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MRFE6VP6300-230

Description
Radio frequency metal oxide semiconductor field effect (RF MOSFET) transistor MRFE6VP6300-230
Categorysemiconductor    Discrete semiconductor    The transistor    The RF transistor    Radio frequency (RF) metal oxide semiconductor field effect transistor (RF MOSFET)   
File Size1MB,15 Pages
ManufacturerFREESCALE (NXP)
Environmental Compliance
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Radio frequency metal oxide semiconductor field effect (RF MOSFET) transistor MRFE6VP6300-230

MRFE6VP6300-230 Parametric

Parameter NameAttribute value
MakerFREESCALE (NXP)
Product CategoryRadio Frequency Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor
Installation styleSMD/SMT
Package/boxNI-780
seriesMRFE6VP6300
Factory packaging quantity1
Freescale Semiconductor
Technical Data
Document Number: MRFE6VP6300H
Rev. 1, 7/2011
RF Power Field Effect Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
These high ruggedness devices are designed for use in high VSWR industrial
(including laser and plasma exciters), broadcast (analog and digital), aerospace
and radio/land mobile applications. They are unmatched input and output
designs allowing wide frequency range utilization, between 1.8 and 600 MHz.
Typical Performance: V
DD
= 50 Volts, I
DQ
= 100 mA
Signal Type
Pulsed (100
μsec,
20% Duty Cycle)
CW
P
out
(W)
300 Peak
300 Avg.
f
(MHz)
230
130
G
ps
(dB)
26.5
25.0
η
D
(%)
74.0
80.0
IRL
(dB)
--16
--15
MRFE6VP6300HR3
MRFE6VP6300HSR3
1.8-
-600 MHz, 300 W, 50 V
LATERAL N-
-CHANNEL
BROADBAND
RF POWER MOSFETs
Capable of Handling a Load Mismatch of 65:1 VSWR, @ 50 Vdc, 230 MHz,
at all Phase Angles
300 Watts CW Output Power
300 Watts Pulsed Peak Power, 20% Duty Cycle, 100
μsec
Capable of 300 Watts CW Operation
Features
Unmatched Input and Output Allowing Wide Frequency Range Utilization
Device can be used Single--Ended or in a Push--Pull Configuration
Qualified Up to a Maximum of 50 V
DD
Operation
Characterized from 30 V to 50 V for Extended Power Range
Suitable for Linear Application with Appropriate Biasing
Integrated ESD Protection
Greater Negative Gate--Source Voltage Range for Improved Class C Operation
Characterized with Series Equivalent Large--Signal Impedance Parameters
RoHS Compliant
NI--780--4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width,
13 inch Reel. For R5 Tape and Reel options, see p. 14.
NI--780S--4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width,
13 inch Reel. For R5 Tape and Reel options, see p. 14.
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Storage Temperature Range
Case Operating Temperature
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
P
D
T
J
Value
--0.5, +130
--6.0, +10
--65 to +150
150
1050
5.26
225
Unit
Vdc
Vdc
°C
°C
W
W/°C
°C
CASE 465M-
-01, STYLE 1
NI-
-780-
-4
MRFE6VP6300HR3
CASE 465H-
-02, STYLE 1
NI-
-780S-
-4
MRFE6VP6300HSR3
RF
in
/V
GS
3
1 RF
out
/V
DS
RF
in
/V
GS
4
2 RF
out
/V
DS
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
(4)
Pulsed: Case Temperature 75°C, 300 W Pulsed, 100
μsec
Pulse Width, 20% Duty Cycle,
50 Vdc, I
DQ
= 100 mA, 230 MHz
CW: Case Temperature 87°C, 300 W CW, 50 Vdc, I
DQ
= 1100 mA, 230 MHz
Symbol
Value
(2,3)
Unit
°C/W
Z
θJC
R
θJC
0.05
0.19
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
4. Same test circuit is used for both pulsed and CW.
©
Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
MRFE6VP6300HR3 MRFE6VP6300HSR3
1
RF Device Data
Freescale Semiconductor

MRFE6VP6300-230 Related Products

MRFE6VP6300-230 MRFE6VP6300-88
Description Radio frequency metal oxide semiconductor field effect (RF MOSFET) transistor MRFE6VP6300-230 Radio frequency metal oxide semiconductor field effect (RF MOSFET) transistor MRFE6VP6300-88
Maker FREESCALE (NXP) FREESCALE (NXP)
Product Category Radio Frequency Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor Radio Frequency Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistor
Installation style SMD/SMT SMD/SMT
Package/box NI-780 NI-780
series MRFE6VP6300 MRFE6VP6300
Factory packaging quantity 1 1
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