10.5 mA 2.5 mA
Pd-power dissipation 100 mW 100 mW 100 mW 100 mW 100 mW 100 mW 300 mW
Rds On - drain-source on-resistance 2.48 Ohms 2.48 Ohms 2.48 Ohms 2.48 Ohms 2.48 Ohms 2.48 Ohms 2.5 Ohms
Factory packaging quantity 1250 46 1250 1250 1250 46 46
Propagation Delay—Max. 50 ns 50 ns 50 ns 50 ns 50 ns 50 ns -
series Si8283 Si8283 Si8284 Si8284 Si8282 Si8284 -
Encapsulation Reel Tube Reel Reel Reel Tube -
logical type CMOS CMOS CMOS CMOS CMOS CMOS -
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