DMPH4025SFVWQ
40V 175°C P-CHANNEL ENHANCEMENT MODE MOSFET
PowerDI3333-8 (SWP) (Type UX)
Product Summary
ADVANCE INFORMATION
ADVANCED INFORMATION
BV
DSS
R
DS(ON)
Max
25mΩ @ V
GS
= -10V
-40V
45mΩ @ V
GS
= -4.5V
-30A
I
D
Max
T
C
= +25°C
-40A
Features and Benefits
Rated to +175°C—Ideal for High Ambient
Environments
Low R
DS(ON)
—
Ensures Minimal On-State Losses
Temperature
Small Form Factor Thermally Efficient Package Enables Higher
Density End Products
Occupies Just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of
automotive applications. It is qualified to AEC-Q101, supported by a
PPAP, and is ideal for use in:
Reverse-Polarity Protection
Power-Management Functions
DC-DC Converters
Mechanical Data
Case: PowerDI 3333-8 (SWP) (Type UX)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish—Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
®
PowerDI3333-8 (SWP) (Type UX)
D
D
D
D
D
G
G
S
S
S
Top View
Pin1
Bottom View
Equivalent Circuit
S
Ordering Information
(Note 5)
Part Number
DMPH4025SFVWQ-7
DMPH4025SFVWQ-13
Notes:
Case
PowerDI3333-8 (SWP) (Type UX)
PowerDI3333-8 (SWP) (Type UX)
Packaging
2000/Tape & Reel
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
YYWW
PW1 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 17 = 2017)
WW = Week Code (01 to 53)
PW1
PowerDI is a registered trademark of Diodes Incorporated.
DMPH4025SFVWQ
Document number: DS39847 Rev. 5 - 2
1 of 7
www.diodes.com
May 2018
© Diodes Incorporated
DMPH4025SFVWQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
ADVANCE INFORMATION
ADVANCED INFORMATION
Drain-Source Voltage
Gate-Source Voltage
T
A
= +25°C
T
A
= +70°C
T
C
= +25°C
T
C
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
D
(Package Limit)
Value
-40
±20
-8.7
-7.3
-40
-33
-80
-3
-80
-23
82
Unit
V
V
A
A
A
A
A
A
mJ
Continuous Drain Current (Note 6) V
GS
= -10V
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Maximum Continuous Body Diode Forward Current
Pulsed Source Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current, L = 0.3mH
Avalanche Energy, L = 0.3mH
I
DM
I
S
I
SM
I
AS
E
AS
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
T
A
= +25°C
T
C
= +25°C
Steady State
Symbol
P
D
R
ϴJA
R
ϴJC
T
J,
T
STG
Value
2.3
60
53
2.5
-55 to +175
Unit
W
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
-40
—
—
-0.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
18
23
—
1918
390
151
5.76
19.6
38.6
3.7
7.3
4.8
14.2
72.2
35.9
Max
—
-1
±100
-1.8
25
45
-1
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -40V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -30A
V
GS
= -4.5V, I
D
= -15A
V
GS
= 0V, I
S
= -1A
V
DS
= -20V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -20V, I
D
= -3A
V
DD
= -20V, V
GS
= -10V,
I
D
= -3A
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMPH4025SFVWQ
Document number: DS39847 Rev. 5 - 2
2 of 7
www.diodes.com
May 2018
© Diodes Incorporated
DMPH4025SFVWQ
50.0
45.0
V
GS
= -10V
V
GS
= -3.5V
V
GS
= -4.0V
V
GS
= -5.0V
V
GS
= -3.0V
I
D
, DRAIN CURRENT (A)
V
GS
= -4.5V
25
20
15
10
5
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(m)
40
35
30
25
20
15
10
5
0
0
5
10
15
20
25
30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
40
V
GS
= -10V
35
T
J
= 150℃
30
25
20
15
10
5
0
0
5
10
15
20
25
30
I
D
, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
T
J
= 85℃
T
J
= 25℃
T
J
= -55℃
T
J
= 125℃
T
J
= 175℃
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
V
GS
= -4.5V, I
D
= -15A
V
GS
= -10V, I
D
= -30A
V
GS
= -10V
V
GS
= -4.5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (m)
200
180
160
140
120
100
80
60
40
20
0
2
I
D
= -15A
4
6
8
10
12
14
16
18
20
I
D
= -30A
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
30
V
DS
= -5.0V
ADVANCE INFORMATION
ADVANCED INFORMATION
40.0
I
D
, DRAIN CURRENT (A)
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0.0
V
GS
= -2.7V
V
GS
= -2.5V
V
GS
= -2.0V
V
GS
= -2.2V
T
J
= 175℃
T
J
= 150℃
T
J
= 125℃
T
J
= 85℃
T
J
= 25℃
T
J
= -55℃
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(m)
DMPH4025SFVWQ
Document number: DS39847 Rev. 5 - 2
3 of 7
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R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
May 2018
© Diodes Incorporated
DMPH4025SFVWQ
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(m)
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
50
2
40
ADVANCE INFORMATION
ADVANCED INFORMATION
1.5
I
D
= -1mA
30
V
GS
= -4.5V, I
D
= -15A
1
I
D
= -250μA
20
V
GS
= -10V, I
D
= -30A
0.5
10
0
-50
-25
0
25
50
75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
30
V
GS
= 0V
C
T
, JUNCTION CAPACITANCE (pF)
0
-50
-25
0
25
50
75
100 125 150 175
T
J
, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
f = 1MHz
C
iss
1000
C
oss
25
I
S
, SOURCE CURRENT (A)
20
15
10
T
J
= 175
o
C
T
J
= 150
o
C
T
J
= 125
o
C
T
J
= 85
o
C
100
C
rss
5
T
J
= 25
o
C
T
J
= -55
o
C
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
9
8
7
6
V
GS
(V)
5
4
3
2
1
0
0
5
10
15
20
25
30
35
40
Q
g
(nC)
Figure 11. Gate Charge
V
DS
= -20V, I
D
= -3A
I
D
, DRAIN CURRENT (A)
10
0
4
8
12
16
20
24
28
32
36
40
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
100
R
DS(ON)
Limited
10
P
W
= 1µs
1
P
W
= 10µs
P
W
= 100µs
P
W
= 1ms
P
W
= 10ms
T
J(Max)
= 175℃
T
C
= 25℃
P
W
= 100ms
Single Pulse
P
W
= 1s
DUT on Infinite Heatsink
V
GS
= -10V
0.1
1
10
100
0.1
0.01
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
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© Diodes Incorporated
DMPH4025SFVWQ
Document number: DS39847 Rev. 5 - 2
DMPH4025SFVWQ
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
1E-06
1E-05 0.0001 0.001
0.01
0.1
1
10
100
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 129℃/W
Duty Cycle, D = t1 / t2
1000
10000 100000 1000000
ADVANCE INFORMATION
ADVANCED INFORMATION
t1, PULSE DURATION TIME (sec)
Figure 13. Transient Thermal Resistance
DMPH4025SFVWQ
Document number: DS39847 Rev. 5 - 2
5 of 7
www.diodes.com
May 2018
© Diodes Incorporated
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