PTFC261402FC-V1-R250 datasheet, PDF

Datasheet> All Categories > semiconductor> Discrete semiconductor> The transistor> The RF transistor> Radio frequency (RF) metal oxide semiconductor field effect transistor (RF MOSFET)> PTFC261402FC-V1-R250

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PTFC261402FC-V1-R250: DescriptionRadio frequency metal oxide semiconductor field effect (RF MOSFET) transistor RF LDMOS FET; Categorysemiconductor Discrete semiconductor The transistor The RF transistor Radio frequency (RF) metal oxide semiconductor field effect transistor (RF MOSFET); File Size313KB，11 Pages; ManufacturerWolfspeed (Cree); Environmental Compliance

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PTFC261402FC-V1-R250 Overview

Radio frequency metal oxide semiconductor field effect (RF MOSFET) transistor RF LDMOS FET

PTFC261402FC-V1-R250 Parametric

Parameter Name	Attribute value
Maker	Wolfspeed (Cree)
Product Category	Radio Frequency Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor
Transistor polarity	Dual N-Channel
technology	Si
Vds - drain-source breakdown voltage	65 V
Rds On - drain-source on-resistance	100 mOhms
Gain	18 dB
Output Power	140 W
Maximum operating temperature	+ 225 C
Installation style	SMD/SMT
Package/box	H-37248-4
Encapsulation	Reel
working frequency	2620 MHz to 2690 MHz
type	RF Power MOSFET
Number of channels	2 Channel
Factory packaging quantity	250
Vgs - gate-source voltage	10 V

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PTFC261402FC

Thermally-Enhanced High Power RF LDMOS FET

140 W, 28 V, 2620 – 2690 MHz

Description

The PTFC261402FC is a 140-watt LDMOS FET intended for use

in multi-standard cellular power ampliﬁer applications in the 2620

to 2690 MHz frequency band. Features include input and output

matching, high gain and thermally-enhanced package with earless

ﬂange. Manufactured with Wolfspeed's advanced LDMOS process, this

device provides excellent thermal performance and superior reliability.

PTFC261402FC

Package H-37248-4

Single-carrier WCDMA Drive-up

= 28 V, I

= 900 mA, ƒ = 2620 MHz

3GPP WCDMA signal, 7.5 dB PAR,

3.84 MHz BW

Features

•

Broadband internal matching

Wide video bandwidth

Typical pulsed CW performance, 2655 MHz, 28 V

(combined outputs)

- Output power at P

1dB

= 140 W

- Efﬁciency = 50%

- Gain = 16.5 dB

Typical single-carrier WCDMA performance, 2655

MHz, 28 V

- Output power = 46 dBm avg

- Gain = 17.5 dB

- Efﬁciency = 30.5%

Capable of handling 10:1 VSWR @ 28 V, 140 W

(CW) output power

Integrated ESD protection

Human Body Model Class 1C (per ANSI/ESDA/

JEDEC JS-001)

Low thermal resistance

Pb-free and RoHS compliant

Peak/Average (dB), Gain (dB)

Efficiency

Gain

Efficiency (%)

-20

-40

c261402fc_gr1

•

PAR @ 0.01% CCDF

•

-60

Average Output Power (dBm)

RF Characteristics

Single-carrier WCDMA Speciﬁcations

(combined outputs, tested in Wolfspeed production test ﬁxture)

= 28 V, I

= 900 mA, P

OUT

= 28 W avg, ƒ = 2655 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,

peak/average = 10 dB @ 0.01% CCDF

Characteristic

Gain

Drain Efficiency

Adjacent Channel Power Ratio

All published data at T

CASE

= 25°C unless otherwise indicated

Symbol

Min

23.5

—

Typ

–34

Max

—

–31

Unit

dBc



ACPR

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Rev. 06, 2018-07-03

4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com

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