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S25FL256LDPMFN001

Description
NOR FlashNor
Categorysemiconductor    Memory IC    NOR flash memory   
File Size1MB,161 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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S25FL256LDPMFN001 Overview

NOR FlashNor

S25FL256LDPMFN001 Parametric

Parameter NameAttribute value
MakerCypress Semiconductor
Product CategoryNOR flash memory
Installation styleSMD/SMT
Package/boxSOIC-16
seriesS25FL256L
EncapsulationTube
storage typeNOR
Factory packaging quantity47
S25FL256L/S25FL128L
256-Mb (32-MB)/128-Mb (16-MB),
3.0 V FL-L Flash Memory
General Description
The Cypress FL-L Family devices are Flash non-volatile memory products using:
Floating Gate technology
65 nm process lithography
The FL-L family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output
(Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit wide Quad I/O (QIO) and Quad Peripheral
Interface (QPI) commands. In addition, there are Double Data Rate (DDR) read commands for QIO and QPI that transfer address
and read data on both edges of the clock.
The architecture features a Page Programming Buffer that allows up to 256-bytes to be programmed in one operation and provides
individual 4KB sector, 32KB half block, 64KB block, or entire chip erase.
By using FL-L family devices at the higher clock rates supported, with Quad commands, the instruction read transfer rate can match
or exceed traditional parallel interface, asynchronous, NOR Flash memories, while reducing signal count dramatically.
The FL-L family products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or
embedded applications. Provides an ideal storage solution for systems with limited space, signal connections, and power. These
memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM,
executing code directly (XIP), and storing re-programmable data.
Features
Serial Peripheral Interface (SPI) with Multi-I/O
Clock polarity and phase modes 0 and 3
Double Data Rate (DDR) option
Quad peripheral Interface (QPI) option
Extended Addressing: 24- or 32-bit address options
Serial Command subset and footprint compatible with
S25FL-A, S25FL1-K, S25FL-P, S25FL-S and S25FS-S SPI
families
Multi I/O Command subset and footprint compatible with
S25FL-P, S25FL-S and S25FS-S SPI families
Read
Commands: Normal, Fast, Dual I/O, Quad I/O, DualO,
QuadO, DDR Quad I/O.
Modes: Burst Wrap, Continuous (XIP), QPI
Serial Flash Discoverable Parameters (SFDP) for configura-
tion information.
Program Architecture
256 Bytes Page Programming buffer
3.0 V FL-L Flash Memory
Program suspend and resume
Erase Architecture
Uniform 4 KB Sector Erase
Uniform 32 KB Half Block Erase
Uniform 64 KB Block Erase
Chip erase
Erase suspend and resume
100,000 Program/Erase Cycles, minimum
20 Year Data Retention, minimum
Security features
Status and Configuration Register Protection
Four Security Regions of 256 bytes each outside the main
Flash array
Legacy Block Protection: Block range
Individual and Region Protection
• Individual Block Lock: Volatile individual Sector/Block
• Pointer Region: Non-Volatile Sector/Block range
• Power Supply Lock-down, Password, or Permanent pro-
tection of Security Regions 2 and 3 and Pointer Region
Technology
65 nm Floating Gate Technology
Single Supply Voltage with CMOS I/O
2.7 V to 3.6 V
Temperature Range / Grade
Industrial (–40 °C to +85 °C)
Industrial Plus (–40 °C to +105 °C)
Automotive, AEC-Q100 Grade 3 (–40 °C to +85 °C)
Automotive, AEC-Q100 Grade 2 (–40 °C to +105 °C)
Automotive, AEC-Q100 Grade 1 (–40 °C to +125 °C)
Packages (all Pb-free)
8-pin SOIC 208 mil (SOC008) — S25FL128L only
WSON 5
6 mm (WND008) — S25FL128L only
WSON 6
8 mm (WNG008) — S25FL256L only
16-pin SOIC 300 mil (SO3016)
BGA-24 6
8 mm
• 5
5 ball (FAB024) footprint
• 4
6 ball (FAC024) footprint
Cypress Semiconductor Corporation
Document Number: 002-00124 Rev. *H
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised July 11, 2018
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