A2C50S65M2-F
Datasheet
ACEPACK™ 2 converter inverter brake, 650 V, 50 A
trench gate field‑stop M series IGBT with soft diode and NTC
Features
•
•
ACEPACK™ 2 power module
–
DBC Cu Al
2
O
3
Cu
Converter inverter brake topology
–
1600 V, very low drop rectifiers for converter
–
650 V, 50 A IGBTs and diodes
–
Soft and fast recovery diode
Integrated NTC
•
ACEPACK
TM
2
Applications
•
•
Inverters
Motor drives
Description
This power module is a converter-inverter brake (CIB) topology in an ACEPACK™ 2
package with NTC, integrating the advanced trench gate field-stop technology from
STMicroelectronics. This new IGBT technology represents the best compromise
between conduction and switching loss, to maximize the efficiency of any converter
system up to 20 kHz.
Product status
A2C50S65M2-F
Product summary
Order code
Marking
Package
Leads type
A2C50S65M2-F
A2C50S65M2-F
ACEPACK™ 2
Press fit contact pins
DS12341
-
Rev 3
-
November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
A2C50S65M2-F
Electrical ratings
1
Electrical ratings
1.1
Inverter stage
Limiting values at T
J
= 25 °C, unless otherwise specified.
1.1.1
IGBTs
Table 1.
Absolute maximum ratings of the IGBTs, inverter stage
Symbol
V
CES
I
C
I
CP
(1)
V
GE
P
TOT
T
JMAX
T
Jop
Description
Collector-emitter voltage (V
GE
= 0 V)
Continuous collector current (T
C
= 100 °C)
Pulsed collector current (t
p
= 1 ms)
Gate-emitter voltage
Total power dissipation of each IGBT (T
C
= 25 °C, T
J
= 175 °C)
Maximum junction temperature
Operating junction temperature range under switching conditions
Value
650
50
100
±20
208
175
-40 to 150
Unit
V
A
A
V
W
°C
°C
1. Pulse width limited by maximum junction temperature
Table 2.
Electrical characteristics of the IGBTs, inverter stage
Symbol
V
(BR)CES
Parameter
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Turn-on delay time
Current rise time
Turn-on switching energy
V
CC
= 520 V, I
C
= 50 A,
V
GE
= ±15 V
V
CC
= 300 V, I
C
= 50 A,
R
G
= 6.8 Ω, V
GE
= ±15 V,
di/dt = 2320 A/µs
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0 V
Test conditions
I
C
= 1 mA, V
GE
= 0 V
V
GE
= 15 V, I
C
= 50 A
V
GE
= 15 V, I
C
= 50 A,
T
J
= 150 ˚C
V
CE
= V
GE
, I
C
= 1 mA
V
GE
= 0 V, V
CE
= 650 V
V
CE
= 0 V, V
GE
= ±20 V
4150
170
80
150
147
17.5
0.147
5
Min.
650
1.95
2.3
6
7
100
±500
V
μA
nA
pF
pF
pF
nC
ns
ns
mJ
2.3
Typ.
Max.
Unit
V
V
V
V
CE(sat)
(terminal)
V
GE(th)
I
CES
I
GES
C
ies
C
oes
C
res
Q
g
t
d(on)
t
r
E
on
(1)
DS12341
-
Rev 3
page 2/18
A2C50S65M2-F
Inverter stage
Symbol
t
d(off)
t
f
E
off
(2)
t
d(on)
t
r
E
on
(1)
t
d(off)
t
f
E
off
(2)
t
SC
R
THj-c
R
THc-h
Parameter
Turn-off delay time
Current fall time
Turn-off switching energy
Turn-on delay time
Current rise time
Turn-on switching energy
Turn-off delay time
Current fall time
Turn-off switching energy
Short-circuit withstand time
Thermal resistance junction-to-
case
Thermal resistance case-to-
heatsink
Test conditions
V
CC
= 300 V, I
C
= 50 A,
R
G
= 6.8 Ω, V
GE
= ±15 V,
dv/dt = 7400 V/µs
V
CC
= 300 V, I
C
= 50 A,
R
G
= 6.8 Ω, V
GE
= ±15 V,
di/dt = 2010 A/µs, T
J
= 150 °C
V
CC
= 300 V, I
C
= 50 A,
R
G
= 6.8 Ω, V
GE
= ±15 V,
dv/dt = 6000 V/µs, T
J
= 150 °C
V
CC
≤ 360 V, V
GE
≤ 15 V,
T
Jstart
≤ 150 °C
Each IGBT
Each IGBT, λ
grease
= 1 W/(m·°C)
Min.
Typ.
105
133
1.36
147
20
0.318
104
194
1.82
Max.
Unit
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
µs
6
0.65
0.79
0.72
°C/W
°C/W
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
1.1.2
Diode
Limiting values at T
J
= 25 °C, unless otherwise specified.
Table 3.
Absolute maximum ratings of the diode, inverter stage
Symbol
V
RRM
I
F
I
FP
(1)
T
JMAX
T
Jop
Parameter
Repetitive peak reverse voltage
Continuous forward current (T
C
= 100 °C)
Pulsed forward current (t
p
= 1 ms)
Maximum junction temperature
Operating junction temperature range under switching conditions
Value
650
50
100
175
-40 to 150
Unit
V
A
A
°C
°C
1. Pulse width limited by maximum junction temperature
Table 4.
Electrical characteristics of the diode, inverter stage
Symbol
V
F
(terminal)
t
rr
Q
rr
I
rrm
E
rec
Parameter
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery energy
I
F
= 50 A, V
R
= 300 V,
V
GE
= ±15 V, di
F
/dt = 2320 A/μs
I
F
= 50 A
I
F
= 50 A, T
J
= 150 ˚C
Test conditions
Min.
-
-
-
-
-
-
Typ.
1.85
1.65
155
2.32
41
0.53
Max.
2.65
Unit
V
ns
µC
A
mJ
DS12341
-
Rev 3
page 3/18
A2C50S65M2-F
Brake stage
Symbol
t
rr
Q
rr
I
rrm
E
rec
R
THj-c
R
THc-h
Parameter
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery energy
Thermal resistance junction-to-
case
Thermal resistance case-to-
heatsink
Test conditions
I
F
= 50 A, V
R
= 300 V,
V
GE
= ±15 V, di
F
/dt = 2010 A/μs,
T
J
= 150 °C
Min.
-
-
-
-
Typ.
270
5.98
62
1.6
1.0
0.9
Max.
Unit
ns
µC
A
mJ
Each diode
Each diode, λ
grease
= 1 W/(m·°C)
-
-
1.1
°C/W
°C/W
1.2
Brake stage
Limiting values at T
J
= 25 °C, unless otherwise specified.
1.2.1
IGBT
Table 5.
Absolute maximum ratings of the IGBT, brake stage
Symbol
V
CES
I
C
I
CP
(1)
V
GE
P
TOT
T
JMAX
T
Jop
Parameter
Collector-emitter voltage (V
GE
= 0)
Continuous collector current (T
C
= 100 °C)
Pulsed collector current (t
p
= 1 ms)
Gate-emitter voltage
Total power dissipation of each IGBT (T
C
= 25 °C, T
J
= 175 °C)
Maximum junction temperature
Operating junction temperature range under switching conditions
Value
650
50
100
±20
208
175
-40 to 150
Unit
V
A
A
V
W
°C
°C
1. Pulse width limited by maximum junction temperature
Table 6.
Electrical characteristics of the IGBT, brake stage
Symbol
V
(BR)CES
Parameter
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Gate threshold voltage
Collector cut-off current
Gate-emitter leakage current
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
V
CC
= 520 V, I
C
= 50 A,
V
GE
= ±15 V
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0 V
Test conditions
I
C
= 1 mA, V
GE
= 0 V
V
GE
= 15 V, I
C
= 50 A
V
GE
= 15 V, I
C
= 50 A,
T
J
= 150 ˚C
V
CE
= V
GE
, I
C
= 1mA
V
GE
= 0 V, V
CE
= 650 V
V
CE
= 0 V, V
GE
= ±20 V
4150
170
80
150
5
Min.
650
1.95
2.3
6
7
100
± 500
V
Typ.
Max.
Unit
V
V
CE(sat)
(terminal)
V
GE(th)
I
CES
I
GES
C
ies
C
oes
C
res
Q
g
V
µA
nA
pF
pF
pF
nC
DS12341
-
Rev 3
page 4/18
A2C50S65M2-F
Brake stage
Symbol
t
d(on)
t
r
E
on
(1)
t
d(off)
t
f
E
off
(2)
t
d(on)
t
r
E
on
(1)
t
d(off)
t
f
E
off
(2)
t
SC
R
THj-c
R
THc-h
Parameter
Turn-on delay time
Current rise time
Turn-on switching energy
Turn-off delay time
Current fall time
Turn-off switching energy
Turn-on delay time
Current rise time
Turn-on switching energy
Turn-off delay time
Current fall time
Turn-off switching energy
Short-circuit withstand time
Thermal resistance junction-to -
case
Thermal resistance case-to-
heatsink
Test conditions
V
CC
= 300 V, I
C
= 50 A,
R
G
= 6.8 Ω, V
GE
= ±15 V,
di/dt = 2320 A/µs
V
CC
= 300 V, I
C
= 50 A,
R
G
= 6.8 Ω, V
GE
= ±15 V,
dv/dt = 7400 V/µs
V
CC
= 300 V, I
C
= 50 A,
R
G
= 6.8 Ω, V
GE
= ±15 V,
di/dt = 2010 A/µs, T
J
= 150 °C
V
CC
= 300 V, I
C
= 50 A,
R
G
= 6.8 Ω, V
GE
= ±15 V,
dv/dt = 6000 V/µs, T
J
= 150 °C
V
CC
≤ 360 V, V
GE
≤ 15 V,
T
Jstart
≤ 150 °C
Each IGBT
Each IGBT, λ
grease
= 1 W/(m·°C)
Min.
Typ.
147
17.5
0.147
105
133
1.36
147
20
0.318
104
194
1.82
Max.
Unit
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
ns
ns
mJ
µs
6
0.65
0.79
0.72
°C/W
°C/W
1. Including the reverse recovery of the diode
2. Including the tail of the collector current
1.2.2
Diode
Table 7.
Absolute maximum ratings of the diode, brake stage
Symbol
V
RRM
I
F
I
FP
(1)
T
JMAX
T
Jop
Parameter
Repetitive peak reverse voltage
Continuous forward current (T
C
= 100 °C)
Pulsed forward current (t
p
= 1 ms)
Maximum junction temperature
Operating junction temperature range under switching conditions
Value
650
50
100
175
-40 to 150
Unit
V
A
A
°C
°C
1. Pulse width limited by maximum junction temperature.
Table 8.
Electrical characteristics of the diode, brake stage
Symbol
V
F
(terminal)
t
rr
Q
rr
I
rrm
E
rec
Parameter
Forward voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery energy
I
F
= 50 A, V
R
= 300 V,
V
GE
= ±15 V, di/dt = 2320 A/μs
I
F
= 50 A
I
F
= 50 A, T
J
= 150 ˚C
Test conditions
Min.
-
-
-
-
-
-
Typ.
1.85
1.65
155
2.32
41
0.53
Max.
Unit
V
ns
µC
A
mJ
DS12341
-
Rev 3
page 5/18
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