RFAM3620
®
CATV Edge QAM MCM 1218MHz 36dB
Product Description
The RFAM3620 is an Integrated Edge QAM Amplifier
Module. The part employs GaAs pHEMT die, GaAs
MESFET die, a 20 dB range variable attenuator and a
power enable feature, has high output capability, and is
operated from 45 MHz to 1218 MHz. It provides excellent
linearity and superior return loss performance with low
noise and optimal reliability.
21 pin, 11.0 mm x 11.0 mm x 1.375 mm package
Product Features
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Excellent Linearity
Extremely High Output Capability
Voltage Controlled Attenuator
Power Enable Feature
Extremely Low Distortion
Optimal Reliability
Low Noise
Unconditionally Stable Under all Terminations
36 dB Min Gain at 1218 MHz
510 mA Typical at 12 VDC
Temperature sensing feature
Functional Block Diagram
Power Enable
V+
INPUT
OUTPUT
Preamp
Driver
▪
▪
Att. adjust
Current
Setting
Temperature
Sensing
Applications
•
Head End Equipment
•
45 – 1218 MHz Downstream Edge QAM RF Modulators
Ordering Information
Part No.
RFAM3620SB
RFAM3620SQ
RFAM3620SR
RFAM3620TR7
RFAM3620TR13
RFAM3620PCBA-410
Description
Sample bag 5 pcs
Sample bag 25 pcs
7” Reel with 100 pcs
7” Reel with 250 pcs
13” Reel with 750 pcs
Fully assembled Evaluation Board
Data Sheet Rev.G, February 22, 2019 | Subject to change without notice
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RFAM3620
®
Absolute Maximum Ratings
Parameter
DC Supply over-voltage (5 minutes)
Storage Temperature
Operating Mounting Base Temperature
Moisture Sensitivity Level
IPC/JEDEC J-STD-20
Value / Range
+14 V
−40 to 100 °C
−30 to 110 °C
MSL 3 @ 260 °C
Operation of this device outside the parameter ranges given above may
cause permanent damage.
Electrical Specifications – part 1
Parameter
Operational Frequency Range
Current (I
DD
)
Gain
Gain
Gain Slope
Gain Flatness
Input Return Loss
Conditions
(V+=12V, TMB=30°C, ZS=ZL=75 ATT=0dB)
–
–
f
o
= 45 MHz
f
o
= 1218 MHz
45 to 1218 MHz
45 to 1218 MHz
f
o
= 45 to 160 MHz
f
o
= 160 to 1003 MHz
f
o
= 1003 to 1218 MHz
f
o
= 45 to 160 MHz
[1]
Min
45
Typ
–
510
35.5
Max
1218
550
38.0
2.5
1.0
–
–
–
–
–
–
Units
MHz
mA
36.0
0.5
18
15
15
18
15
15
–
0 - 20
37.0
1.0
0.5
dB
dB
Output Return Loss
Noise Figure
Attenuator Range
Power Enable/Disable
Power Enable/Disable
Thermal Resistance
f
o
= 160 to 1003 MHz
f
o
= 1003 to 1218 MHz
f
o
= 50 to 1218 MHz
Attenuator Voltage 0V to 12V
Logic high (3.3V) applied to power enable pin
[2]
Logic low (0V) applied to power enable pin
[3]
Junction to Mounting Base
dB
dB
dB
3.0
Amp
enabled
Amp
disabled
6.5
5.0
K/W
Data Sheet Rev.G, February 22, 2019 | Subject to change without notice
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RFAM3620
®
Electrical Specifications – part 2
Parameter
Conditions
(V+=12V, TMB=30°C, ZS=ZL=75 ATT=0dB)
Min
Typ
Max
-58
Units
dBc
Adjacent Channel Power Ratio
Channel Power = 58 dBmV;
(ACPR); N=4 contiguous 256QAM Adjacent channel up to 750 kHz from channel block
channels
edge, f= 50 to 1000 MHz
Channel Power = 58 dBmV;
Adjacent channel (750 kHz from channel block edge to
6 MHz from channel block edge), f= 50 to 1000 MHz
Channel Power = 58 dBmV;
Next-adjacent channel (6 MHz from channel block edge
to 12 MHz from channel block edge), f= 50 to 1000 MHz
Channel Power = 58 dBmV;
Third-adjacent channel (12 MHz from channel block edge
to 18 MHz from channel block edge), f= 50 to 1000 MHz
2
nd
Order Harmonic (HD2);
N=1 256QAM channel
3
rd
Order Harmonic (HD3);
N=1 256QAM channel
CTB
XMOD
CSO
CIN
1.
2.
3.
4.
-60
dBc
-63
dBc
-65
dBc
Channel Power = 66 dBmV;
In each of 2N contiguous 6 MHz channels coinciding with
2nd harmonic components (up to 1000MHz)
Channel Power = 66 dBmV;
In each of 3N contiguous 6 MHz channels coinciding with
3rd harmonic components (up to 1000MHz)
-73
Vo=48 dBmV, flat, 79 analog channels
plus 75 digital channels (-6dB offset)
[4]
-70
-75
64
-63
dBc
-63
dBc
dBc
dBc
dBc
dB
The slope is defined as the difference between the gain at the start frequency and the gain at the stop frequency.
Logic high is defined as power enable voltage >2V
Logic low is defined as power enable voltage <0.4V
79 analog channels, NTSC frequency raster: 55.25MHz to 547.25MHz, +48dBmV flat output level, plus 75 digital channels, -6dB offset relative
to the equivalent analog carrier.
Composite Second Order (CSO) - The CSO parameter (both sum and difference products) is defined by ANSI/SCTE 6. Composite Triple Beat
(CTB) The CTB parameter is defined by ANSI/SCTE 6. Cross Modulation (XMOD) - Cross modulation (XMOD) is measured at baseband
(selective voltmeter method), referenced to 100% modulation of the carrier being tested. Carrier to Intermodulation Noise (CIN) - The CIN
parameter is defined by ANSI/SCTE 17 (Test procedure for carrier to noise).
Data Sheet Rev.G, February 22, 2019 | Subject to change without notice
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RFAM3620
®
Evaluation Board Assembly Drawing
Note:
The ground plane of the RFAM3620 module should be soldered onto a board equipped with as many thermal vias as possible. Underneath
this thermal via array a heat sink with thermal grease needs to be placed which is able to dissipate the complete module DC power. In any
case the module backside temperature should not exceed 100°C
Evaluation Board Schematic
FB1
Bead 60Ω
V+
R1
5.1kΩ
D3
PTVS13VS1UR
C3
4.7nF
D2
MM3Z5V6T1
Power
Enable
C8
4.7nF
21
20
19
18
17
16
Att.
Adjust
NC
NC
NC
NC
NC
1
Power
NC
C13
DNI
C9
4.7nF
enable
2
V1 +
V2 +
15
14
C15
DNI
C17
0.3pF
C4
4.7nF
Att. Adjust
GND
T1
RFXF0006
3
T2
RFXF0008
2
C2
4.7nF
RF INPUT
3
RF In+
U1
RFAM3620
RF Out+
DC Out
13
12
11
3
2
3
T3
RFXF0009
2
4
C5
4.7nF
C6
4.7nF
4
1
4
4
5
1
RF OUTPUT
RF In-
RF Out-
1
C10
DNI
C1
DNI
GND
D1
TQP200002
25V
C16
DNI
NC
NC
NC
NC
back
side
5
6
7
8
9
NC
Rt
C18
0.3pF
D4
TQP200002
25V
C7
DNI
C11
DNI
10
R2
3.3kΩ
Vt
C12
4.7nF
C14
DNI
Data Sheet Rev.G, February 22, 2019 | Subject to change without notice
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RFAM3620
®
Evaluation Board Bill of Materials (BOM)
Reference Des.
PCB
Value
Rev B
Description
PCB RFAM3620 – EVB 842B
optional to improve matching in application
CAP, 0402, 10%, 50V, X7R
optional blocking CAP
CAP, 0402, ±0.1pF, 50V, C0G
RES, 0402, 1%, TK100
RES, 0402, 1%, TK100
Impedance Bead, 0603, 60Ω @ 100MHz,
LM, DCR 0.10 Ω, 800mA
ESD Protection Diode TQP200002,
TSLP3
Zener Diode MM3Z5V6T1G, SOD-323
Diode, TVS, PTVS13VS1UR, SOD123W
RFXF0006
RFXF0008
RFXF0009
Manuf.
Qorvo
Part Number
C1, C7, C10, C11, C15, C16
DNI
C2, C3, C4, C5, C6, C8, C9,
4.7 nF
C12
C13, C14
C17, C18
DNI
0.3 pF
2.7 kΩ
3.3 kΩ
60 Ω
25 V
5.6 V
13 V
R1
R2
FB1
D1, D4
D2
D3
T1
T2
T3
U1
Notes:
TaiyoYuden
BK 1608 HS 600
Qorvo/ Unisem TQP200002
ON Semi
NXP
Qorvo
Qorvo
Qorvo
Qorvo
MM3Z5V6T1G
PTVS13VS1UR
DUT
RFAM3620
Data Sheet Rev.G, February 22, 2019 | Subject to change without notice
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