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S25FL256SDPBHB213

Description
NOR FlashNor
Categorysemiconductor    Memory IC    NOR flash memory   
File Size5MB,155 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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S25FL256SDPBHB213 Overview

NOR FlashNor

S25FL256SDPBHB213 Parametric

Parameter NameAttribute value
MakerCypress Semiconductor
Product CategoryNOR flash memory
Installation styleSMD/SMT
Package/boxBGA-24
seriesS25FL256S
storage256 Mbit
maximum clock frequency66 MHz
Interface TypeSPI
organize32 M x 8
Timing typeAsynchronous
Data bus width8 bit
Supply voltage - min.2.7 V
Supply voltage - max.3.6 V
Supply current—max.100 mA
Minimum operating temperature- 40 C
Maximum operating temperature+ 105 C
EncapsulationReel
storage typeNOR
speed66 MHz
structureMirrorBit Eclipse
Factory packaging quantity2500
S25FL128S/S25FL256S
128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte)
3.0V SPI Flash Memory
Features
CMOS 3.0 Volt Core with Versatile I/O
Serial Peripheral Interface (SPI) with Multi-I/O
– SPI Clock polarity and phase modes 0 and 3
– Double Data Rate (DDR) option
– Extended Addressing: 24- or 32-bit address options
– Serial Command set and footprint compatible with
S25FL-A, S25FL-K, and S25FL-P SPI families
– Multi I/O Command set and footprint compatible with
S25FL-P SPI family
READ Commands
– Normal, Fast, Dual, Quad, Fast DDR, Dual DDR, Quad
DDR
– AutoBoot - power up or reset and execute a Normal or
Quad read command automatically at a preselected
address
– Common Flash Interface (CFI) data for configuration
information.
Programming (1.5 Mbytes/s)
– 256 or 512 Byte Page Programming buffer options
– Quad-Input Page Programming (QPP) for slow clock
systems
– Automatic ECC -internal hardware Error Correction Code
generation with single bit error correction
Erase (0.5 to 0.65 Mbytes/s)
– Hybrid sector size option - physical set of thirty two 4-kbyte
sectors at top or bottom of address space with all
remaining sectors of 64 kbytes, for compatibility with prior
generation S25FL devices
– Uniform sector option - always erase 256-kbyte blocks for
software compatibility with higher density and future
devices.
Cycling Endurance
– 100,000 Program-Erase Cycles, minimum
Data Retention
– 20 Year Data Retention, minimum
Security features
– One Time Program (OTP) array of 1024 bytes
– Block Protection:
– Status Register bits to control protection against
program or erase of a contiguous range of sectors.
– Hardware and software control options
– Advanced Sector Protection (ASP)
– Individual sector protection controlled by boot code or
password
Cypress
®
65 nm MirrorBit
®
Technology with Eclipse
Architecture
Core Supply Voltage: 2.7V to 3.6V
I/O Supply Voltage: 1.65V to 3.6V
– SO16 and FBGA packages
Temperature Range / Grade:
– Industrial (-40°C to +85°C)
– Industrial Plus (-40°C to +105°C)
– Automotive AEC-Q100 Grade 3 (-40°C to +85°C)
– Automotive AEC-Q100 Grade 2 (-40°C to +105°C)
– Automotive AEC-Q100 Grade 1 (-40°C to +125°C)
Packages (all Pb-free)
– 16-lead SOIC (300 mil)
– WSON 6 x 8 mm
– BGA-24 6 x 8 mm
– 5 x 5 ball (FAB024) and 4 x 6 ball (FAC024) footprint
options
– Known Good Die and Known Tested Die
Logic Block Diagram
CS#
SCK
SI/IO0
SO/IO1
I/O
WP#/IO2
HOLD#/IO3
RESET#
Data Path
Control
Logic
X Decoders
SRAM
MirrorBit Array
Y Decoders
Data Latch
Cypress Semiconductor Corporation
Document Number: 001-98283 Rev. *O
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised March 21, 2018
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