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CY15E016J-SXE

Description
F-RAM F-RAM Memory Serial
Categorysemiconductor    Memory IC    F - RAM   
File Size364KB,18 Pages
ManufacturerCypress Semiconductor
Environmental Compliance
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CY15E016J-SXE Overview

F-RAM F-RAM Memory Serial

CY15E016J-SXE Parametric

Parameter NameAttribute value
MakerCypress Semiconductor
Product CategoryF-RAM
Installation styleSMD/SMT
storage16 kbit
Interface TypeI2C
organize2 k x 8
Minimum operating temperature- 40 C
Maximum operating temperature+ 85 C
seriesCY15E016J
EncapsulationTube
humidity sensitivityYes
Working power voltage5 V
Factory packaging quantity485
CY15E016J
16-Kbit (2K × 8) Serial (I
2
C) Automotive-A
F-RAM
16-Kbit (2K × 8) Serial (I
2
C) Automotive-A F-RAM
Features
Functional Description
The CY15E016J is a 16-Kbit nonvolatile memory employing an
advanced ferroelectric process. A ferroelectric random access
memory or F-RAM is nonvolatile and performs reads and writes
similar to a RAM. It provides reliable data retention for 151 years
while eliminating the complexities, overhead, and system-level
reliability problems caused by EEPROM and other nonvolatile
memories.
Unlike EEPROM, the CY15E016J performs write operations at
bus speed. No write delays are incurred. Data is written to the
memory array immediately after each byte is successfully
transferred to the device. The next bus cycle can commence
without the need for data polling. In addition, the product offers
substantial write endurance compared with other nonvolatile
memories. Also, F-RAM exhibits much lower power during writes
than EEPROM since write operations do not require an internally
elevated power supply voltage for write circuits. The CY15E016J
is capable of supporting 10
14
read/write cycles, or 100 million
times more write cycles than EEPROM.
These capabilities make the CY15E016J ideal for nonvolatile
memory applications, requiring frequent or rapid writes.
Examples range from data logging, where the number of write
cycles may be critical, to demanding industrial controls where the
long write time of EEPROM can cause data loss. The
combination of features allows more frequent data writing with
less overhead for the system.
The CY15E016J provides substantial benefits to users of serial
(I
2
C) EEPROM as a hardware drop-in replacement. The device
specifications are guaranteed over an automotive-a temperature
range of –40
C
to +85
C.
16-Kbit ferroelectric random access memory (F-RAM) logically
organized as 2K × 8
14
High-endurance 100 trillion (10 ) read/writes
151-year data retention (See the
Data Retention and
Endurance
table)
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I
2
C)
Up to 1-MHz frequency
2
Direct hardware replacement for serial (I C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Low power consumption
100
A
active current at 100 kHz
4
A
(typ) standby current
Voltage operation: V
DD
= 4.5 V to 5.5 V
Automotive-A temperature: –40
C
to +85
C
8-pin small outline integrated circuit (SOIC) package
Restriction of hazardous substances (RoHS) compliant
Logic Block Diagram
Counter
Address
Latch
11
2Kx8
F-RAM Array
8
SDA
Serial to Parallel
Converter
Data Latch
8
SCL
WP
Control Logic
Cypress Semiconductor Corporation
Document Number: 002-10223 Rev. *B
198 Champion Court
San Jose
,
CA 95134-1709
408-943-2600
Revised March 24, 2017

CY15E016J-SXE Related Products

CY15E016J-SXE CY15E016J-SXA
Description F-RAM F-RAM Memory Serial F-RAM F-RAM Memory Serial
Maker Cypress Semiconductor Cypress Semiconductor
Product Category F-RAM F-RAM
Installation style SMD/SMT SMD/SMT
storage 16 kbit 16 kbit
Interface Type I2C I2C
organize 2 k x 8 2 k x 8
Minimum operating temperature - 40 C - 40 C
Maximum operating temperature + 85 C + 85 C
series CY15E016J CY15E016J
Encapsulation Tube Tube
Working power voltage 5 V 5 V
Factory packaging quantity 485 485

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