RMLV1616A Series
16Mb Advanced LPSRAM (1M word × 16bit / 2M word x 8bit)
R10DS0258EJ0100
Rev.1.00
2016.01.06
Description
The RMLV1616A Series is a family of 16-Mbit static RAMs organized 1,048,576-word × 16-bit, fabricated by
Renesas’s high-performance Advanced LPSRAM technologies. The RMLV1616A Series has realized higher density,
higher performance and low power consumption. The RMLV1616A Series offers low power standby power dissipation;
therefore, it is suitable for battery backup systems. It is offered in 48pin TSOP (I), 52pin
TSOP
(II) or 48-ball fine
pitch ball grid array.
Features
Single 3V supply: 2.7V to 3.6V
Access time: 55ns (max.)
Current consumption:
──
Standby: 0.5µA (typ.)
Common data input and output
──
Three state output
Directly TTL compatible
──
All inputs and outputs
Battery backup operation
Part Name Information
Part Name
Access time
Temperature
Range
Package
RMLV1616AGSA-5S2
12mm x 20mm 48pin plastic TSOP (I)
RMLV1616AGSD-5S2
55 ns
-40 ~ +85°C
10.79mm × 10.49mm 52pin plastic µTSOP (II)
RMLV1616AGBG-5S2
48-ball FBGA with 0.75mm ball pitch
R10DS0258EJ0100 Rev.1.00
2016.01.06
Page 1 of 14
RMLV1616A Series
Pin Arrangement
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE#
CS2
NC
UB#
LB#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
A16
BYTE#
Vss
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
Vcc
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
Vss
CS1#
A0
48pin TSOP (I)
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A15
A14
A13
A12
A11
A10
A9
A8
A19
CS1#
WE#
NC
NC
Vcc
CS2
NC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
52
51
50
49
48
47
46
45
44
43
42
41
A16
BYTE#
UB#
Vss
LB#
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
NC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
Vss
NC
A0
1
A
B
C
D
E
F
G
H
LB#
DQ15
2
OE#
UB#
3
A0
A3
A5
A17
NC
A14
A12
A9
4
A1
A4
A6
A7
A16
A15
A13
A10
5
A2
CS1#
DQ1
DQ3
DQ4
DQ6
WE#
A11
6
CS2
DQ0
DQ2
Vcc
Vss
DQ5
DQ7
NC
DQ13 DQ14
Vss
Vcc
DQ10
DQ8
A18
DQ12
DQ11
DQ9
A19
A8
52pin
TSOP
(II)
40
39
38
37
36
35
34
33
32
31
30
29
28
27
48-ball FBGA (TOP VIEW)
R10DS0258EJ0100 Rev.1.00
2016.01.06
Page 2 of 14
RMLV1616A Series
Pin Description
Pin name
V
CC
V
SS
A0 to A19
A-1 to A19
DQ0 to DQ15
CS1#
CS2
OE#
WE#
LB#
UB#
BYTE#
NC
Power supply
Ground
Address input (word mode)
Address input (byte mode)
Data input/output
Chip select 1
Chip select 2
Output enable
Write enable
Lower byte select
Upper byte select
Byte control mode enable
No connection
Function
Block Diagram
SENSE Amp.
DQ0
DATA SELECTOR
OUTPUT
BUFFER
ADDRESS BUFFER
A0
Memory Array
DECODER
SENSE Amp.
A19
CS2
CS1#
LB#
UB#
BYTE#
WE#
OE#
OUTPUT
BUFFER
1048576 Words
x 16BITS
OR
2097152 Words
x 8BITS
CLOCK
GENERATOR
DQ7
DQ8
DQ15
/ A-1
DATA SELECTOR
DATA INPUT
BUFFER
Vcc
Vss
Note 1.
BYTE# pin supported by only 48pin TSOP (I) and 52pin µTSOP (II) types.
R10DS0258EJ0100 Rev.1.00
2016.01.06
DATA INPUT
BUFFER
x8/x16
SWITCHING
CIRCUIT
Page 3 of 14
RMLV1616A Series
Operation Table
CS1#
H
X
X
L
L
L
L
L
L
L
L
L
L
L
L
Note 2.
3.
CS2
X
L
X
H
H
H
H
H
H
H
H
H
H
H
H
BYTE#
X
X
H
H
H
H
H
H
H
H
H
H
L
L
L
UB#
X
X
H
H
H
H
L
L
L
L
L
L
X
X
X
LB#
X
X
H
L
L
L
H
H
H
L
L
L
X
X
X
WE#
X
X
X
L
H
H
L
H
H
L
H
H
L
H
H
OE#
X
X
X
X
L
H
X
L
H
X
L
H
X
L
H
DQ0~7
High-Z
High-Z
High-Z
Din
Dout
High-Z
High-Z
High-Z
High-Z
Din
Dout
High-Z
Din
Dout
High-Z
DQ8~14
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Din
Dout
High-Z
Din
Dout
High-Z
High-Z
High-Z
High-Z
DQ15
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
Din
Dout
High-Z
Din
Dout
High-Z
A-1
A-1
A-1
Operation
Stand-by
Stand-by
Stand-by
Write in lower byte
Read in lower byte
Output disable
Write in upper byte
Read in upper byte
Output disable
Word write
Word read
Output disable
Byte write
Byte read
Output disable
H: V
IH
L:V
IL
X: V
IH
or V
IL
BYTE# pin supported by only 48pin TSOP (I) and 52pin µTSOP (II) types.
48-ball FBGA type equals BYTE#=H mode.
Absolute Maximum Ratings
Parameter
Symbol
Power supply voltage relative to V
SS
V
CC
Terminal voltage on any pin relative to V
SS
V
T
Power dissipation
P
T
Operation temperature
Topr
Storage temperature range
Tstg
Storage temperature range under bias
Tbias
Note 4. -2.0V for pulse
≤
30ns (full width at half maximum)
5. Maximum voltage is +4.6V.
Value
-0.5 to +4.6
-0.5
*4
to V
CC
+0.3
*5
0.7
-40 to +85
-65 to +150
-40 to +85
unit
V
V
W
°C
°C
°C
DC Operating Conditions
Parameter
Supply voltage
Symbol
V
CC
V
SS
Input high voltage
Input low voltage
Ambient temperature range
Note 6.
V
IH
V
IL
Ta
Min.
2.7
0
2.2
-0.3
-40
Typ.
3.0
0
─
─
─
Max.
3.6
0
V
CC
+0.3
0.6
+85
Unit
V
V
V
V
°C
6
Note
-2.0V for pulse
≤
30ns (full width at half maximum)
R10DS0258EJ0100 Rev.1.00
2016.01.06
Page 4 of 14
RMLV1616A Series
DC Characteristics
Parameter
Input leakage current
Output leakage current
Symbol
| I
LI
|
| I
LO
|
Average operating current
Min.
─
─
Typ.
─
─
Max.
1
1
Unit
A
A
Test conditions
*7
Vin = V
SS
to V
CC
CS1# = V
IH
or CS2 = V
IL
or OE# = V
IH
or WE# = V
IL
or LB# = UB# = V
IH
,
V
I/O
= V
SS
to V
CC
Cycle = 55ns, duty =100%, I
I/O
= 0mA,
CS1# = V
IL
, CS2 = V
IH
, Others = V
IH
/V
IL
Cycle = 1s, duty =100%, I
I/O
= 0mA,
CS1#
≤
0.2V, CS2
≥
V
CC
-0.2V,
V
IH
≥
V
CC
-0.2V, V
IL
≤
0.2V
CS2 = V
IL
, Others = V
SS
to V
CC
~+25°C
~+40°C
~+70°C
~+85°C
Vin = V
SS
to V
CC,
(1) CS2
≤
0.2V or
(2) CS1#
≥
V
CC
-0.2V,
CS2
≥
V
CC
-0.2V or
(3) LB# = UB#
≥
V
CC
-0.2V,
CS1#
≤
0.2V,
CS2
≥
V
CC
-0.2V
I
CC1
─
23
*8
30
mA
I
CC2
Standby current
Standby current
I
SB
─
─
─
─
1.6
─
0.5
*8
4
0.3
mA
mA
A
A
A
A
V
V
V
V
*8
3
5
12
16
─
─
0.4
0.2
0.8
*9
2.5
*10
5
*11
─
─
─
─
I
SB1
─
─
Output high voltage
Output low voltage
Note 7.
V
OH
V
OH2
V
OL
V
OL2
2.4
Vcc - 0.2
─
─
I
OH
= -1mA
I
OH
= -0.1mA
I
OL
= 2mA
I
OL
= 0.1mA
BYTE# pin supported by only 48pin TSOP (I) and 52pin µTSOP (II) types.
BYTE#
≥
Vcc - 0.2V or BYTE#
≤
0.2V
8. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=25ºC), and not 100% tested.
9. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=40ºC), and not 100% tested.
10. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=70ºC), and not 100% tested.
11. Typical parameter indicates the value for the center of distribution at 3.0V (Ta=85ºC), and not 100% tested.
Capacitance
(Ta =25°C, f =1MHz)
Parameter
Symbol
Min.
Input capacitance
C in
─
Input / output capacitance
C
I/O
─
Note 12. This parameter is sampled and not 100% tested.
Typ.
─
─
Max.
8
10
Unit
pF
pF
Test conditions
Vin =0V
V
I/O
=0V
Note
12
12
R10DS0258EJ0100 Rev.1.00
2016.01.06
Page 5 of 14
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