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STGIPQ3HD60-HZ

Description
IGBT module SLLIMM-nano 2nd series IPM, 3 A, 600 V 3-phase IGBT inverter bridge
Categorysemiconductor    Discrete semiconductor    The transistor    IGBT module   
File Size1MB,25 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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STGIPQ3HD60-HZ Overview

IGBT module SLLIMM-nano 2nd series IPM, 3 A, 600 V 3-phase IGBT inverter bridge

STGIPQ3HD60-HZ Parametric

Parameter NameAttribute value
MakerSTMicroelectronics
Product CategoryIGBT module
productIGBT Silicon Modules
Configuration3-Phase Inverter
Collector-emitter maximum voltage VCEO600 V
Collector-emitter saturation voltage2.15 V
Continuous collector current at 25 C3 A
Pd-power dissipation8 W
Package/boxN2DIP-Z-26
Minimum operating temperature- 40 C
Maximum operating temperature+ 150 C
seriesSTGIPQ3HD60-HZ
Installation styleThrough Hole
Factory packaging quantity360
STGIPQ3HD60-HL,
STGIPQ3HD60-HZ
SLLIMM™ nano - 2
nd
series
IPM, 3 A, 600 V, 3-phase IGBT inverter bridge
Datasheet - production data
Applications
3-phase inverters for motor drives
Dish washers, refrigerator compressors,
heating systems, air-conditioning fans,
draining and recirculation pumps
N2DIP-26L type L
Description
This second series of SLLIMM (small low-loss
intelligent molded module) nano provides a
compact, high performance AC motor drive in a
simple, rugged design. It is composed of six
improved IGBTs with freewheeling diodes and
three half-bridge HVICs for gate driving, providing
low electromagnetic interference (EMI)
characteristics with optimized switching speed.
The package is designed to allow a better and
more easily screwed-on heatsink and is
optimized for thermal performance and
compactness in built-in motor applications or
other low power applications where assembly
space is limited. This IPM includes a completely
uncommitted operational amplifier and a
comparator that can be used to design a fast and
efficient protection circuit. SLLIMM™ is a
trademark of STMicroelectronics.
N2DIP-26L type Z
Features
IPM 3 A, 600 V, 3-phase IGBT inverter
bridge including control ICs for gate driving
and freewheeling diodes
Optimized for low electromagnetic
interference
V
CE(sat)
negative temperature coefficient
3.3 V, 5 V, 15 V CMOS/TTL input
comparators with hysteresis and pull-
down/pull-up resistors
Blanking time t
dead
≥ 1 µs
Undervoltage lockout
Internal bootstrap diode
Interlocking function
Smart shutdown function
Comparator for fault protection against
overtemperature and overcurrent
Op-amp for advanced current sensing
Optimized pinout for easy board layout
Isolation ratings of 1500 Vrms/min.
UL recognition: UL 1557 file E81734
Order code
STGIPQ3HD60-HL
STGIPQ3HD60-HZ
Marking
GIPQ3HD60-HL
GIPQ3HD60-HZ
Table 1: Device summary
Package
N2DIP-26L type L
N2DIP-26L type Z
Packing
Tube
June 2017
DocID030077 Rev 2
1/24
www.st.com
This is information on a product in full production.

STGIPQ3HD60-HZ Related Products

STGIPQ3HD60-HZ STGIPQ3HD60-HL
Description IGBT module SLLIMM-nano 2nd series IPM, 3 A, 600 V 3-phase IGBT inverter bridge IGBT module SLLIMM-nano 2nd series IPM, 3 A, 600 V 3-phase IGBT inverter bridge
Maker STMicroelectronics STMicroelectronics
Product Category IGBT module IGBT module
product IGBT Silicon Modules IGBT Silicon Modules
Configuration 3-Phase Inverter 3-Phase Inverter
Collector-emitter maximum voltage VCEO 600 V 600 V
Collector-emitter saturation voltage 2.15 V 2.15 V
Continuous collector current at 25 C 3 A 3 A
Pd-power dissipation 8 W 8 W
Package/box N2DIP-Z-26 N2DIP-L-26
Minimum operating temperature - 40 C - 40 C
Maximum operating temperature + 150 C + 150 C
series STGIPQ3HD60-HZ STGIPQ3HD60-HL
Installation style Through Hole Through Hole
Factory packaging quantity 360 360

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